This paper analyzes the characteristic of matching efficiency between the fundamental mode of two kinds of optical waveguides and its Gaussian approximate field.Then, it presents a new method where the mode-field half...This paper analyzes the characteristic of matching efficiency between the fundamental mode of two kinds of optical waveguides and its Gaussian approximate field.Then, it presents a new method where the mode-field half-width of Caussian approximation for the fundamental mode should be defined according to the maximal matching efficiency method. The relationship between the mode-field half-width of the Gaussian approximate field obtained from the maximal matching efficiency and normalized frequency is studied; furthermore, two formulas of mode-field half-widths as a function of normalized frequency are proposed.展开更多
Low temperature photoluminescence （PL） measurements have been performed for a set of GaN/AlxGal xN quantum wells （QWs）. The experimental results show that the optical full width at half maximum （FWHM） increases ...Low temperature photoluminescence （PL） measurements have been performed for a set of GaN/AlxGal xN quantum wells （QWs）. The experimental results show that the optical full width at half maximum （FWHM） increases relatively rapidly with increasing A1 composition in the AlxGal xN barrier, and increases only slightly with increasing GaN well width. A model considering the interface roughness is used to interpret the experimental results. In the model, the FWHM＇s broadening caused by the interface roughness is calculated based on the triangle potential well approximation. We find that the calculated results accord with the experimental results well.展开更多
基金Project supported by Natural Science Foundation of the Department of Science & Technology of Fujian Province of China (GrantNo 2007F5040)
文摘This paper analyzes the characteristic of matching efficiency between the fundamental mode of two kinds of optical waveguides and its Gaussian approximate field.Then, it presents a new method where the mode-field half-width of Caussian approximation for the fundamental mode should be defined according to the maximal matching efficiency method. The relationship between the mode-field half-width of the Gaussian approximate field obtained from the maximal matching efficiency and normalized frequency is studied; furthermore, two formulas of mode-field half-widths as a function of normalized frequency are proposed.
基金supported by the National Basic Research Program of China(Grant No.2012CB619306)the National High Technology Research and Development Program of China(Grant No.2011AA03A101)
文摘Low temperature photoluminescence （PL） measurements have been performed for a set of GaN/AlxGal xN quantum wells （QWs）. The experimental results show that the optical full width at half maximum （FWHM） increases relatively rapidly with increasing A1 composition in the AlxGal xN barrier, and increases only slightly with increasing GaN well width. A model considering the interface roughness is used to interpret the experimental results. In the model, the FWHM＇s broadening caused by the interface roughness is calculated based on the triangle potential well approximation. We find that the calculated results accord with the experimental results well.
