A unified breakdown model of SOI RESURF device with uniform,step,or linear drift region doping profile is firstly proposed.By the model,the electric field distribution and breakdown voltage are researched in detail fo...A unified breakdown model of SOI RESURF device with uniform,step,or linear drift region doping profile is firstly proposed.By the model,the electric field distribution and breakdown voltage are researched in detail for the step numbers from 0 to infinity.The critic electric field as the function of the geometry parameters and doping profile is derived.For the thick film device,linear doping profile can be replaced by a single or two steps doping profile in the drift region due to a considerable uniformly lateral electric field,almost ideal breakdown voltage,and simplified design and fabrication.The availability of the proposed model is verified by the good accordance among the analytical results,numerical simulations,and reported experiments.展开更多
The addition of a buffer layer can improve the device＇s secondary breakdown voltage, thus, improving the single event burnout （SEB） threshold voltage. In this paper, an N type linear doping buffer layer is proposed...The addition of a buffer layer can improve the device＇s secondary breakdown voltage, thus, improving the single event burnout （SEB） threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an op- timized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer ~ayer. So the linear buffer layer is more advantageous to improving the device＇s SEB performance.展开更多
To overcome short-channel effects （SCEs） in high-performance device applications, a novel structure of CNTFET with a combination of halo and linear doping structure （HL-CNTFET） has been proposed. It has been theor...To overcome short-channel effects （SCEs） in high-performance device applications, a novel structure of CNTFET with a combination of halo and linear doping structure （HL-CNTFET） has been proposed. It has been theoretically investigated by a quantum kinetic model, which is based on two-dimensional non-equilibrium Green＇s functions solved self-consistently with Poisson＇s equations. We have studied the effect of halo doping and linear doping structure on static and dynamical performances of HL-CNTFET. It is demonstrated that a halo doping structure can decrease the drain leakage current and improve the on/off current ratio, and that linear doping can improve high-frequency and switching performance.展开更多
Based on the theoretical and experimental investigation of a thin silicon layer（TSL） with linear variable doping（LVD） and further research on the TSL LVD with a multiple step field plate（MSFP）,a breakdown voltag...Based on the theoretical and experimental investigation of a thin silicon layer（TSL） with linear variable doping（LVD） and further research on the TSL LVD with a multiple step field plate（MSFP）,a breakdown voltage（BV） model is proposed and experimentally verified in this paper.With the two-dimensional Poisson equation of the silicon on insulator（SOI） device,the lateral electric field in drift region of the thin silicon layer is assumed to be constant.For the SOI device with LVD in the thin silicon layer,the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field（ENDIF）,from which the reduced surface field（RESURF） condition is deduced.The drain in the centre of the device has a good self-isolation effect,but the problem of the high voltage interconnection（HVI） line will become serious.The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device.Based on this model,the TSL LVD SOI n-channel lateral double-diffused MOSFET（nLDMOS） with MSFP is realized.The experimental breakdown voltage（BV） and specific on-resistance（R on,sp） of the TSL LVD SOI device are 694 V and 21.3 ·mm 2 with a drift region length of 60 μm,buried oxide layer of 3 μm,and silicon layer of 0.15 μm,respectively.展开更多
In the framework of effective mass approximation, we theoretically investigate the electronic structure of the Si δ-doped InAIN/GaN single quantum well by solving numerically the coupled equations Schrodinger-Poisson...In the framework of effective mass approximation, we theoretically investigate the electronic structure of the Si δ-doped InAIN/GaN single quantum well by solving numerically the coupled equations Schrodinger-Poisson self-consistently. The linear, nonlinear optical absorption coefficients and relative refractive index changes are calculated as functions of the doping concentration and its thickness. The obtained results show that the position and the amplitude of the linear and total optical absorption coefficients and the refractive index changes can be modified by varying the doping concentration and its thickness. In addition, it is found that the maximum of the optical absorption can be red-shifted or blue-shifted by varying the doping concentration. The obtained results are important for the design of various electronic components such as high-power FETs and infrared photonic devices.展开更多
Characteristics of a uni-traveling-carrier photodiode （UTC-PD） are investigated. A hydro-dynamic model is introduced which takes into account the electrons＇ velocity overshoot in the depletion region, which is a mo...Characteristics of a uni-traveling-carrier photodiode （UTC-PD） are investigated. A hydro-dynamic model is introduced which takes into account the electrons＇ velocity overshoot in the depletion region, which is a more accurate high speed device than using the normal drift-diffuse model. Based on previous results, two modified UTC-PDs are presented, and an optimized device is obtained, the bandwidth of which is more than twice that of the original.展开更多
文摘A unified breakdown model of SOI RESURF device with uniform,step,or linear drift region doping profile is firstly proposed.By the model,the electric field distribution and breakdown voltage are researched in detail for the step numbers from 0 to infinity.The critic electric field as the function of the geometry parameters and doping profile is derived.For the thick film device,linear doping profile can be replaced by a single or two steps doping profile in the drift region due to a considerable uniformly lateral electric field,almost ideal breakdown voltage,and simplified design and fabrication.The availability of the proposed model is verified by the good accordance among the analytical results,numerical simulations,and reported experiments.
基金supported by the National Natural Science Foundation of China(No.61176071)the Doctoral Fund of Ministry of Education of China(No.20111103120016)the Science and Technology Program of State Grid Corporation of China(No.SGRI-WD-71-13-006)
文摘The addition of a buffer layer can improve the device＇s secondary breakdown voltage, thus, improving the single event burnout （SEB） threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an op- timized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer ~ayer. So the linear buffer layer is more advantageous to improving the device＇s SEB performance.
文摘To overcome short-channel effects （SCEs） in high-performance device applications, a novel structure of CNTFET with a combination of halo and linear doping structure （HL-CNTFET） has been proposed. It has been theoretically investigated by a quantum kinetic model, which is based on two-dimensional non-equilibrium Green＇s functions solved self-consistently with Poisson＇s equations. We have studied the effect of halo doping and linear doping structure on static and dynamical performances of HL-CNTFET. It is demonstrated that a halo doping structure can decrease the drain leakage current and improve the on/off current ratio, and that linear doping can improve high-frequency and switching performance.
基金Project supported partially by the National Natural Science Foundation of China (Grant Nos. 60906038 and 61076082)
文摘Based on the theoretical and experimental investigation of a thin silicon layer（TSL） with linear variable doping（LVD） and further research on the TSL LVD with a multiple step field plate（MSFP）,a breakdown voltage（BV） model is proposed and experimentally verified in this paper.With the two-dimensional Poisson equation of the silicon on insulator（SOI） device,the lateral electric field in drift region of the thin silicon layer is assumed to be constant.For the SOI device with LVD in the thin silicon layer,the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field（ENDIF）,from which the reduced surface field（RESURF） condition is deduced.The drain in the centre of the device has a good self-isolation effect,but the problem of the high voltage interconnection（HVI） line will become serious.The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device.Based on this model,the TSL LVD SOI n-channel lateral double-diffused MOSFET（nLDMOS） with MSFP is realized.The experimental breakdown voltage（BV） and specific on-resistance（R on,sp） of the TSL LVD SOI device are 694 V and 21.3 ·mm 2 with a drift region length of 60 μm,buried oxide layer of 3 μm,and silicon layer of 0.15 μm,respectively.
基金Supported by the Deanship of Scientific Research of University of Dammam under Grant No 2015134
文摘In the framework of effective mass approximation, we theoretically investigate the electronic structure of the Si δ-doped InAIN/GaN single quantum well by solving numerically the coupled equations Schrodinger-Poisson self-consistently. The linear, nonlinear optical absorption coefficients and relative refractive index changes are calculated as functions of the doping concentration and its thickness. The obtained results show that the position and the amplitude of the linear and total optical absorption coefficients and the refractive index changes can be modified by varying the doping concentration and its thickness. In addition, it is found that the maximum of the optical absorption can be red-shifted or blue-shifted by varying the doping concentration. The obtained results are important for the design of various electronic components such as high-power FETs and infrared photonic devices.
基金Project supported by the National Natural Science Foundation of China(No.60736002)the National High Technology Research and Development Program of China(No.2007AA03Z408)
文摘Characteristics of a uni-traveling-carrier photodiode （UTC-PD） are investigated. A hydro-dynamic model is introduced which takes into account the electrons＇ velocity overshoot in the depletion region, which is a more accurate high speed device than using the normal drift-diffuse model. Based on previous results, two modified UTC-PDs are presented, and an optimized device is obtained, the bandwidth of which is more than twice that of the original.
