基于DRAM的内存子系统在容量不断增大的过程中消耗了40%的能量。相变随机访问存储器PRAM(phase-change random access memory)作为潜在的替代品可以解决内存容量和能耗的问题。然而,PRAM存在写操作寿命有限和带宽较低等问题。为此提出了...基于DRAM的内存子系统在容量不断增大的过程中消耗了40%的能量。相变随机访问存储器PRAM(phase-change random access memory)作为潜在的替代品可以解决内存容量和能耗的问题。然而,PRAM存在写操作寿命有限和带宽较低等问题。为此提出了的Shift-Min-Write机制,通过减少写操作流量达到延长写操作寿命和增加写带宽的目的。实验结果证明:与传统方法相比,新方法可以增加写带宽和写寿命1倍以上,并减少大约60%的写操作,而且不会随字宽增大而有明显的退化。展开更多
An accelerated evaluation method for the SRAM cell write margin is proposed using the conventional Write Noise Margin (WNM) definition based on the “butterfly curve”. The WNM is measured under a lower word line volt...An accelerated evaluation method for the SRAM cell write margin is proposed using the conventional Write Noise Margin (WNM) definition based on the “butterfly curve”. The WNM is measured under a lower word line voltage than the power supply voltage VDD. A lower word line voltage is chosen in order to make the access transistor operate in the saturation mode over a wide range of threshold voltage variation. The final WNM at the VDD word line voltage, the Accelerated Write Noise Margin (AWNM), is obtained by shifting the measured WNM at the lower word line voltage. The WNM shift amount is determined from the measured WNM dependence on the word line voltage. As a result, the cumulative frequency of the AWNM displays a normal distribution. Together with the maximum likelihood method, a normal distribution of the AWNM drastically improves development efficiency because the write failure probability can be estimated from a small number of samples. The effectiveness of the proposed method is verified using the Monte Carlo simulation.展开更多
针对Flash写前需擦除,读写I/O开销不均衡等固有缺陷,研究面向闪存缓冲区管理,对提高基于Flash的固态硬盘(Solid State Disk,SSD)访问性能具有重要理论意义和应用价值.通过分析SSD关键技术及现有缓冲区管理算法,实现了一种适用于SSD的基...针对Flash写前需擦除,读写I/O开销不均衡等固有缺陷,研究面向闪存缓冲区管理,对提高基于Flash的固态硬盘(Solid State Disk,SSD)访问性能具有重要理论意义和应用价值.通过分析SSD关键技术及现有缓冲区管理算法,实现了一种适用于SSD的基于写数据页聚簇缓冲算法.文章中详细介绍了该算法关键技术及原理,并通过FlashSim仿真平台实现SSD写缓冲.基于仿真结果与传统缓冲算法性能比对,分析得出该缓冲算法可降低SSD随机写次数和SSD数据存储分散性,并提升SSD响应速度.展开更多
文摘基于DRAM的内存子系统在容量不断增大的过程中消耗了40%的能量。相变随机访问存储器PRAM(phase-change random access memory)作为潜在的替代品可以解决内存容量和能耗的问题。然而,PRAM存在写操作寿命有限和带宽较低等问题。为此提出了的Shift-Min-Write机制,通过减少写操作流量达到延长写操作寿命和增加写带宽的目的。实验结果证明:与传统方法相比,新方法可以增加写带宽和写寿命1倍以上,并减少大约60%的写操作,而且不会随字宽增大而有明显的退化。
文摘An accelerated evaluation method for the SRAM cell write margin is proposed using the conventional Write Noise Margin (WNM) definition based on the “butterfly curve”. The WNM is measured under a lower word line voltage than the power supply voltage VDD. A lower word line voltage is chosen in order to make the access transistor operate in the saturation mode over a wide range of threshold voltage variation. The final WNM at the VDD word line voltage, the Accelerated Write Noise Margin (AWNM), is obtained by shifting the measured WNM at the lower word line voltage. The WNM shift amount is determined from the measured WNM dependence on the word line voltage. As a result, the cumulative frequency of the AWNM displays a normal distribution. Together with the maximum likelihood method, a normal distribution of the AWNM drastically improves development efficiency because the write failure probability can be estimated from a small number of samples. The effectiveness of the proposed method is verified using the Monte Carlo simulation.
文摘针对Flash写前需擦除,读写I/O开销不均衡等固有缺陷,研究面向闪存缓冲区管理,对提高基于Flash的固态硬盘(Solid State Disk,SSD)访问性能具有重要理论意义和应用价值.通过分析SSD关键技术及现有缓冲区管理算法,实现了一种适用于SSD的基于写数据页聚簇缓冲算法.文章中详细介绍了该算法关键技术及原理,并通过FlashSim仿真平台实现SSD写缓冲.基于仿真结果与传统缓冲算法性能比对,分析得出该缓冲算法可降低SSD随机写次数和SSD数据存储分散性,并提升SSD响应速度.
