期刊文献+
共找到222篇文章
< 1 2 12 >
每页显示 20 50 100
Excitation of defect modes from the extended photonic band-gap structures of 1D photonic lattices 被引量:2
1
作者 周可雅 郭忠义 +1 位作者 Muhammad Ashfaq Ahmad 刘树田 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第1期284-288,共5页
This paper stuides numerically the model equation in a one dimensional defective photonic lattice by modifying the potential function to a periodic function. It is found that defect modes (DMs) can be regarded as Bl... This paper stuides numerically the model equation in a one dimensional defective photonic lattice by modifying the potential function to a periodic function. It is found that defect modes (DMs) can be regarded as Bloch modes which are excited from the extended photonie band-gap structure at Bloch wave-numbers with kx = 0. The DMs for both positive and negative defects are considered in this method. 展开更多
关键词 optical-induced photonic lattices photonic band-gaps defect modes
原文传递
Surface defect gap solitons in two-dimensional optical lattices
2
作者 孟云吉 刘友文 唐宇煌 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第7期314-319,共6页
We investigate the existence and stability of surface defect gap solitons at an interface between a defect in a two-dimensional optical lattice and a uniform saturable Kerr nonlinear medium. The surface defect embedde... We investigate the existence and stability of surface defect gap solitons at an interface between a defect in a two-dimensional optical lattice and a uniform saturable Kerr nonlinear medium. The surface defect embedded in the two-dimensional optical lattice gives rise to some unique properties. It is interestingly found that for the negative defect, stable surface defect gap solitons can exist both in the semi-infinite gap and in the first gap. The deeper the negative defect, the narrower the stable region in the semi-infinite gap will be. For a positive defect, the surface defect gap solitons exist only in the semi-infinite gap and the stable region localizes in a low power region. 展开更多
关键词 surface defect gap soliton optical lattice saturable Kerr nonlinear media
原文传递
Surface defect gap solitons in one-dimensional dual-frequency lattices
3
作者 朱伟玲 罗莉 +1 位作者 何影记 汪河洲 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第10期4319-4325,共7页
We study the surface defect gap solitons in an interface between a defect of one-dimensional dual-frequency lattices and the uniform media. Some unique properties are revealed that such lattices can broaden the region... We study the surface defect gap solitons in an interface between a defect of one-dimensional dual-frequency lattices and the uniform media. Some unique properties are revealed that such lattices can broaden the region of semi-finite gap, and the semi-finite gap exists not only in the positive and zero defects but also in the negative defect; unlike in the regular lattices, the semi-finite gap exists in the positive and zero defects but does not exist in the negative defect. In particular, stable solitons exist almost in the whole semi-finite gap for the positive and zero defects. These properties are different from other lattices with defects. In addition, it is found that the existence of surface dual-frequency lattice solitons does not need a threshold power. 展开更多
关键词 dual-frequency lattices surface defect gap solitons
原文传递
Dynamic Control of Defective Gap Mode Through Defect Location
4
作者 苌磊 李应红 +3 位作者 吴云 张辉洁 王卫民 宋慧敏 《Plasma Science and Technology》 SCIE EI CAS CSCD 2016年第1期1-5,共5页
A one dimensional model is developed for defective gap mode(DGM)with two types of boundary conditions:conducting mesh and conducting sleeve.For a periodically modulated system without defect,the normalized width of... A one dimensional model is developed for defective gap mode(DGM)with two types of boundary conditions:conducting mesh and conducting sleeve.For a periodically modulated system without defect,the normalized width of spectral gaps equals to the modulation factor,which is consistent with previous studies.For a periodic system with local defects introduced by the boundary conditions,it shows that the conducting-mesh-induced DGM is always well confined by spectral gaps while the conducting-sleeve-induced DGM is not.The defect location can be a useful tool to dynamically control the frequency and spatial periodicity of DGM inside spectral gaps.This controllability can be potentially applied to the interaction between gap eigenmodes and energetic particles in fusion plasmas,and optical microcavities and waveguides in photonic crystals. 展开更多
关键词 defective gap mode boundary condition dynamic control analytical model
在线阅读 下载PDF
Repair of peripheral nerve defects by nerve transposition using small gap bio-sleeve suture with different inner diameters at both ends 被引量:1
5
作者 Yu-Hui Kou You-Lai Yu +7 位作者 Ya-Jun Zhang Na Han Xiao-Feng Yin Yu-Song Yuan Fei Yu Dian-Ying Zhang Pei-Xun Zhang Bao-Guo Jiang 《Neural Regeneration Research》 SCIE CAS CSCD 2019年第4期706-712,共7页
During peripheral nerve transposition repair, if the diameter difference between transposed nerves is large or multiple distal nerves must be repaired at the same time, traditional epineurial neurorrhaphy has the prob... During peripheral nerve transposition repair, if the diameter difference between transposed nerves is large or multiple distal nerves must be repaired at the same time, traditional epineurial neurorrhaphy has the problem of high tension at the suture site, which may even lead to the failure of nerve suture. We investigated whether a small gap bio-sleeve suture with different inner diameters at both ends can be used to repair a 2-mm tibial nerve defect by proximal transposition of the common peroneal nerve in rats and compared the results with the repair seen after epineurial neurorrhaphy. Three months after surgery, neurological function, nerve regeneration, and recovery of nerve innervation muscle were assessed using the tibial nerve function index, neuroelectrophysiological testing, muscle biomechanics and wet weight measurement, osmic acid staining, and hematoxylin-eosin staining. There was no obvious inflammatory reaction and neuroma formation in the tibial nerve after repair by the small gap bio-sleeve suture with different inner diameters at both ends. The conduction velocity, muscle strength, wet muscle weight, cross-sectional area of muscle fibers, and the number of new myelinated nerve fibers in the biosleeve suture group were similar to those in the epineurial neurorrhaphy group. Our findings indicate that small gap bio-sleeve suture with different inner diameters at both ends can achieve surgical suture between nerves of different diameters and promote regeneration and functional recovery of injured peripheral nerves. 展开更多
关键词 NERVE REGENERATION bio-sleeve small gap SLEEVE SUTURE NERVE TRANSPOSITION NERVE defect NERVE conduit NERVE reinnervation peripheral NERVE neural REGENERATION
暂未订购
Influence of defect states on band gaps in the two-dimensional phononic crystal of 4340 steel in an epoxy
6
作者 孔肖燕 岳蕾蕾 +1 位作者 陈雨 刘应开 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第9期400-403,共4页
The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section in an epoxy resin were studied by the plane-wave expansion and supercell calculation method. ... The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section in an epoxy resin were studied by the plane-wave expansion and supercell calculation method. The band gaps of this type of phononic crystals with different defects were calculated such as defect-free, 60° crystal linear defect states, 120° crystal linear defect states, and 180° crystal linear defect states. It was found that the band gap will emerge in different linear defects of the phononic crystals and the bandwidth of linear defect states is larger than that of the free-defect crystal by about 2.14 times within the filling fraction F = 0.1-0.85. In addition, the influence of the filling fraction on the relative width of the minimum band gap is discussed. 展开更多
关键词 defect state band width number of band gap
原文传递
Influence of Defect Density, Band Gap Discontinuity and Electron Mobility on the Performance of Perovskite Solar Cells
7
作者 Issiaka Sankara Soumaïla Ouédraogo +4 位作者 Daouda Oubda Boureima Traoré Marcel Bawindsom Kébré Adama Zongo François Zougmoré 《Advances in Materials Physics and Chemistry》 2023年第8期151-160,共10页
In this manuscript, we used the SCAPS-1D software to perform numerical simulations on a perovskite solar cell. These simulations were used to study the influence of certain parameters on the electrical behavior of the... In this manuscript, we used the SCAPS-1D software to perform numerical simulations on a perovskite solar cell. These simulations were used to study the influence of certain parameters on the electrical behavior of the cell. We have shown in this study that electron mobility is strongly influenced by the thickness of the absorber, since electron velocity is reduced by thickness. The influence of the defect density shows that above 10<sup>16</sup> cm<sup>-3</sup> all the electrical parameters are affected by the defects. The band discontinuity at the interface generally plays a crucial role in the charge transport phenomenon. The importance of this study is to enable the development of good quality perovskite solar cells, while taking into account the parameters that limit solar cell performance. 展开更多
关键词 defect Density Electron Mobility Band gap PEROVSKITE SCAPS-1D Software
在线阅读 下载PDF
纳米GaP材料Ga填隙缺陷的EPR实验观察 被引量:2
8
作者 张兆春 邹陆军 崔得良 《波谱学杂志》 CAS CSCD 北大核心 2003年第4期335-342,共8页
利用电子顺磁共振 (EPR)技术对纳米GaP粉体材料的本征点缺陷进行了研究 ,结果表明 :由EPR信息的 g因子值 ( 2 .0 0 2 7± 0 .0 0 0 4 )可以确定纳米GaP粉体材料存在Ga自填隙(Gai)本征缺陷 ;纳米GaP粉体EPR信号超精细结构消失 ,以及... 利用电子顺磁共振 (EPR)技术对纳米GaP粉体材料的本征点缺陷进行了研究 ,结果表明 :由EPR信息的 g因子值 ( 2 .0 0 2 7± 0 .0 0 0 4 )可以确定纳米GaP粉体材料存在Ga自填隙(Gai)本征缺陷 ;纳米GaP粉体EPR信号超精细结构消失 ,以及谱线线宽 (ΔHPP)变窄等实验现象 ,可能是由纳米材料界面的无序性 ,以及缺陷原子和界面原子之间的电子交换造成的 ;在较低的测试温度范围内 ,升高温度引起纳米GaP材料发生晶界结构弛豫 ;当测试温度由1 0 0K升高至 42 3K时 。 展开更多
关键词 电子顺磁共振技术 纳米材料 磷化镓 点缺陷 谱线线宽 超精细结构 晶界结构弛豫 半导体材料
在线阅读 下载PDF
基于红外热成像的钢管混凝土脱空缺陷检测研究 被引量:1
9
作者 何健 张佶 +4 位作者 王航 钱娟 邵志伟 戴爽 查晓雄 《建筑钢结构进展》 北大核心 2025年第7期73-80,共8页
钢管混凝土(concrete-filled steel tubular,CFST)构件在施工过程中,会因施工人员操作不当、混凝土发生收缩等原因使其内部产生不密实缺陷,其中脱空缺陷会削弱钢管与混凝土之间的相互作用,导致构件承载力下降。因此有必要加强对CFST构... 钢管混凝土(concrete-filled steel tubular,CFST)构件在施工过程中,会因施工人员操作不当、混凝土发生收缩等原因使其内部产生不密实缺陷,其中脱空缺陷会削弱钢管与混凝土之间的相互作用,导致构件承载力下降。因此有必要加强对CFST构件脱空缺陷的检测。本文提出了一种基于红外热成像法对CFST进行脱空缺陷检测的方法,相关理论研究表明:当结构存在缺陷或损伤时,该结构的热物理特性会发生变化,体现为物体表面局部温度发生异常。进行红外热成像法检测CFST脱空缺陷试验研究,结果表明红外热成像技术能够有效检测CFST脱空缺陷,该缺陷判断指标分别为:试件加热后的温度差为3℃及监测范围内降温速率比大于1.1。 展开更多
关键词 钢管混凝土 红外热成像 脱空缺陷 无损检测 降温速率
原文传递
考虑气隙缺陷与介电功能梯度材料的GIS盆式绝缘子电场特性研究 被引量:1
10
作者 吴彦亨 罗艳 +1 位作者 马鹏欢 张琴琴 《绝缘材料》 北大核心 2025年第1期91-96,共6页
气隙缺陷是GIS盆式绝缘子内部常见的缺陷之一,气隙会引起电场畸变,而介电功能梯度材料的引入可以优化盆式绝缘子的局部电场,但在气隙缺陷与介电功能梯度材料共同作用下,其电场特性尚未可知。因此,本文建立具有均匀介质和介电功能梯度材... 气隙缺陷是GIS盆式绝缘子内部常见的缺陷之一,气隙会引起电场畸变,而介电功能梯度材料的引入可以优化盆式绝缘子的局部电场,但在气隙缺陷与介电功能梯度材料共同作用下,其电场特性尚未可知。因此,本文建立具有均匀介质和介电功能梯度材料(ε-FGM)的GIS盆式绝缘子电场仿真模型,讨论气隙的存在及气隙位置对于均匀介质和ε-FGM盆式绝缘子电场分布的影响。结果表明:引入的介电功能梯度材料的调控效果较为理想。当均匀介质盆式绝缘子中掺杂气隙时,靠近高压导体、绝缘子中部、靠近接地外壳3个气隙位置的场强均有明显的增加,电场增加率分别为85.32%、78.10%和68.69%。气隙缺陷对ε-FGM盆式绝缘子电场特性影响趋势基本和对均匀介质盆式绝缘子的影响趋势一致,但从具体数值上看,气隙缺陷对ε-FGM盆式绝缘子电场特性影响与对均匀介质盆式绝缘子的影响仍有一定的差异性。气隙缺陷对于介电功能梯度材料绝缘子电场值的影响更大,在设计介电功能梯度材料绝缘子时,应尤其注意对介质中气隙缺陷的抑制。 展开更多
关键词 气隙缺陷 GIS盆式绝缘子 介电常数 功能梯度材料 有限元方法 电场特性
在线阅读 下载PDF
GaP的缺陷随温度变化的PAT研究
11
作者 张福甲 张苗 张旭 《发光学报》 EI CAS CSCD 北大核心 1996年第2期143-147,共5页
我们对LEC法制成的掺S的GaP单晶,从室温至1000℃,每隔50℃恒温30分钟,在Ar气保护下进行热处理.用正电子湮没技术(PAT)对样品中的缺陷进行了分析研究.结果指出,随着热处理温度的升高,GaP中的点缺陷组态... 我们对LEC法制成的掺S的GaP单晶,从室温至1000℃,每隔50℃恒温30分钟,在Ar气保护下进行热处理.用正电子湮没技术(PAT)对样品中的缺陷进行了分析研究.结果指出,随着热处理温度的升高,GaP中的点缺陷组态发生变化.测试结果表明,正电子湮没寿命可分解为两个寿命.其中捕获态寿命τ2随热处理温度的升高,由310ps变为330ps;进而在高温下变为280ps.相应地捕获强度I2随温度而发生变化,它反映出GaP单晶中的空位浓度也在随温度发生变化. 展开更多
关键词 缺陷 正电子寿命 磷化镓
在线阅读 下载PDF
GaP中反位缺陷的电子结构
12
作者 申三国 《郑州大学学报(自然科学版)》 CAS 1994年第3期52-55,共4页
本文利用紧束缚的格林函数方法,确定了Gap中P_(Ga)反位缺陷的波函数为深能级E的函数。理论给出反位原子上的超精细相互作用常数,同实验符合得很好,定性说明了GaP中P_(Ga)反位缺陷的次近邻原子有向外驰豫的趋势。
关键词 半导体 电子结构 磷化镓 反位缺陷
在线阅读 下载PDF
基于光谱诊断的窄间隙激光填丝焊气孔缺陷检测研究 被引量:1
13
作者 佘昆 李冬辉 +3 位作者 杨凯淞 杨立军 刘金平 黄一鸣 《光谱学与光谱分析》 北大核心 2025年第2期507-514,共8页
窄间隙激光焊作为核电领域大型厚壁构件的先进连接工艺,具有热输入小、焊接效率高、接头质量高等优点。然而,受现场复杂施焊环境影响,焊缝内部易因污染物清理不尽而产生气孔缺陷。传统的焊后无损检测费时耗力,且检测结果受零部件尺寸结... 窄间隙激光焊作为核电领域大型厚壁构件的先进连接工艺,具有热输入小、焊接效率高、接头质量高等优点。然而,受现场复杂施焊环境影响,焊缝内部易因污染物清理不尽而产生气孔缺陷。传统的焊后无损检测费时耗力,且检测结果受零部件尺寸结构制约及检测人员主观判断影响,因此亟待发展气孔缺陷在线检测技术。本文设计研制了基于发射光谱的窄间隙激光焊质量检测系统,探究工艺参数及水、油等污染物对气孔缺陷的影响规律,分析水对激光致等离子体电子温度、光谱强度的作用机制,开发因污染物导致的气孔缺陷在线预警软件系统。结果表明,窄间隙激光焊时由于受工件侧壁拘束使得等离子体密度高,对激光反射、散射作用强,测得光谱强度值较弱。窄间隙填丝焊时由于激光能量存在损耗、不能完全被母材和丝材吸收,其测得的光谱强度小于窄间隙自熔焊。采用Boltzmann作图法求得窄间隙激光填丝焊光致等离子体电子温度为7201.1 K,电子密度为5.2797×10^(15)cm^(-3),均小于窄间隙激光自熔焊时的热力学状态参数。在本文的6组自熔焊工艺参数范围内,X射线探伤未检测到密集气孔缺陷。当母材表面有水时,焊缝表面有气孔产生,通过X射线探伤观察到焊缝中有大量密集气孔存在。与正常工艺下获得的光谱数据相比,光谱仪全波段上的相对光强均降低,电子温度也下降至6900~7200 K范围内动态波动,但电子密度会增大。采用神经网络模型对主成分分析降维后的光谱数据进行训练,可对窄间隙激光填丝焊时因水、油等污染物导致的气孔缺陷进行高准确率的预测。开发的气孔检测系统可对因污染物导致的气孔缺陷进行有效识别,准确率达90%,响应时间在0.1 s内。 展开更多
关键词 窄间隙激光焊 光谱诊断 光致等离子体 气孔缺陷 在线检测
在线阅读 下载PDF
厚板窄间隙激光焊接技术研究现状与发展趋势
14
作者 余强明 刘鸿铭 盛仲曦 《电焊机》 2025年第7期1-14,共14页
随着大型厚壁结构件在核能、航空航天等关键领域需求的增长,传统焊接技术在厚板连接中面临热输入高、效率低及工艺限制等瓶颈。针对这些挑战,窄间隙焊接技术通过优化坡口设计显著降低填充量和热输入,展现出显著优势。引入激光热源形成... 随着大型厚壁结构件在核能、航空航天等关键领域需求的增长,传统焊接技术在厚板连接中面临热输入高、效率低及工艺限制等瓶颈。针对这些挑战,窄间隙焊接技术通过优化坡口设计显著降低填充量和热输入,展现出显著优势。引入激光热源形成的窄间隙激光焊技术兼具窄间隙焊和激光焊的优点,显著提升激光的可焊厚度极限,并结合填充焊丝对焊缝金属成分实施精准调控,有效改善接头力学性能。本文主要介绍了厚板窄间隙激光自熔焊和窄间隙激光焊的技术发展现状,分析了窄间隙激光焊存在的气孔、未熔合等缺陷的形成机理,并从焊接工艺优化、坡口设计、外加辅助手段三方面提出相应的焊缝质量调控策略。最后对窄间隙激光焊的研究现状进行总结并对未来发展趋势提出展望。 展开更多
关键词 窄间隙激光焊 焊接工艺 气孔缺陷 侧壁未熔合 质量调控
在线阅读 下载PDF
上颌切牙区单颗牙缺损IIPP术中跳跃间隙对种植体周软组织稳定性的影响
15
作者 林佳佳 王恩群 《中国美容医学》 2025年第4期133-137,共5页
目的:观察上颌切牙区单颗牙缺损患者即刻种植即刻修复(Immediate implant placement and provisionalization,IIPP)术中跳跃间隙对种植体周软组织稳定性的影响。方法:选择笔者医院2021年4月-2023年1月就诊的100例上颌切牙区单颗牙缺损患... 目的:观察上颌切牙区单颗牙缺损患者即刻种植即刻修复(Immediate implant placement and provisionalization,IIPP)术中跳跃间隙对种植体周软组织稳定性的影响。方法:选择笔者医院2021年4月-2023年1月就诊的100例上颌切牙区单颗牙缺损患者,均行IIPP术,以IIPP术中跳跃间隙不同分为对照组(跳跃间隙1.0~1.4 mm)和观察组(1.5~2.0 mm),每组50例。观察两组种植体周软组织稳定性、牙周软组织形态、牙齿美学效果以及患者满意度。结果:牙冠永久修复后、修复1年后观察组种植体稳定值(ISQ)系数明显高于对照组(P<0.05);修复6个月后,观察组牙龈乳头指数明显优于对照组,红色美学指数、白色美学指数明显高于对照组(P<0.05);观察组牙齿咀嚼能力、稳固性、美观度、舒适性满意度明显高于对照组(P<0.05)。结论:相比于IIPP术跳跃间隙1.0~1.4 mm,跳跃间隙为1.5~2.0 mm时可改善上颌切牙区单颗牙缺损患者种植体周软组织稳定性与牙周软组织形态,提高牙齿美学效果与患者满意度。 展开更多
关键词 上颌切牙缺损 即刻种植即刻修复术 跳跃间隙 软组织 稳定性
暂未订购
Defects in Graphene:Generation,Healing,and Their Effects on the Properties of Graphene:A Review 被引量:13
16
作者 Lili Liu Miaoqing Qing +1 位作者 Yibo Wang Shimou Chen 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2015年第6期599-606,共8页
Graphene has attracted immense investigation since its discovery.Lattice imperfections are introduced into graphene unavoidably during graphene growth or processing.These structural defects are known to significantly ... Graphene has attracted immense investigation since its discovery.Lattice imperfections are introduced into graphene unavoidably during graphene growth or processing.These structural defects are known to significantly affect electronic and chemical properties of graphene.A comprehensive understanding of graphene defect is thus of critical importance.Here we review the major progresses made in defectrelated engineering of graphene.Firstly,we give a brief introduction on the types of defects in graphene.Secondly,the generation and healing of the graphene defects are summarized.Then,the effects of defects on the chemical,electronic,magnetic,and mechanical properties of graphene are discussed.Finally,we address the associated challenges and prospects on the future study of defects in graphene and other nanocarbon materials. 展开更多
关键词 GRAPHENE VACANCY defect healing Band gap modulatio
原文传递
Design of Novel Compact Electromagnetic Bandgap Structures with Enhanced Bandwidth 被引量:1
17
作者 Ping Jiang Kang Xie 《Journal of Electronic Science and Technology》 CAS 2010年第3期262-266,共5页
Two kinds of compact electromagnetic band gap (EBG) structures are designed. A two layer compact EBG structure configured with cross spiral shape line inductors and interdigital capacitors is first presented. Becaus... Two kinds of compact electromagnetic band gap (EBG) structures are designed. A two layer compact EBG structure configured with cross spiral shape line inductors and interdigital capacitors is first presented. Because of its significantly enlarged equivalent inductor and capacitance, the period of the lattice is approximately 4.5% of the free space wavelength. By insetting several narrow slits in the ground plane, the bandwidth of the main bandgap is enhanced by nearly 19%. Further effort has been made for designing a three layer compact EBG structure. Simulation results show that its period is reduced by about 26% compared to that of proposed two layer EBG structure, and the bandwidth of the main bandgap is about 3 times as that of the proposed two layer EBG structure. The detailed designs including a two layer compact 3×7 EBG array with and without defect ground plane and the three layer EBG array are given and simulation results are presented. 展开更多
关键词 defect ground electromagnetic band gap high surface surface wave. structure impedance
在线阅读 下载PDF
Different Feeding Techniques of Microstrip Patch Antennas with Spiral Defected Ground Structure for Size Reduction and Ultra-Wide Band Operation 被引量:1
18
作者 Dalia M. Elsheakh Esmat A. Abdallah 《Journal of Electromagnetic Analysis and Applications》 2012年第10期410-418,共9页
Different feeding techniques of microstrip patch antennas with different spiral defected ground structures are presented in this paper. The investigated structures illustrate some merits in designing multi-electromagn... Different feeding techniques of microstrip patch antennas with different spiral defected ground structures are presented in this paper. The investigated structures illustrate some merits in designing multi-electromagnetic band-gap structures by adjusting the capacitance and changing the inductance through varying the width and length of spiral defected ground structure. Then by applying the three different spirals shapes (one, two and four arms) as the ground plane of microstrip patch antenna with different feeding techniques to create multi or ultra wide-band, improve the antenna gain and reduce the antenna size, it is found that the four arms spiral defected ground structure of microstrip patch antenna with offset feed gives good performance, electrical size reduction to about 75% as compared to the original patch size and ultra-wide bandwidth extends from 2 GHz up to 12 GHz with ?8 dB impedance bandwidth. 展开更多
关键词 Electromagnetic Band-gap (EBG) defected Ground Structure (DGS) MICROSTRIP PATCH Antenna (MPA)
在线阅读 下载PDF
新型红外晶体材料磷化镓(GaP)的生长结构缺陷及其性能 被引量:1
19
作者 闫泽武 王和明 +4 位作者 杨曜源 郝永亮 蔡以超 东艳萍 方珍意 《人工晶体学报》 EI CAS CSCD 北大核心 2000年第S1期154-,共1页
磷化镓 (GaP)晶体作为一种表面硬度高 ,热导率大 ,宽波段透过的红外光学材料 ,由于其优良的综合光学、机械和热学性能 ,使其在军事领域及民用高科技领域有着潜在应用的可能性。特别是该晶体材料有可能代替现有的最重要的长波红外材料Zn... 磷化镓 (GaP)晶体作为一种表面硬度高 ,热导率大 ,宽波段透过的红外光学材料 ,由于其优良的综合光学、机械和热学性能 ,使其在军事领域及民用高科技领域有着潜在应用的可能性。特别是该晶体材料有可能代替现有的最重要的长波红外材料ZnS ,或者与其形成复合材料 ,是高马赫数导弹窗口材料的选择之一。国外对磷化镓 (GaP)晶体材料已经进行了很长时间的生长研究 ,采用了许多制备方法 ,但多数只能生长磷化镓 (GaP)材料的薄膜或单晶。针对这一情况 ,我们进行了生长工艺的研究 ,选择出适合磷化镓 (GaP)晶体材料生长的条件。磷化镓 (GaP)晶体材料的制备是在真空、低压密封的生长炉中 ,采用一种新颖的气相扩散热交换法进行生长的。在磷化镓 (GaP)晶体的生长过程中 ,工艺条件要求严格控制 ,如生长界面的温场分布 ,温度梯度的大小 ,磷 (P)蒸气的蒸发与扩散速率的控制 ,以及坩埚容器材料的选择等 ,都能导致磷化镓 (GaP)晶体材料的结构缺陷 ,从而严重影响晶体材料的透过性能及其它性能。本文着重讨论了该方法生长磷化镓 (GaP)晶体材料的结构缺陷 ,以及导致各类缺陷的原因及对晶体性能的影响 ,提出了改进工艺生长条件的方法与措施 ,从而对生长出高品质的磷化镓 (GaP)晶体材料有着至关重要的作用。 展开更多
关键词 红外光学材料 磷化镓 结构缺陷 气相扩散热交换法
在线阅读 下载PDF
One-dimensional structure made of periodic slabs of SiO2/InSb offering tunable wide band gap at terahertz frequency range 被引量:1
20
作者 Sepehr Razi Fatemeh Ghasemi 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第12期170-179,共10页
Optical features of a semiconductor–dielectric photonic crystal are studied theoretically. Alternating layers of micrometer sized SiO2/In Sb slabs are considered as building blocks of the proposed ideal crystal. By i... Optical features of a semiconductor–dielectric photonic crystal are studied theoretically. Alternating layers of micrometer sized SiO2/In Sb slabs are considered as building blocks of the proposed ideal crystal. By inserting additional layers and disrupting the regularity, two more defective crystals are also proposed. Photonic band structure of the ideal crystal and its dependence on the structural parameters are explored at the first step. Transmittance of the defective crystals and its changes with the thicknesses of the layers are studied. After extracting the optimum values for the thicknesses of the unit cells of the crystals, the optical response of the proposed structures at different temperatures and incident angles are investigated. Changes of the defect layers’ induced mode(s) are discussed by taking into consideration of the temperature dependence of the In Sb layer permittivity. The results clearly reflect the high potential of the proposed crystals to be used at high temperature terahertz technology as a promising alternative to their electronic counterparts. 展开更多
关键词 photonic band gap photonic crystal semiconductor layer defect mode
原文传递
上一页 1 2 12 下一页 到第
使用帮助 返回顶部