The interfacial properties of Schottky contacts crucially affect the performance of power devices. While a few studies have explored the impact of fluorine on Schottky contacts, a comprehensive theoretical explanation...The interfacial properties of Schottky contacts crucially affect the performance of power devices. While a few studies have explored the impact of fluorine on Schottky contacts, a comprehensive theoretical explanation supported by experimental evidence remains lacking. This work investigates the effects of fluorine incorporation and electrothermal annealing(ETA) on the current transport process at Ni/β-Ga_(2)O_(3) Schottky contacts. X-ray photoelectron spectroscopy and first-principles calculations confirm the presence of fluorine substitutions for oxygen and oxygen vacancies and their lowering effect on the Schottky barrier heights. Additionally, accurate electrothermal hybrid TCAD simulations validates the extremely short-duration high temperatures(683 K) induced by ETA, which facilitates lattice rearrangement and reduces interface trap states. The interface trap states are quantitatively resolved through frequency-dependent conductance technique, showing the trap density(DT)reduction from(0.88-2.48) × 10^(11) cm^(-2)·eV^(-1) to(0.46-2.09) × 10^(11) cm^(-2)·eV^(-1). This investigation offers critical insights into the β-Ga_(2)O_(3) contacts with the collaborative treatment and solids the promotion of high-performance β-Ga_(2)O_(3) power devices.展开更多
A monolithic integrated full-wave bridge rectifier consisted of horizontal Schottky-barrier diodes(SBD)is prepared based on 100 nm ultra-thin β-Ga_(2)O_(3)and demonstrated the solar-blind UV(SUV)light-modulated chara...A monolithic integrated full-wave bridge rectifier consisted of horizontal Schottky-barrier diodes(SBD)is prepared based on 100 nm ultra-thin β-Ga_(2)O_(3)and demonstrated the solar-blind UV(SUV)light-modulated characteristics.Under SUV light illumination,the rectifier has the excellent full-wave rectification characteristics for the AC input signals of 5,12,and 24 V with different frequencies.Further,experimental results confirmed the feasibility of continuously tuning the rectified output through SUV light-encoding.This work provides valuable insights for the development of optically programmable Ga_(2)O_(3)ACDC converters.展开更多
The(010)orientation ofβ-Ga_(2)O_(3)is a highly promising platform for next-generation lateral power electronics due to its superior theoretical transport properties.However,progress has been impeded by the unavailabi...The(010)orientation ofβ-Ga_(2)O_(3)is a highly promising platform for next-generation lateral power electronics due to its superior theoretical transport properties.However,progress has been impeded by the unavailability of large-area substrates,limiting studies to small-scale samples.Leveraging the recent emergence of 2-inch wafers,we report the first demonstration of homoepitaxial growth on a 2-inch,Fe-doped semi-insulating(010)β-Ga_(2)O_(3)substrate by metal-organic chemical vapor deposition(MOCVD).A systematic,wafer-scale characterization reveals the successful growth of a highquality epitaxial film.High-resolution x-ray diffraction shows an excellent crystalline structure,with a rocking curve full-width ranging from 21.0 arcsec to 103.0 arcsec.Atomic force microscopy confirms an atomically smooth surface with a root-mean-square roughness below 1.53 nm,displaying a distinct step-flow growth mode across the wafer.Furthermore,mercury-probe capacitance-voltage mapping indicates a well-controlled carrier concentration of~2×10~(18)cm~(-3)with a RSD of 5.12%.This work provides the first comprehensive assessment of 2-inch(010)Ga_(2)O_(3)epitaxial wafers,validating a critical material platform for the development and future manufacturing of high-performance power devices.展开更多
With the rapid advancement of optoelectronic technology,high-performance photodetectors are increasingly in demand in fields such as environmental monitoring,optical communication,and defense systems,where ultraviolet...With the rapid advancement of optoelectronic technology,high-performance photodetectors are increasingly in demand in fields such as environmental monitoring,optical communication,and defense systems,where ultraviolet detection is critical.However,conventional semiconductor materials suffer from limited UV-visible detection capabilities owing to their narrow bandgaps and high dark currents.To address these challenges,wide-bandgap semiconductors have emerged as promising alternatives.Here,we fabricated a horizontally structured n–n heterojunction photodetector by growingβ-Ga_(2)O_(3) on Si–GaN via plasma-enhanced chemical vapor deposition.The device exhibits a self-powered photocurrent of 3.5 nA at zero bias,enabled by the photovoltaic effect of the space charge region.Under 254-nm and 365-nm illumination,it exhibits rectification behavior,achieving a responsivity of 0.475 m A/W(0 V,220??W/cm~2 at 254 nm)and 257.6 mA/W(-5 V),respectively.Notably,the photodetector demonstrates a high photocurrent-to-dark current ratio of 10~5 under-5-V bias,highlighting its potential for self-powered and high-performance UV detection applications.展开更多
β-Ga_(2)O_(3)是一种具有超宽带隙、高临界击穿场强和优异的巴利加优值的半导体材料,近年来在电力电子与深紫外光电探测等领域展现出巨大的应用潜力。金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术凭借其...β-Ga_(2)O_(3)是一种具有超宽带隙、高临界击穿场强和优异的巴利加优值的半导体材料,近年来在电力电子与深紫外光电探测等领域展现出巨大的应用潜力。金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术凭借其高生长速率、精确的膜厚控制、优异的薄膜质量和大尺寸生长等优势,成为未来β-Ga_(2)O_(3)走向产业化的潜在方法,并已被广泛应用于β-Ga_(2)O_(3)的外延生长研究。本文对几种常见晶向的β-Ga_(2)O_(3) MOCVD同质外延生长的研究成果进行了概述,并在此基础上介绍了极具潜力的β-(Al_(x)Ga_(1-x))_(2)O_(3)的MOCVD外延生长研究现状。最后,总结了基于MOCVD技术的β-Ga_(2)O_(3)同质外延生长以及β-(Al_(x)Ga_(1-x))_(2)O_(3)生长过程中面临的主要问题,并对未来的发展进行了展望。展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos. 62174019, 52302046, L2424216)the Guangdong Basic and Applied Basic Research Foundation (Grant No. 2024A1515012139)+2 种基金the Major Program (JD) of Hubei Province (Grant No. 2023BAA009)the Knowledge Innovation Program of Wuhan-Shuguang Project (Grant No. 2023010201020262)the Basic Research Program of Jiangsu (Grant No. BK20230268)。
文摘The interfacial properties of Schottky contacts crucially affect the performance of power devices. While a few studies have explored the impact of fluorine on Schottky contacts, a comprehensive theoretical explanation supported by experimental evidence remains lacking. This work investigates the effects of fluorine incorporation and electrothermal annealing(ETA) on the current transport process at Ni/β-Ga_(2)O_(3) Schottky contacts. X-ray photoelectron spectroscopy and first-principles calculations confirm the presence of fluorine substitutions for oxygen and oxygen vacancies and their lowering effect on the Schottky barrier heights. Additionally, accurate electrothermal hybrid TCAD simulations validates the extremely short-duration high temperatures(683 K) induced by ETA, which facilitates lattice rearrangement and reduces interface trap states. The interface trap states are quantitatively resolved through frequency-dependent conductance technique, showing the trap density(DT)reduction from(0.88-2.48) × 10^(11) cm^(-2)·eV^(-1) to(0.46-2.09) × 10^(11) cm^(-2)·eV^(-1). This investigation offers critical insights into the β-Ga_(2)O_(3) contacts with the collaborative treatment and solids the promotion of high-performance β-Ga_(2)O_(3) power devices.
基金supported by Natural Science Basic Research Program of Shaanxi Province of China(Grant No.2023JCYB574)National Natural Science Foundation of China(Grant No.62204203)。
文摘A monolithic integrated full-wave bridge rectifier consisted of horizontal Schottky-barrier diodes(SBD)is prepared based on 100 nm ultra-thin β-Ga_(2)O_(3)and demonstrated the solar-blind UV(SUV)light-modulated characteristics.Under SUV light illumination,the rectifier has the excellent full-wave rectification characteristics for the AC input signals of 5,12,and 24 V with different frequencies.Further,experimental results confirmed the feasibility of continuously tuning the rectified output through SUV light-encoding.This work provides valuable insights for the development of optically programmable Ga_(2)O_(3)ACDC converters.
基金supported by the National Natural Science Foundation of China(Grant Nos.U23A20358,62474170,61925110,62404214,and 62234007)the University of Science and Technology of China(USTC)Research Funds of the Double First-Class Initiative(Grant No.WK2100000055)+2 种基金the Project of the 46t hResearch Institute of CETC(Grant No.WDZC202446007)the JieBang Headed Project of Changsha City Hunan Province(Grant No.kq2301006)the Opening Project and the Key Laboratory of Nano devices and Applications in Suzhou Institute of Nano-Tech and NanoBionics of CAS。
文摘The(010)orientation ofβ-Ga_(2)O_(3)is a highly promising platform for next-generation lateral power electronics due to its superior theoretical transport properties.However,progress has been impeded by the unavailability of large-area substrates,limiting studies to small-scale samples.Leveraging the recent emergence of 2-inch wafers,we report the first demonstration of homoepitaxial growth on a 2-inch,Fe-doped semi-insulating(010)β-Ga_(2)O_(3)substrate by metal-organic chemical vapor deposition(MOCVD).A systematic,wafer-scale characterization reveals the successful growth of a highquality epitaxial film.High-resolution x-ray diffraction shows an excellent crystalline structure,with a rocking curve full-width ranging from 21.0 arcsec to 103.0 arcsec.Atomic force microscopy confirms an atomically smooth surface with a root-mean-square roughness below 1.53 nm,displaying a distinct step-flow growth mode across the wafer.Furthermore,mercury-probe capacitance-voltage mapping indicates a well-controlled carrier concentration of~2×10~(18)cm~(-3)with a RSD of 5.12%.This work provides the first comprehensive assessment of 2-inch(010)Ga_(2)O_(3)epitaxial wafers,validating a critical material platform for the development and future manufacturing of high-performance power devices.
基金Project supported by the Joints Fund of the National Natural Science Foundation of China(Grant No.U23A20349)the Young Scientists Fund of the National Natural Science Foundation of China(Grant Nos.62204126,62305171,62304113)。
文摘With the rapid advancement of optoelectronic technology,high-performance photodetectors are increasingly in demand in fields such as environmental monitoring,optical communication,and defense systems,where ultraviolet detection is critical.However,conventional semiconductor materials suffer from limited UV-visible detection capabilities owing to their narrow bandgaps and high dark currents.To address these challenges,wide-bandgap semiconductors have emerged as promising alternatives.Here,we fabricated a horizontally structured n–n heterojunction photodetector by growingβ-Ga_(2)O_(3) on Si–GaN via plasma-enhanced chemical vapor deposition.The device exhibits a self-powered photocurrent of 3.5 nA at zero bias,enabled by the photovoltaic effect of the space charge region.Under 254-nm and 365-nm illumination,it exhibits rectification behavior,achieving a responsivity of 0.475 m A/W(0 V,220??W/cm~2 at 254 nm)and 257.6 mA/W(-5 V),respectively.Notably,the photodetector demonstrates a high photocurrent-to-dark current ratio of 10~5 under-5-V bias,highlighting its potential for self-powered and high-performance UV detection applications.
文摘β-Ga_(2)O_(3)是一种具有超宽带隙、高临界击穿场强和优异的巴利加优值的半导体材料,近年来在电力电子与深紫外光电探测等领域展现出巨大的应用潜力。金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术凭借其高生长速率、精确的膜厚控制、优异的薄膜质量和大尺寸生长等优势,成为未来β-Ga_(2)O_(3)走向产业化的潜在方法,并已被广泛应用于β-Ga_(2)O_(3)的外延生长研究。本文对几种常见晶向的β-Ga_(2)O_(3) MOCVD同质外延生长的研究成果进行了概述,并在此基础上介绍了极具潜力的β-(Al_(x)Ga_(1-x))_(2)O_(3)的MOCVD外延生长研究现状。最后,总结了基于MOCVD技术的β-Ga_(2)O_(3)同质外延生长以及β-(Al_(x)Ga_(1-x))_(2)O_(3)生长过程中面临的主要问题,并对未来的发展进行了展望。
