Microbatteries(MBs)are crucial to power miniaturized devices for the Internet of Things.In the evolutionary journey of MBs,fabrication technology emerges as the cornerstone,guiding the intricacies of their configurati...Microbatteries(MBs)are crucial to power miniaturized devices for the Internet of Things.In the evolutionary journey of MBs,fabrication technology emerges as the cornerstone,guiding the intricacies of their configuration designs,ensuring precision,and facilitating scalability for mass production.Photolithography stands out as an ideal technology,leveraging its unparalleled resolution,exceptional design flexibility,and entrenched position within the mature semiconductor industry.However,comprehensive reviews on its application in MB development remain scarce.This review aims to bridge that gap by thoroughly assessing the recent status and promising prospects of photolithographic microfabrication for MBs.Firstly,we delve into the fundamental principles and step-by-step procedures of photolithography,offering a nuanced understanding of its operational mechanisms and the criteria for photoresist selection.Subsequently,we highlighted the specific roles of photolithography in the fabrication of MBs,including its utilization as a template for creating miniaturized micropatterns,a protective layer during the etching process,a mold for soft lithography,a constituent of MB active component,and a sacrificial layer in the construction of micro-Swiss-roll structure.Finally,the review concludes with a summary of the key challenges and future perspectives of MBs fabricated by photolithography,providing comprehensive insights and sparking research inspiration in this field.展开更多
Coupled-waveguide devices are essential in photonic integrated circuits for coupling,polarization handling,and mode manipulation.However,the performance of these devices usually suffers from high wavelength and struct...Coupled-waveguide devices are essential in photonic integrated circuits for coupling,polarization handling,and mode manipulation.However,the performance of these devices usually suffers from high wavelength and structure sensitivity,which makes it challenging to realize broadband and reliable on-chip optical functions.Recently,topological pumping of edge states has emerged as a promising solution for implementing robust optical couplings.In this paper,we propose and experimentally demonstrate broadband on-chip mode manipulation with very large fabrication tolerance based on the Rice–Mele modeled silicon waveguide arrays.The Thouless pumping mechanism is employed in the design to implement broadband and robust mode conversion and multiplexing.The experimental results prove that various mode-order conversions with low insertion losses and intermodal crosstalk can be achieved over a broad bandwidth of 80 nm ranging from 1500 to 1580 nm.Thanks to such a topological design,the device has a remarkable fabrication tolerance of±70 nm for the structural deviations in waveguide width and gap distance,which is,to the best of our knowledge,the highest among the coupled-waveguide mode-handling devices reported so far.As a proof-of-concept experiment,we cascade the topological mode-order converters to form a four-channel mode-division multiplexer and demonstrate the transmission of a 200-Gb/s 16-quadrature amplitude modulation signal for each mode channel,with the bit error rates below the 7%forward error correction threshold of 3.8×10^(-3).We reveal the possibility of developing new classes of broadband and fabrication-tolerant coupled-waveguide devices with topological photonic approaches,which may find applications in many fields,including optical interconnects,quantum communications,and optical computing.展开更多
A new on-chip light source configuration has been proposed,which utilizes the interaction between a microwave or laser and a dielectric nanopillar array to generate a periodic electromagnetic near-field and applies pe...A new on-chip light source configuration has been proposed,which utilizes the interaction between a microwave or laser and a dielectric nanopillar array to generate a periodic electromagnetic near-field and applies periodic transverse acceleration to relativistic electrons to generate high-energy photon radiation.The dielectric nanopillar array interacting with the driving field acts as an electron undulator,in which the near-field drives electrons to oscillate.When an electron beam propagates through this nanopillar array in this light source configuration,it is subjected to a periodic transverse near-field force and will radiate X-ray or evenγ-ray high-energy photons after a relativistic frequency up-conversion.Compared with the undulator which is based on the interaction between strong lasers and nanostructures to generate a plasmonic near-field,this configuration is less prone to damage during operation.展开更多
Multidimensional integration and multifunctional com-ponent assembly have been greatly explored in recent years to extend Moore’s Law of modern microelectronics.However,this inevitably exac-erbates the inhomogeneity ...Multidimensional integration and multifunctional com-ponent assembly have been greatly explored in recent years to extend Moore’s Law of modern microelectronics.However,this inevitably exac-erbates the inhomogeneity of temperature distribution in microsystems,making precise temperature control for electronic components extremely challenging.Herein,we report an on-chip micro temperature controller including a pair of thermoelectric legs with a total area of 50×50μm^(2),which are fabricated from dense and flat freestanding Bi2Te3-based ther-moelectric nano films deposited on a newly developed nano graphene oxide membrane substrate.Its tunable equivalent thermal resistance is controlled by electrical currents to achieve energy-efficient temperature control for low-power electronics.A large cooling temperature difference of 44.5 K at 380 K is achieved with a power consumption of only 445μW,resulting in an ultrahigh temperature control capability over 100 K mW^(-1).Moreover,an ultra-fast cooling rate exceeding 2000 K s^(-1) and excellent reliability of up to 1 million cycles are observed.Our proposed on-chip temperature controller is expected to enable further miniaturization and multifunctional integration on a single chip for microelectronics.展开更多
Integrated photonic devices are essential for on-chip optical communication,optical-electronic systems,and quantum information sciences.To develop a high-fidelity interface between photonics in various frequency domai...Integrated photonic devices are essential for on-chip optical communication,optical-electronic systems,and quantum information sciences.To develop a high-fidelity interface between photonics in various frequency domains without disturbing their quantum properties,nonlinear frequency conversion,typically steered with the quadratic(χ2)process,should be considered.Furthermore,another degree of freedom in steering the spatial modes during theχ2 process,with unprecedent mode intensity is proposed here by modulating the lithium niobate(LN)waveguide-based inter-mode quasi-phasematching conditions with both temperature and wavelength parameters.Under high incident light intensities(25 and 27.8 dBm for the pump and the signal lights,respectively),mode conversion at the sum-frequency wavelength with sufficient high output power(−7–8 dBm)among the TM01,TM10,and TM00 modes is realized automatically with characterized broad temperature(ΔT≥8°C)and wavelength windows(Δλ≥1 nm),avoiding the previous efforts in carefully preparing the signal or pump modes.The results prove that high-intensity spatial modes can be prepared at arbitrary transparent wavelength of theχ2 media toward on-chip integration,which facilitates the development of chip-based communication and quantum information systems because spatial correlations can be applied to generate hyperentangled states and provide additional robustness in quantum error correction with the extended Hilbert space.展开更多
GaN-based devices have developed significantly in recent years due to their promising applications and research potential.A major goal is to monolithically integrate various GaN-based components onto a single chip to ...GaN-based devices have developed significantly in recent years due to their promising applications and research potential.A major goal is to monolithically integrate various GaN-based components onto a single chip to create future optoelectronic systems with low power consumption.This miniaturized integration not only enhances multifunctional performance but also reduces material,processing,and packaging costs.In this study,we present an optoelectronic on-chip system fabricated using a top-down approach on a III-nitride-on-silicon wafer.The system includes a near-ultraviolet light source,a monitor,a 180°bent waveguide,an electro-absorption modulator,and a receiver,all integrated without the need for regrowth or post-growth doping.35 Mbit/s optical data communication is demonstrated through light propagation within the system,confirming its potential for compact GaN-based optoelectronic solutions.展开更多
基金supported by the National Natural Science Foundation of China(22125903,22439003,22209175)the National Key R&D Program of China(Grant 2022YFA1504100,2023YFB4005204)+1 种基金the Energy Revolution S&T Program of Yulin Innovation Institute of Clean Energy(Grant E412010508)the State Key Laboratory of Catalysis(No:2024SKL-A-001)。
文摘Microbatteries(MBs)are crucial to power miniaturized devices for the Internet of Things.In the evolutionary journey of MBs,fabrication technology emerges as the cornerstone,guiding the intricacies of their configuration designs,ensuring precision,and facilitating scalability for mass production.Photolithography stands out as an ideal technology,leveraging its unparalleled resolution,exceptional design flexibility,and entrenched position within the mature semiconductor industry.However,comprehensive reviews on its application in MB development remain scarce.This review aims to bridge that gap by thoroughly assessing the recent status and promising prospects of photolithographic microfabrication for MBs.Firstly,we delve into the fundamental principles and step-by-step procedures of photolithography,offering a nuanced understanding of its operational mechanisms and the criteria for photoresist selection.Subsequently,we highlighted the specific roles of photolithography in the fabrication of MBs,including its utilization as a template for creating miniaturized micropatterns,a protective layer during the etching process,a mold for soft lithography,a constituent of MB active component,and a sacrificial layer in the construction of micro-Swiss-roll structure.Finally,the review concludes with a summary of the key challenges and future perspectives of MBs fabricated by photolithography,providing comprehensive insights and sparking research inspiration in this field.
基金supported by the National Key R&D Program of China(Grant No.2023YFB2905503)the National Natural Science Foundation of China(Grant Nos.62035016,62105200,62475146,and 62341508).
文摘Coupled-waveguide devices are essential in photonic integrated circuits for coupling,polarization handling,and mode manipulation.However,the performance of these devices usually suffers from high wavelength and structure sensitivity,which makes it challenging to realize broadband and reliable on-chip optical functions.Recently,topological pumping of edge states has emerged as a promising solution for implementing robust optical couplings.In this paper,we propose and experimentally demonstrate broadband on-chip mode manipulation with very large fabrication tolerance based on the Rice–Mele modeled silicon waveguide arrays.The Thouless pumping mechanism is employed in the design to implement broadband and robust mode conversion and multiplexing.The experimental results prove that various mode-order conversions with low insertion losses and intermodal crosstalk can be achieved over a broad bandwidth of 80 nm ranging from 1500 to 1580 nm.Thanks to such a topological design,the device has a remarkable fabrication tolerance of±70 nm for the structural deviations in waveguide width and gap distance,which is,to the best of our knowledge,the highest among the coupled-waveguide mode-handling devices reported so far.As a proof-of-concept experiment,we cascade the topological mode-order converters to form a four-channel mode-division multiplexer and demonstrate the transmission of a 200-Gb/s 16-quadrature amplitude modulation signal for each mode channel,with the bit error rates below the 7%forward error correction threshold of 3.8×10^(-3).We reveal the possibility of developing new classes of broadband and fabrication-tolerant coupled-waveguide devices with topological photonic approaches,which may find applications in many fields,including optical interconnects,quantum communications,and optical computing.
基金pported by the National Natural Science Foundation of China(Grant Nos.12325409,12388102,12074398,and U2267204)the CAS Project for Young Scientists in Basic Research(Grant No.YSBR-060)the Shanghai Pilot Program for Basic Research,Chinese Academy of Sciences Shanghai Branch。
文摘A new on-chip light source configuration has been proposed,which utilizes the interaction between a microwave or laser and a dielectric nanopillar array to generate a periodic electromagnetic near-field and applies periodic transverse acceleration to relativistic electrons to generate high-energy photon radiation.The dielectric nanopillar array interacting with the driving field acts as an electron undulator,in which the near-field drives electrons to oscillate.When an electron beam propagates through this nanopillar array in this light source configuration,it is subjected to a periodic transverse near-field force and will radiate X-ray or evenγ-ray high-energy photons after a relativistic frequency up-conversion.Compared with the undulator which is based on the interaction between strong lasers and nanostructures to generate a plasmonic near-field,this configuration is less prone to damage during operation.
基金The authors thank D.Berger,D.Hofmann and C.Kupka in IFW Dresden for helpful technical support.H.R.acknowledges funding from the DFG(Deutsche Forschungsgemeinschaft)within grant number RE3973/1-1.Q.J.,H.R.and K.N.conceived the work.With the support from N.Y.and X.J.,Q.J.and T.G.fabricated the thermoelectric films and conducted the structural and compositional characterizations.Q.J.prepared microchips and fabricated the on-chip micro temperature controllers.Q.J.and N.P.carried out the temperature-dependent material and device performance measurements.Q.J.and H.R.performed the simulation and analytical calculations.Q.J.,H.R.and K.N.wrote the manuscript with input from the other coauthors.All the authors discussed the results and commented on the manuscript.
文摘Multidimensional integration and multifunctional com-ponent assembly have been greatly explored in recent years to extend Moore’s Law of modern microelectronics.However,this inevitably exac-erbates the inhomogeneity of temperature distribution in microsystems,making precise temperature control for electronic components extremely challenging.Herein,we report an on-chip micro temperature controller including a pair of thermoelectric legs with a total area of 50×50μm^(2),which are fabricated from dense and flat freestanding Bi2Te3-based ther-moelectric nano films deposited on a newly developed nano graphene oxide membrane substrate.Its tunable equivalent thermal resistance is controlled by electrical currents to achieve energy-efficient temperature control for low-power electronics.A large cooling temperature difference of 44.5 K at 380 K is achieved with a power consumption of only 445μW,resulting in an ultrahigh temperature control capability over 100 K mW^(-1).Moreover,an ultra-fast cooling rate exceeding 2000 K s^(-1) and excellent reliability of up to 1 million cycles are observed.Our proposed on-chip temperature controller is expected to enable further miniaturization and multifunctional integration on a single chip for microelectronics.
基金financial supports from National Key Research and Development Program of China(2021YFB3602500)Self-deployment Project of Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China(2021ZZ101)National Natural Science Foundation of China(Grant Nos.62275247 and 61905246).
文摘Integrated photonic devices are essential for on-chip optical communication,optical-electronic systems,and quantum information sciences.To develop a high-fidelity interface between photonics in various frequency domains without disturbing their quantum properties,nonlinear frequency conversion,typically steered with the quadratic(χ2)process,should be considered.Furthermore,another degree of freedom in steering the spatial modes during theχ2 process,with unprecedent mode intensity is proposed here by modulating the lithium niobate(LN)waveguide-based inter-mode quasi-phasematching conditions with both temperature and wavelength parameters.Under high incident light intensities(25 and 27.8 dBm for the pump and the signal lights,respectively),mode conversion at the sum-frequency wavelength with sufficient high output power(−7–8 dBm)among the TM01,TM10,and TM00 modes is realized automatically with characterized broad temperature(ΔT≥8°C)and wavelength windows(Δλ≥1 nm),avoiding the previous efforts in carefully preparing the signal or pump modes.The results prove that high-intensity spatial modes can be prepared at arbitrary transparent wavelength of theχ2 media toward on-chip integration,which facilitates the development of chip-based communication and quantum information systems because spatial correlations can be applied to generate hyperentangled states and provide additional robustness in quantum error correction with the extended Hilbert space.
基金This work was supported in part by the National Natural Science Founda⁃tion of China under Grant No.U21A20495National Key Research and De⁃velopment Program of China under Grant No.2022YFE0112000High⁃er Education Discipline Innovation Project under Grant No.D17018.
文摘GaN-based devices have developed significantly in recent years due to their promising applications and research potential.A major goal is to monolithically integrate various GaN-based components onto a single chip to create future optoelectronic systems with low power consumption.This miniaturized integration not only enhances multifunctional performance but also reduces material,processing,and packaging costs.In this study,we present an optoelectronic on-chip system fabricated using a top-down approach on a III-nitride-on-silicon wafer.The system includes a near-ultraviolet light source,a monitor,a 180°bent waveguide,an electro-absorption modulator,and a receiver,all integrated without the need for regrowth or post-growth doping.35 Mbit/s optical data communication is demonstrated through light propagation within the system,confirming its potential for compact GaN-based optoelectronic solutions.
