期刊文献+

Structure optimization of a uni-traveling-carrier photodiode with introduction of a hydro-dynamic model

Structure optimization of a uni-traveling-carrier photodiode with introduction of a hydro-dynamic model
原文传递
导出
摘要 Characteristics of a uni-traveling-carrier photodiode (UTC-PD) are investigated. A hydro-dynamic model is introduced which takes into account the electrons' velocity overshoot in the depletion region, which is a more accurate high speed device than using the normal drift-diffuse model. Based on previous results, two modified UTC-PDs are presented, and an optimized device is obtained, the bandwidth of which is more than twice that of the original. Characteristics of a uni-traveling-carrier photodiode (UTC-PD) are investigated. A hydro-dynamic model is introduced which takes into account the electrons' velocity overshoot in the depletion region, which is a more accurate high speed device than using the normal drift-diffuse model. Based on previous results, two modified UTC-PDs are presented, and an optimized device is obtained, the bandwidth of which is more than twice that of the original.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第10期38-42,共5页 半导体学报(英文版)
基金 Project supported by the National Natural Science Foundation of China(No.60736002) the National High Technology Research and Development Program of China(No.2007AA03Z408)
关键词 UTC-PD hydro dynamic model linear doping linear band-gap UTC-PD hydro dynamic model linear doping linear band-gap
  • 相关文献

参考文献14

  • 1Ishibashi T, Kodama S, Shimizu N, et al. High-speed response of uni-traveling-carrier photodiodes. Jpn J Appl Phys, 1997, 36: 6263.
  • 2Ito H, Furuta T, Kodama S, et al. InP/InGaAs uni-traveling-carrier photodiode with 220 GHz bandwidth. Electron Lett, 1999, 35(18): 1556.
  • 3Ito H, Kodama S, Muramoto Y, et al. High-speed and high output InP-InGaAs unitraveling-carrier photodiodes. IEEE J Sel Topics Quantum Electron, 2004, 10(4): 709.
  • 4Beling A, Pan H, Chen H, et al. Measurement and modeling of a high-linearity modified uni-traveling carrier photodiode. IEEE Photonics Technol Lett, 2008, 20(14): 1219.
  • 5Ito H, Turuta T, Kodama S, et al. InP/InGaAs uni-travellingcarrier photodiode with 310 GHz bandwidth. Electron Lett, 2000, 36(21): 1809.
  • 6Shi J W, Wu Y S, Lin Y S. Near-ballistic uni-traveling-carrier photodiode based V-band optoelectronic mixers with internal upconversion-gain, wide modulation bandwidth, and very high operation current performance. IEEE Photonics Technol Lett, 2008, 20(11): 939.
  • 7Banik B, Vukusic J, Hjelmgren H, et al. Optimization of the UTC- PD epitaxy for photomixing at 340 GHz. Int J Infrared Milli Waves, 2008, 29(1a0): 914.
  • 8Rahman S M M, Hjelmgen H, Vukusic J, et al. Hydrodynamic simulations ofunitraveling-carrier photodiodes. IEEE J Quantum Electron, 2007, 43(11): 1088.
  • 9Ishibashi T, Furuta T, Fushimi H, et al. InP/InGaAs uni-travelingcarrier photodiodes. IEICE Trans Electron, 2000, E83-C(6): 938.
  • 10Li Xiaojian, Zhang Yejin, Li Guoyu, et al. An equivalent circuit model for uni-traveling-carrier photodiode. Journal of China Universities of Posts and Telecommunications, 2009, 16(1): 40.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部