A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit ...A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.展开更多
Emerging two-dimensional(2D)semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level thickness.As the stacking process advances,the complexity and cost of ...Emerging two-dimensional(2D)semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level thickness.As the stacking process advances,the complexity and cost of nanosheet field-effect transistors(NSFETs)and complementary FET(CFET)continue to rise.The 1 nm technology node is going to be based on Si-CFET process according to international roadmap for devices and systems(IRDS)(2022,https://irds.ieee.org/),but not publicly confirmed,indicating that more possibilities still exist.The miniaturization advantage of 2D semiconductors motivates us to explore their potential for reducing process costs while matching the performance of next-generation nodes in terms of area,power consumption and speed.In this study,a comprehensive framework is built.A set of MoS2 NSFETs were designed and fabricated to extract the key parameters and performances.And then for benchmarking,the sizes of 2D-NSFET are scaled to a extent that both of the Si-CFET and 2D-NSFET have the same average device footprint.Under these conditions,the frequency of ultra-scaled 2D-NSFET is found to improve by 36%at a fixed power consumption.This work verifies the feasibility of replacing silicon-based CFETs of 1 nm node with 2D-NSFETs and proposes a 2D technology solution for 1 nm nodes,i.e.,“2D eq 1 nm”nodes.At the same time,thanks to the lower characteristic length of 2D semiconductors,the miniaturized 2D-NSFET achieves a 28%frequency increase at a fixed power consumption.Further,developing a standard cell library,these devices obtain a similar trend in 16-bit RISC-V CPUs.This work quantifies and highlights the advantages of 2D semiconductors in advanced nodes,offering new possibilities for the application of 2D semiconductors in high-speed and low-power integrated circuits.展开更多
Metal-oxide-semiconductor field effect transistor(MOSFET) intrinsic gain degradation caused by channel length modulation(CLM) effect is examined.A simplified model based on Berkeley short-channel insulator-gate field ...Metal-oxide-semiconductor field effect transistor(MOSFET) intrinsic gain degradation caused by channel length modulation(CLM) effect is examined.A simplified model based on Berkeley short-channel insulator-gate field effect transistor model version 4(BSIM4) current expression for sub-100 nm MOSFET intrinsic gain is deduced,which only needs a few technology parameters.With this transistor intrinsic gain model,complementary metal-oxide-semiconductor(CMOS) operational amplifier(op amp) DC gain could be predicted.A two-stage folded cascode op amp is used as an example in this work.Non-minimum length device is used to improve the op amp DC gain.An improvement of 20 dB is proved when using doubled channel length design.Optimizing transistor bias condition and using advanced technology with thinner gate dielectric thickness and shallower source/drain junction depth can also increase the op amp DC gain.After these,a full op amp DC gain scaling roadmap is proposed,from 130 nm technology node to 32 nm technology node.Five scaled op amps are built and their DC gains in simulation roll down from 69.6 to 41.1 dB.Simulation shows transistors biased at higher source-drain voltage will have more impact on the op amp DC gain scaling over technology.The prediction based on our simplified gain model agrees with SPICE simulation results.展开更多
综述了储能技术的分类框架与性能特征,重点分析机械储能、电化学储能及电磁储能等技术类型的核心参数与应用局限。机械储能以抽水蓄能、压缩空气储能和飞轮储能为代表,在规模成本、能量密度及响应速度上形成差异化优势;电化学储能涵盖...综述了储能技术的分类框架与性能特征,重点分析机械储能、电化学储能及电磁储能等技术类型的核心参数与应用局限。机械储能以抽水蓄能、压缩空气储能和飞轮储能为代表,在规模成本、能量密度及响应速度上形成差异化优势;电化学储能涵盖锂离子电池、钠硫电池、全钒液流电池等技术路线,在能量密度、安全性及循环寿命方面呈现此消彼长的特性;电磁储能则通过超导磁储能与超级电容器实现极端工况下的瞬时功率支撑。研究进一步提出混合储能系统(Hybrid Energy Storage System,HESS)的协同设计理念,通过锂离子电池-超级电容、磷酸铁锂-全钒液流、飞轮-压缩空气等组合方案,突破单一技术性能边界,在可再生能源并网、电网调频及工业能量回收场景中展现显著价值;结合混合储能系统多层级控制算法对比分析,通过分频控制与智能优化协同平抑新能源波动,显著提升系统稳定性并降低经济成本。展开更多
Normal-pressure shale gas is an important object of shale gas reserves and production increasewith broad resource prospects in China,but its large-scale benefit development is still confronted with technical bottlenec...Normal-pressure shale gas is an important object of shale gas reserves and production increasewith broad resource prospects in China,but its large-scale benefit development is still confronted with technical bottlenecks.To promote the large-scale benefit development of normal-pressure shale gas,this paper systematically sorts out and summarizes the research achievements and technological progresses related to normal-pressure shale gas from the aspects of accumulation mechanism,enrichment theory,percolation mechanism,development technology,and low-cost engineering technology,and points out the difficulties and challenges to the benefit development of normal-pressure shale gas in the complex structure zones of southern China,by taking the shale gas in the Southeast Chongqing Area of the Sichuan Basin as the research object.In addition,the research direction of normal-pressure shale gas exploration and development is discussed in terms of sweet spot selection,development technology policy,low-cost drilling technology and high-efficiency fracturing technology.And the following research results are obtained.First,the accumulation mechanism of normal-pressure shale gas is clarified from the perspective of geological exploration theory;the hydrocarbon accumulation model of generation,expulsion,retention and accumulation is established;the enrichment theory of“three-factor controlling reservoir”is put forward;and the comprehensive sweetspot target evaluation system is formed.Second,as for development technology,the development technology policies of“multiple series of strata,variable well spacing,long horizontal section,small included angle,low elevation difference,strong stimulation and pressure difference controlling”are formulated.Third,as for drilling engineering,the optimal fast drilling and completion technology with“secondary structureþradical parameterþintegrated guidanceþunpressured leak-proof cementing”as the core is formed.Fourth,as for fracturing engineering,the low-cost and high-efficiency fracturing technology with“multi-cluster small-stageþlimited-entry perforatingþdouble temporary blockingþhigh-intensity sand injectionþfully electric”as the core is formed.Fifth,normal-pressure shale gas is characterized by complex geological conditions,low pressure coefficient and gas content,poor resource endowment and so on,but its resource utilization still faces a series of challenges,such as uncertain productivity construction positions,low single-well productivity and ultimate recoverable reserve,high investment cost and poor economic benefit.In conclusion,the key research directions to realize the large-scale benefit development of low-grade normal-pressure shale gas are to deepen the research on the enrichment and high yield mechanism and sweet spot selection of normal-pressure shale gas,strengthen the research on the benefit development technology policy based on percolation mechanism and the key technologies for low-cost drilling,accelerate the research and devel-opment of the key technologies for low-cost and high-efficiency fracturing,and implement cost reduction and efficiency improvement continuously.展开更多
Evaluation of a Commercially Available Radiochromic Film for Use as a Complementary Dosimeter for Rapid In-field Low Photon Equivalent Radiation Dose (≤50 mSv) Monitoring Nicky Nivi1, Helen Moise1,2, Ana Pejovic'...Evaluation of a Commercially Available Radiochromic Film for Use as a Complementary Dosimeter for Rapid In-field Low Photon Equivalent Radiation Dose (≤50 mSv) Monitoring Nicky Nivi1, Helen Moise1,2, Ana Pejovic'-Milic'1(1. Department of Physics, Toronto Metropolitan University, 350 Victoria Street, Toronto, Ontario, M5B 2K3;2. Autonomous and Radiological Technologies Section, Defense Research and Development Canada, PO Box 4000 Stn Main,Medicine Hat, Alberta, T1A 8K6).展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60536030,61036002,60776024,60877035 and 61036009)National High Technology Research and Development Program of China(Grant Nos.2007AA04Z329 and 2007AA04Z254)
文摘A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.
基金supported in part by STI 2030-Major Projects under Grant 2022ZD0209200in part by Beijing Natural Science Foundation-Xiaomi Innovation Joint Fund(L233009)+4 种基金in part by National Natural Science Foundation of China under Grant No.62374099in part by the Tsinghua-Toyota Joint Research Fundin part by the Daikin Tsinghua Union Programin part by Independent Research Program of School of Integrated Circuits,Tsinghua UniversityThis work was also sponsored by CIE-Tencent Robotics X Rhino-Bird Focused Research Program.
文摘Emerging two-dimensional(2D)semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level thickness.As the stacking process advances,the complexity and cost of nanosheet field-effect transistors(NSFETs)and complementary FET(CFET)continue to rise.The 1 nm technology node is going to be based on Si-CFET process according to international roadmap for devices and systems(IRDS)(2022,https://irds.ieee.org/),but not publicly confirmed,indicating that more possibilities still exist.The miniaturization advantage of 2D semiconductors motivates us to explore their potential for reducing process costs while matching the performance of next-generation nodes in terms of area,power consumption and speed.In this study,a comprehensive framework is built.A set of MoS2 NSFETs were designed and fabricated to extract the key parameters and performances.And then for benchmarking,the sizes of 2D-NSFET are scaled to a extent that both of the Si-CFET and 2D-NSFET have the same average device footprint.Under these conditions,the frequency of ultra-scaled 2D-NSFET is found to improve by 36%at a fixed power consumption.This work verifies the feasibility of replacing silicon-based CFETs of 1 nm node with 2D-NSFETs and proposes a 2D technology solution for 1 nm nodes,i.e.,“2D eq 1 nm”nodes.At the same time,thanks to the lower characteristic length of 2D semiconductors,the miniaturized 2D-NSFET achieves a 28%frequency increase at a fixed power consumption.Further,developing a standard cell library,these devices obtain a similar trend in 16-bit RISC-V CPUs.This work quantifies and highlights the advantages of 2D semiconductors in advanced nodes,offering new possibilities for the application of 2D semiconductors in high-speed and low-power integrated circuits.
文摘Metal-oxide-semiconductor field effect transistor(MOSFET) intrinsic gain degradation caused by channel length modulation(CLM) effect is examined.A simplified model based on Berkeley short-channel insulator-gate field effect transistor model version 4(BSIM4) current expression for sub-100 nm MOSFET intrinsic gain is deduced,which only needs a few technology parameters.With this transistor intrinsic gain model,complementary metal-oxide-semiconductor(CMOS) operational amplifier(op amp) DC gain could be predicted.A two-stage folded cascode op amp is used as an example in this work.Non-minimum length device is used to improve the op amp DC gain.An improvement of 20 dB is proved when using doubled channel length design.Optimizing transistor bias condition and using advanced technology with thinner gate dielectric thickness and shallower source/drain junction depth can also increase the op amp DC gain.After these,a full op amp DC gain scaling roadmap is proposed,from 130 nm technology node to 32 nm technology node.Five scaled op amps are built and their DC gains in simulation roll down from 69.6 to 41.1 dB.Simulation shows transistors biased at higher source-drain voltage will have more impact on the op amp DC gain scaling over technology.The prediction based on our simplified gain model agrees with SPICE simulation results.
文摘微通道板行波选通分幅相机常用于惯性约束聚变,存在体积庞大和非单视线成像等问题,可以采用互补金属氧化物半导体(complementary metal oxide semiconductor,CMOS)图像传感器(CMOS image sensor,CIS)替代微通道板变像管的方式来解决这些问题.基于0.18µm标准CMOS工艺,提出一种8×8像素阵列的CMOS图像传感器设计方案.通过设计超短快门像素电路和快门信号控制电路,实现单次4分幅成像,并采用基于单端放大器的相关双采样电路消除噪声.仿真结果表明,该电路功能正常,4幅图像像素信号均匀性优于99%,每幅图像时间分辨率为100 ps,画幅时间间隔为300 ps.
文摘综述了储能技术的分类框架与性能特征,重点分析机械储能、电化学储能及电磁储能等技术类型的核心参数与应用局限。机械储能以抽水蓄能、压缩空气储能和飞轮储能为代表,在规模成本、能量密度及响应速度上形成差异化优势;电化学储能涵盖锂离子电池、钠硫电池、全钒液流电池等技术路线,在能量密度、安全性及循环寿命方面呈现此消彼长的特性;电磁储能则通过超导磁储能与超级电容器实现极端工况下的瞬时功率支撑。研究进一步提出混合储能系统(Hybrid Energy Storage System,HESS)的协同设计理念,通过锂离子电池-超级电容、磷酸铁锂-全钒液流、飞轮-压缩空气等组合方案,突破单一技术性能边界,在可再生能源并网、电网调频及工业能量回收场景中展现显著价值;结合混合储能系统多层级控制算法对比分析,通过分频控制与智能优化协同平抑新能源波动,显著提升系统稳定性并降低经济成本。
基金supported by the National Science and Technology Major Project of China"Demonstrative project of normal-pressure shale gas exploration and development in the Pengshui area"(No.2016ZX05061)the Sinopec Scientific Research Projects"Evaluation of normal-pressure shale gas enrichment and production mechanisms and targets in Nan-chuan-Wulong"(No.P21087-6)"Evaluation of shale gas enrichment and targets in the East China exploration area in Sichuan Basin and its periphery"(No.P20059-6).
文摘Normal-pressure shale gas is an important object of shale gas reserves and production increasewith broad resource prospects in China,but its large-scale benefit development is still confronted with technical bottlenecks.To promote the large-scale benefit development of normal-pressure shale gas,this paper systematically sorts out and summarizes the research achievements and technological progresses related to normal-pressure shale gas from the aspects of accumulation mechanism,enrichment theory,percolation mechanism,development technology,and low-cost engineering technology,and points out the difficulties and challenges to the benefit development of normal-pressure shale gas in the complex structure zones of southern China,by taking the shale gas in the Southeast Chongqing Area of the Sichuan Basin as the research object.In addition,the research direction of normal-pressure shale gas exploration and development is discussed in terms of sweet spot selection,development technology policy,low-cost drilling technology and high-efficiency fracturing technology.And the following research results are obtained.First,the accumulation mechanism of normal-pressure shale gas is clarified from the perspective of geological exploration theory;the hydrocarbon accumulation model of generation,expulsion,retention and accumulation is established;the enrichment theory of“three-factor controlling reservoir”is put forward;and the comprehensive sweetspot target evaluation system is formed.Second,as for development technology,the development technology policies of“multiple series of strata,variable well spacing,long horizontal section,small included angle,low elevation difference,strong stimulation and pressure difference controlling”are formulated.Third,as for drilling engineering,the optimal fast drilling and completion technology with“secondary structureþradical parameterþintegrated guidanceþunpressured leak-proof cementing”as the core is formed.Fourth,as for fracturing engineering,the low-cost and high-efficiency fracturing technology with“multi-cluster small-stageþlimited-entry perforatingþdouble temporary blockingþhigh-intensity sand injectionþfully electric”as the core is formed.Fifth,normal-pressure shale gas is characterized by complex geological conditions,low pressure coefficient and gas content,poor resource endowment and so on,but its resource utilization still faces a series of challenges,such as uncertain productivity construction positions,low single-well productivity and ultimate recoverable reserve,high investment cost and poor economic benefit.In conclusion,the key research directions to realize the large-scale benefit development of low-grade normal-pressure shale gas are to deepen the research on the enrichment and high yield mechanism and sweet spot selection of normal-pressure shale gas,strengthen the research on the benefit development technology policy based on percolation mechanism and the key technologies for low-cost drilling,accelerate the research and devel-opment of the key technologies for low-cost and high-efficiency fracturing,and implement cost reduction and efficiency improvement continuously.
文摘Evaluation of a Commercially Available Radiochromic Film for Use as a Complementary Dosimeter for Rapid In-field Low Photon Equivalent Radiation Dose (≤50 mSv) Monitoring Nicky Nivi1, Helen Moise1,2, Ana Pejovic'-Milic'1(1. Department of Physics, Toronto Metropolitan University, 350 Victoria Street, Toronto, Ontario, M5B 2K3;2. Autonomous and Radiological Technologies Section, Defense Research and Development Canada, PO Box 4000 Stn Main,Medicine Hat, Alberta, T1A 8K6).
