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Effect of Bonding Temperature on the Microstructures and Strengths of C/C Composite/GH3044 Alloy Joints by Partial Transient Liquid-Phase(PTLP) Bonding with Multiple Interlayers 被引量:1
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作者 Xin Zhang Xiaohong Shi +3 位作者 Jie Wang Hejun Li Kezhi Li Yancai Ren 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2014年第4期663-669,共7页
With the use of Ti/Ni/Cu/Ni multiple foils as interlayer,carbon/carbon(C/C) composite was bonded to Nibased superalloy GH3044 by partial transient liquid-phase bonding technique.The effect of bonding temperature on ... With the use of Ti/Ni/Cu/Ni multiple foils as interlayer,carbon/carbon(C/C) composite was bonded to Nibased superalloy GH3044 by partial transient liquid-phase bonding technique.The effect of bonding temperature on the microstructures and strengths of the joints was investigated.The results showed that gradient structural multiple interlayers composed of ‘‘C–Ti reaction layer/Ti–Ni intermetallic compound layer/Ni–Cu sosoloid/residual Cu layer/Ni-GH3044 diffusion layer'' were formed between C/C composite and GH3044.The shear strength of the C/C composite/GH3044 joint reached the highest value of 26.1 MPa when the bonding temperature was 1,030 °C.In addition,the fracture morphology showed that the fracture mode changed with the increase of bonding temperature. 展开更多
关键词 partial transient liquid-phase bonding C/C composite Ni-based superalloy Microstructure Joint shear strength
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Interfacial reactions and diffusion path in partial transient liquid-phase bonding of Si_3N_4/Ti/Ni/Ti/Si_3N_4 被引量:1
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作者 陈铮 赵其章 +3 位作者 方芳 楼宏青 睦润舟 李志章 《中国有色金属学会会刊:英文版》 CSCD 1999年第4期831-837,共7页
The interfacial reactions in partial transient liquid-phase bonding of Si3N4 ceramics with Ti/Ni/Ti interlayers were studied by means of scanning electron microscopy (SEM), energy dispersive spectrometry (EDS) and... The interfacial reactions in partial transient liquid-phase bonding of Si3N4 ceramics with Ti/Ni/Ti interlayers were studied by means of scanning electron microscopy (SEM), energy dispersive spectrometry (EDS) and X-ray diffractometry (XRD). It was shown that the interfacial structure of Si3N4/TiN/Ti5Si3+Ti5Si4 + Ni3Si/ (NiTi ) /Ni3Ti/ Ni was formed after bonding. The activation energies for TiN layer and the mixed reaction layer of Ti5Si3 + Ti5Si4 + Ni3Si are 546. 8 kJ/mol and 543. 9 kJ/mol, respectively. The formation and transition processes of interface layer sequence in the joint were clarified by diffusion path. An important characteristic, which is different from the conventional brazing and soid-state diffusion bonding, has been found, i. e., during the partial transient liquid-phase bonding, not only the reaction layers which have formed grow, but also the diffusion path in the subsequent reaction changes because of the remarkable variation of the concentration on the metal side. 展开更多
关键词 CERAMIC joining transient liquid-phase BONDING INTERFACIAL REACTIONS diffusion
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Transient liquid-phase bonding of superalloy K465 using a Ni-Cr-Fe-B-Si amorphous interlayer alloy 被引量:2
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作者 Ji-De Liu Bo Li +3 位作者 Yuan Sun Tao Jin Xiao-Feng Sun Zhuang-Qi Hu 《Rare Metals》 SCIE EI CAS CSCD 2020年第4期408-412,共5页
A kind of Ni-Cr-Fe-B-Si system amorphous alloy was used as interlayer in transient liquid-phase bonding(TLP bonding)of polycrystalline superalloy K465.The bonding behavior,microstructure feature and the tensile proper... A kind of Ni-Cr-Fe-B-Si system amorphous alloy was used as interlayer in transient liquid-phase bonding(TLP bonding)of polycrystalline superalloy K465.The bonding behavior,microstructure feature and the tensile properties of the joints were investigated.There are B-rich phase and Si-rich phase formed in the center of the seam after bonding at 1210℃for 30 min.The isothermal solidification is complete after bonding at 1210℃for 4 h.The relationship of the average width of the remnant eutectic zone and bonding time at 1210℃is nonlinear.The tensile strength of the bonded joint at room temperature and 900℃is comparable to that of K465 alloy. 展开更多
关键词 Interlayer alloy transient liquid-phase bonding SUPERALLOY K465 Alloy
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Microstructural developments and precipitate transformation during transient liquid-phase bonding of a duplex stainless steel
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作者 袁新建 KANG Chung-Yun 《Journal of Central South University》 SCIE EI CAS 2013年第1期15-23,共9页
Effect of holding time on microstructural developments and transformation of precipitates formed at the interface during transient liquid-phase bonding of a duplex stainless steel using a Ni-based amorphous insert all... Effect of holding time on microstructural developments and transformation of precipitates formed at the interface during transient liquid-phase bonding of a duplex stainless steel using a Ni-based amorphous insert alloy was studied. The experimental results reveal that the microstructure of the adjacent base metal varies clearly as a function of holding time. The migration of Cr and Ni elements and the → transformation seem to play relevant roles in this microstructure evolution. The scanning electron microscopy (SEM) and electron prob X-ray microanalysis (EPMA) results indicate the transformation of BN→BN and (N, Mo) boride→BN at the interface with the holding time of 60-1 800 s. N content changes with holding time increasing at locations at the interface might be a controlling factor contributing to this transformation. 展开更多
关键词 transient liquid-phase bonding duplex stainless steel microstructural development precipitate transformation
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Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET 被引量:7
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作者 毕津顺 曾传滨 +3 位作者 高林春 刘刚 罗家俊 韩郑生 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第8期631-635,共5页
In this paper, we investigate the single event transient (SET) occurring in partially depleted silicon-on-insulator (PDSOI) metal-oxide-semiconductor (MOS) devices irradiated by pulsed laser beams. Transient sig... In this paper, we investigate the single event transient (SET) occurring in partially depleted silicon-on-insulator (PDSOI) metal-oxide-semiconductor (MOS) devices irradiated by pulsed laser beams. Transient signal characteristics of a 0.18-p.m single MOS device, such as SET pulse width, pulse maximum, and collected charge, are measured and an- alyzed at wafer level. We analyze in detail the influences of supply voltage and pulse energy on the SET characteristics of the device under test (DUT). The dependences of SET characteristics on drain-induced barrier lowering (DIBL) and the parasitic bipolar junction transistor (PBJT) are also discussed. These results provide a guide for radiation-hardened deep sub-micrometer PDSOI technology for space electronics applications. 展开更多
关键词 laser test single event transient charge collection partially depleted silicon on insulator
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Transient response of a spherical cavity with a partially sealed shell embedded in viscoelastic saturated soil 被引量:14
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作者 刘干斌 谢康和 《Journal of Zhejiang University-Science A(Applied Physics & Engineering)》 SCIE EI CAS CSCD 2005年第3期194-201,共8页
Based on Biot’s wave equation, this paper discusses the transient response of a spherical cavity with a partially sealed shell embedded in viscoelastic saturated soil. The analytical solution is derived for the trans... Based on Biot’s wave equation, this paper discusses the transient response of a spherical cavity with a partially sealed shell embedded in viscoelastic saturated soil. The analytical solution is derived for the transient response to an axisymmetric surface load and fluid pressure in Laplace transform domain. Numerical results are obtained by inverting the Laplace transform presented by Durbin, and are used to analyze the influences of the partial permeable property of boundary and relative rigidity of shell and soil on the transient response of the spherical cavity. It is shown that the influence of these two parameters is remarkable. The available solutions of permeable and impermeable boundary without shell are only two extreme cases of this paper. 展开更多
关键词 VISCOELASTICITY partial sealing Spherical shell transient response
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Dynamic study in partial transient liquid phase bonding of Si_3N_4
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作者 邹家生 初雅杰 +1 位作者 许志荣 陈光 《China Welding》 EI CAS 2004年第2期101-105,共5页
Dynamics in partial transient liquid phase bonding (PTLP bonding) of Si_3N_4 ceramic with Ti/Cu/Ti multi-interlayer was systematically studied through micro-analysis of joint interfaces. The results show that growth o... Dynamics in partial transient liquid phase bonding (PTLP bonding) of Si_3N_4 ceramic with Ti/Cu/Ti multi-interlayer was systematically studied through micro-analysis of joint interfaces. The results show that growth of reaction layer and isothermal solidification procession do at the same time. Growth of reaction layer and moving of isothermal solidification interface obey the parabolic law governed by the diffusion of participating elements during the PTLP bonding. Coordination of the above two dynamics process is done through time and temperature. When reaction layer thickness is suitable and isothermal solidification process is finished, the high bonding strength at room temperature and high temperature are obtained. 展开更多
关键词 partial transient liquid phase bonding silicon nitride ceramic isothermal solidification reaction layer KINETICS
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Transient Hydromagnetic Stagnation-Point Flow across a Vertical Surface with Partial Slip in a Chemically Reactive Medium
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作者 Shaban Museh Ibrahim Yakubu Seini 《Journal of Applied Mathematics and Physics》 2022年第2期270-288,共19页
A numerical study of partial slip boundary condition is investigated. The stagnation-point flow problem involving some physio-chemical parameters has been elucidated. The process involves developing a multivariate mat... A numerical study of partial slip boundary condition is investigated. The stagnation-point flow problem involving some physio-chemical parameters has been elucidated. The process involves developing a multivariate mathematical model for the flow and transforming it into a coupled univariate equation. Key parameters of interest in the study are the buoyancy force, the surface stretching, the unsteadiness, the radiation, the dissipation effects, the slip effects, the species reaction and the magnetic field parameters. It is concluded that the impact of physio-chemical factors significantly alters the kinematics of the flow in order to optimally achieve desired product characteristics. 展开更多
关键词 transient Flow Stagnation-Point partial Slip Heat Transfer VISCOSITY Incompressible Fluid
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Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET
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作者 闫薇薇 高林春 +4 位作者 李晓静 赵发展 曾传滨 罗家俊 韩郑生 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第9期520-525,共6页
In this study, we investigate the single-event transient(SET) characteristics of a partially depleted silicon-on-insulator(PDSOI) metal-oxide-semiconductor(MOS) device induced by a pulsed laser.We measure and an... In this study, we investigate the single-event transient(SET) characteristics of a partially depleted silicon-on-insulator(PDSOI) metal-oxide-semiconductor(MOS) device induced by a pulsed laser.We measure and analyze the drain transient current at the wafer level. The results indicate that the body-drain junction and its vicinity are more SET sensitive than the other regions in PD-SOI devices.We use ISE 3D simulation tools to analyze the SET response when different regions of the device are hit. Then, we discuss in detail the characteristics of transient currents and the electrostatic potential distribution change in devices after irradiation. Finally, we analyze the parasitic bipolar junction transistor(p-BJT) effect by performing both a laser test and simulations. 展开更多
关键词 single-event transient pulsed laser parasitic bipolar junction transistor partially depleted silicon on insulator
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GIS局部颗粒放电的里德堡原子传感检测
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作者 潘峰 钟立华 +3 位作者 纪伊琳 杨雨瑶 徐浩田 王理想 《电测与仪表》 北大核心 2026年第1期132-138,共7页
气体绝缘开关设备(gas-insulated switchgear,GIS)作为现代电力系统的核心组件,其内部局部放电(partial discharge,PD)的精确检测是评估绝缘状态、保障设备可靠性与电网稳定性的关键。然而,传统超高频(ultrahigh frequency,UHF)电磁传... 气体绝缘开关设备(gas-insulated switchgear,GIS)作为现代电力系统的核心组件,其内部局部放电(partial discharge,PD)的精确检测是评估绝缘状态、保障设备可靠性与电网稳定性的关键。然而,传统超高频(ultrahigh frequency,UHF)电磁传感器因金属腔体导致的信号严重衰减(20~40 dB/m)、开窗安装破坏气密性引发SF 6泄漏风险以及有限动态范围(60~80 dB)难以覆盖全量程放电等问题,制约了其在GIS状态检修中的实际应用。为突破上述技术瓶颈,创新性地提出一种基于里德堡原子电磁诱导透明(electromagnetically induced transparency,EIT)效应的量子化UHF电场传感方法。所提方法核心优势在于:利用高激发态铯原子(n=72 D_(5/2))的极高电极化率,通过光学读出机制实现本质安全测量;结合852 nm探测光与509 nm泵浦光的双频激光系统及精密锁频技术,构建稳定EIT窗口;设计非金属原子气室天线,首次实现GIS颗粒放电所激发的0.5~3 GHz频段瞬态脉冲电场的近场探测。首次验证了里德堡原子传感技术对GIS典型缺陷(金属颗粒)放电的有效检测能力,通过量子精密测量为电力设备绝缘在线监测提供了一种高灵敏度、宽频带、本质安全的光纤传感新方案,有望推动状态检修模式向智能化、精准化方向演进,为智能电网建设提供关键技术支撑。 展开更多
关键词 里德堡原子 电磁诱导透明 GIS局部放电 瞬态电场测量 量子传感 光纤传感 智能电网
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Improvement of Joint Strength of SiCp/Al Metal Matrix Composite in Transient Liquid Phase Bonding Using Cu/Ni/Cu Film Interlayer 被引量:1
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作者 Rongfa CHEN Dunwen ZUO Min WANG 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2006年第3期291-294,共4页
The compact oxide on the surface of SiCp/Al metal matrix composite (SiCp/Al MMC) greatly depends on the property of the joint. Inlaid sputtering target was applied to etch the oxide completely on the bonding surface... The compact oxide on the surface of SiCp/Al metal matrix composite (SiCp/Al MMC) greatly depends on the property of the joint. Inlaid sputtering target was applied to etch the oxide completely on the bonding surface of SiCp/Al MMC by plasma erosion. Cu/Ni/Cu film of 5μm in thickness was prepared by magnetron sputtering method on the clean bonding surface in the same vacuum chamber, which was acted as an interlayer in transient liquid phase (TLP) bonding process. Compared with the same thickness of single Cu foil and Ni foil interlayer, the shear strength of 200 MPa was obtained using Cu/Ni/Cu film interlayer during TLP bonding, which was 89.7% that of base metal. In addition, homogenization of the bonding region and no particle segregation in interfacial region were found by analysis of the joint microstructure. Scanning electron microscopy (SEM) was used to observe the micrograph of the joint interface. The result shows that a homogenous microstructure of joint was achieved, which is similar with that of based metal. 展开更多
关键词 SiCp/Al MMC Magnetron sputtering Cu/Ni/Cu film transient liquid-phase(TLP) bonding
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GIS暂态电压局部放电融合检测技术及其应用 被引量:1
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作者 王昊天 王宇昂 +2 位作者 颜林 韩旭涛 李军浩 《电工技术学报》 北大核心 2025年第19期6306-6316,6358,共12页
气体绝缘组合电器(GIS)是变电站现场的关键设备,其安全运行直接关系电网的安全运行和供电可靠性。该文首先设计了一种用于GIS的暂态电压-局部放电融合传感器,能够实现对于GIS电压及局部放电特高频、光学信号的一体化测量,并设计了径向... 气体绝缘组合电器(GIS)是变电站现场的关键设备,其安全运行直接关系电网的安全运行和供电可靠性。该文首先设计了一种用于GIS的暂态电压-局部放电融合传感器,能够实现对于GIS电压及局部放电特高频、光学信号的一体化测量,并设计了径向基函数网络代理的自适应差分进化(RBFN-SaDE)方法对传感器结构进行优化。测试结果表明,融合传感器电压测量频率响应在50 Hz~100 MHz的偏差小于0.3 dB,且传感器在300~1 500 MHz频率范围内的特高频平均有效高度为13.25 mm,能够有效地测量GIS电压及局部放电信号。然后,基于实体GIS搭建了测试平台,围绕绝缘子沿面放电开展了融合传感器的有效性测试,结果表明传感器可准确地测量工频及工频叠加电压,局部放电特高频与光学信号互补,能够有效地对GIS状态开展在线监测。最后,围绕融合传感器设计了在线监测系统,并将该系统应用至现场变电站的在运设备,实现了对GIS合闸过程及运行工况的电压-局部放电融合在线监测,对GIS在线监测装置的设计与应用具有一定的指导意义。 展开更多
关键词 气体绝缘组合电器 状态检测 局部放电 暂态电压 荧光光纤
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基于分布式地电压测量的开关柜放电溯源方法 被引量:3
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作者 谢荣斌 薛静 +2 位作者 靳斌 王瑞果 关浩斌 《高压电器》 北大核心 2025年第1期19-29,共11页
暂态地电压(TEV)检测是测量开关柜局部放电的常用方法之一,然而由于现场接地系统布置等原因,其信号时常在设备间出现串扰,从而给放电源的定位带来困难。针对该问题,分别构建了单体开关柜与变电站开关室并排开关柜的电磁仿真模型,探究了... 暂态地电压(TEV)检测是测量开关柜局部放电的常用方法之一,然而由于现场接地系统布置等原因,其信号时常在设备间出现串扰,从而给放电源的定位带来困难。针对该问题,分别构建了单体开关柜与变电站开关室并排开关柜的电磁仿真模型,探究了在放电源未知的条件下单体开关柜暂态地电压信号的最佳测量点,以及多台开关柜共用接地体时的放电源定位方法。仿真结果表明,在放电源位置未知的条件下,柜体正面中下方的测量点位具有最佳的测量效果;对于共用接地体的并排开关柜,各柜对于同一放电脉冲的响应幅值随其与放电源的距离增加而显著衰减,因此可通过构建分布式传感器网络,在同步检测的条件下实现放电源的定位。最后,在某变电站开展的现场实测表明,分布式同步测量定位方法具有良好的应用效果,对暂态地电压法的现场应用提供了有价值的参考。 展开更多
关键词 局部放电 暂态地电压 电磁仿真 分布式传感器网络 放电定位
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采用GIS局部放电UHF传感器的宽频带电压测量方法 被引量:1
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作者 胡方言 丁登伟 +1 位作者 孙强 刘卫东 《高电压技术》 北大核心 2025年第7期3234-3244,共11页
为满足利用气体绝缘开关设备(gas insulated switchgear,GIS)局部放电特高频(ultra-high frequency,UHF)传感器记录电力系统故障波形及故障定位等宽频带暂态电压测量的需求,设计了针对GIS局部放电传感器的低压臂电路,并对其特性进行了... 为满足利用气体绝缘开关设备(gas insulated switchgear,GIS)局部放电特高频(ultra-high frequency,UHF)传感器记录电力系统故障波形及故障定位等宽频带暂态电压测量的需求,设计了针对GIS局部放电传感器的低压臂电路,并对其特性进行了试验研究。在分压部分,采用了两级电容分压方法以兼顾高分压比和高频特性的需求。在改进低频性能方面,在第二级分压输出信号后接入了阻抗变换模块。为过滤由传感器自身结构导致的高频振荡,在阻抗变换后接入了四极点Sallen-Key低通滤波器。测量系统的低频特性可通过其充电后指数放电信号的下降时间确定。设计了阶跃信号发生器并通过阶跃响应获得了测量系统的高频截止频率,该发生器的输出信号上升时间小于5 ns,输出电压从5 000~30 000 V可调节。经过测试,测量系统实现了带宽为0.14 Hz~9.1 MHz的宽频带暂态电压测量。 展开更多
关键词 局部放电UHF传感器 宽频带电压测量 两级电容分压 阻抗变换 Sallen-Key低通滤波器 频率特性
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基于瞬态响应与幅值分析的变压器层压板局放信号波形特征数值模拟 被引量:1
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作者 虞晓巍 《微型电脑应用》 2025年第3期260-264,共5页
针对变压器层压板局放故障诊断难度过高的问题,本文基于瞬态响应与幅值分析的变压器层压板局放信号波形特征数值模拟方法。利用变压器层压板局放信号采集设备,采集变压器层压板局放信号。利用Hilbert变换,解析所采集的变压器层压板局放... 针对变压器层压板局放故障诊断难度过高的问题,本文基于瞬态响应与幅值分析的变压器层压板局放信号波形特征数值模拟方法。利用变压器层压板局放信号采集设备,采集变压器层压板局放信号。利用Hilbert变换,解析所采集的变压器层压板局放信号。从解析后的局放信号中,利用交叉小波变换方法,提取幅值特征;利用经验模态分解(EMD)方法,提取瞬态响应特征,完成局放信号波形特征的有效提取。利用EmbDesign 8.0软件,作为变压器层压板局放信号波形特征的数值模拟软件,数值模拟结果表明,该方法可以精准提取变压器层压板局放信号的瞬态响应特征、幅值特征,提升变压器层压板局放故障的诊断精度。 展开更多
关键词 瞬态响应 幅值分析 变压器 层压板 局放信号 波形特征
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强电磁脉冲场-线耦合机理及建模方法
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作者 张松 杨光胜 +4 位作者 蔡永翔 徐玉韬 李跃 陈怀飞 杜亚平 《电力大数据》 2025年第10期12-21,共10页
随着电力系统电子设备增加,其布线系统更易受雷电电磁脉冲侵害,亟须精确的瞬态响应评估方法。现有研究多聚焦于传输线模型和直接雷击效应,对间接雷击下闭合环线结构的感应瞬态特性尚存不足。该文采用部分元等效电路(partial element equ... 随着电力系统电子设备增加,其布线系统更易受雷电电磁脉冲侵害,亟须精确的瞬态响应评估方法。现有研究多聚焦于传输线模型和直接雷击效应,对间接雷击下闭合环线结构的感应瞬态特性尚存不足。该文采用部分元等效电路(partial element equivalent circuit method,PEEC)方法,引入雷电通道工程模型以计算外部入射场,建立了适用于闭合环线结构的全波仿真模型。针对模型存在数值不稳定问题,该文剖析了其产生机理,并提出了一种高数值稳定性的算法。通过与时域有限差分(finite-difference time-domain,FDTD)方法对比,验证了该算法在精度与稳定性上的优势。此外,研究还探讨了基于Uman计算外部电压源时的不稳定性问题。最后,将所构建的全波仿真模型应用于光伏直流电路的雷电感应瞬态分析,验证了模型为复杂线缆系统的雷电防护设计提供理论支撑的能力。 展开更多
关键词 瞬态评估 部分元等效电路(PEEC) 光伏直流电路 雷击 雷电防护
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基于新型电磁耦合法的XLPE电力电缆局部放电检测方法
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作者 胡勇 《电工技术》 2025年第6期238-242,共5页
局部放电检测是掌握XLPE电力电缆绝缘状况的重要手段。目前,基于传统电磁耦合法的XLPE电力电缆局部放电检测方法使用的传感器工作频带窄,且安装不便。针对此问题,提出了一种基于新型电磁耦合法的XLPE电力电缆局部放电检测方法,设计了一... 局部放电检测是掌握XLPE电力电缆绝缘状况的重要手段。目前,基于传统电磁耦合法的XLPE电力电缆局部放电检测方法使用的传感器工作频带窄,且安装不便。针对此问题,提出了一种基于新型电磁耦合法的XLPE电力电缆局部放电检测方法,设计了一款基于宽频磁场耦合原理的暂态磁场传感器。通过实验室性能测试、现场模拟试验验证和现场检测分别对传感器的性能进行测试。结果表明:该传感器工作频段为0.3~340 MHz、380~1500 MHz,涵盖了高频和特高频的检测频段,覆盖了电缆局部放电信号的主要能量范围;在300~1500 MHz频段范围内的平均等效高度为8.9 mm,检测灵敏度和信噪比均优于HFCT。此外,该传感器结构小巧、安装方便,可广泛应用于电力电缆、开关柜、GIS等设备的局部放电检测。 展开更多
关键词 局部放电 电力电缆 工作频带 暂态磁场传感器 灵敏度
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基于超声波和暂态地电压的开关柜故障定位研究
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作者 王桂东 《四川冶金》 2025年第4期39-45,共7页
高压开关柜发生局部放电后,对局放源的定位将有助于寻找与确定开关柜绝缘缺陷部件,方便识别和修复设备隐患,提高开关柜的运维效率。本文结合暂态地电压法和超声波局部放电检测方法,开展了局部放电发生时的声-电信号传播特性的仿真研究,... 高压开关柜发生局部放电后,对局放源的定位将有助于寻找与确定开关柜绝缘缺陷部件,方便识别和修复设备隐患,提高开关柜的运维效率。本文结合暂态地电压法和超声波局部放电检测方法,开展了局部放电发生时的声-电信号传播特性的仿真研究,利用暂态地电压信号与超声波阵列传感器接收信号的时间差,实现了对局放源的精准定位。 展开更多
关键词 高压开关柜 局部放电 暂态地电压 超声波 故障定位
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Ti箔厚度对Si_3N_4/Ti/Cu/Ti/Si_3N_4部分瞬间液相连接界面结构及强度的影响 被引量:8
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作者 邹家生 翟建广 +1 位作者 初雅杰 陈铮 《焊接学报》 EI CAS CSCD 北大核心 2003年第6期19-22,共4页
采用Ti/Cu/Ti中间层在1273K、180min的条件下,改变Ti箔厚度进行Si3N4陶瓷的部分瞬间液相(PTLP)连接,讨论Ti箔厚度对界面结构及连接接头强度的影响,用扫描电镜、电子探针对连接界面区域进行了分析。结果表明,在试验范围内,Ti箔厚度为10μ... 采用Ti/Cu/Ti中间层在1273K、180min的条件下,改变Ti箔厚度进行Si3N4陶瓷的部分瞬间液相(PTLP)连接,讨论Ti箔厚度对界面结构及连接接头强度的影响,用扫描电镜、电子探针对连接界面区域进行了分析。结果表明,在试验范围内,Ti箔厚度为10μm时Si3N4/Ti/Cu/Ti/Si3N4接头的室温强度最高,为210MPa。PTLP连接时,当连接温度和时间不变,且连接时间能保证等温凝固过程充分进行的条件下,Si3N4/Ti/Cu/Ti/Si3N4连接界面结构、反应层厚度、等温凝固层厚度随着Ti箔厚度改变而改变。 展开更多
关键词 部分瞬间液相连 钛箔厚度 陶瓷 界面结构 连接强度
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Ti/Cu/Ti部分瞬间液相连接Si_3N_4的界面反应和连接强度 被引量:33
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作者 周飞 李志章 《中国有色金属学报》 EI CAS CSCD 北大核心 2001年第2期273-278,共6页
用Ti/Cu/Ti多层中间层在 12 73K进行氮化硅陶瓷部分瞬间液相连接 ,实验考察了保温时间对连接强度的影响。用SEM ,EPMA和XRD对连接界面进行微观分析 ,并用扩散路径理论 ,研究了界面反应产物的形成过程。结果表明 :在连接过程中 ,Cu与Ti... 用Ti/Cu/Ti多层中间层在 12 73K进行氮化硅陶瓷部分瞬间液相连接 ,实验考察了保温时间对连接强度的影响。用SEM ,EPMA和XRD对连接界面进行微观分析 ,并用扩散路径理论 ,研究了界面反应产物的形成过程。结果表明 :在连接过程中 ,Cu与Ti相互扩散 ,形成Ti活度较高的液相 ,并与氮化硅发生反应 ,在界面形成Si3N4 /TiN/Ti5Si3+Ti5Si4 +TiSi2 /TiSi2 +Cu3Ti2 (Si) /Cu的梯度层。 展开更多
关键词 部分瞬间液相连接 氮化硅 扩散路径 界面反应 连接强度 陶瓷 钎焊
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