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Excitation of defect modes from the extended photonic band-gap structures of 1D photonic lattices 被引量:2
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作者 周可雅 郭忠义 +1 位作者 Muhammad Ashfaq Ahmad 刘树田 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第1期284-288,共5页
This paper stuides numerically the model equation in a one dimensional defective photonic lattice by modifying the potential function to a periodic function. It is found that defect modes (DMs) can be regarded as Bl... This paper stuides numerically the model equation in a one dimensional defective photonic lattice by modifying the potential function to a periodic function. It is found that defect modes (DMs) can be regarded as Bloch modes which are excited from the extended photonie band-gap structure at Bloch wave-numbers with kx = 0. The DMs for both positive and negative defects are considered in this method. 展开更多
关键词 optical-induced photonic lattices photonic band-gaps defect modes
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Surface defect gap solitons in two-dimensional optical lattices
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作者 孟云吉 刘友文 唐宇煌 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第7期314-319,共6页
We investigate the existence and stability of surface defect gap solitons at an interface between a defect in a two-dimensional optical lattice and a uniform saturable Kerr nonlinear medium. The surface defect embedde... We investigate the existence and stability of surface defect gap solitons at an interface between a defect in a two-dimensional optical lattice and a uniform saturable Kerr nonlinear medium. The surface defect embedded in the two-dimensional optical lattice gives rise to some unique properties. It is interestingly found that for the negative defect, stable surface defect gap solitons can exist both in the semi-infinite gap and in the first gap. The deeper the negative defect, the narrower the stable region in the semi-infinite gap will be. For a positive defect, the surface defect gap solitons exist only in the semi-infinite gap and the stable region localizes in a low power region. 展开更多
关键词 surface defect gap soliton optical lattice saturable Kerr nonlinear media
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Surface defect gap solitons in one-dimensional dual-frequency lattices
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作者 朱伟玲 罗莉 +1 位作者 何影记 汪河洲 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第10期4319-4325,共7页
We study the surface defect gap solitons in an interface between a defect of one-dimensional dual-frequency lattices and the uniform media. Some unique properties are revealed that such lattices can broaden the region... We study the surface defect gap solitons in an interface between a defect of one-dimensional dual-frequency lattices and the uniform media. Some unique properties are revealed that such lattices can broaden the region of semi-finite gap, and the semi-finite gap exists not only in the positive and zero defects but also in the negative defect; unlike in the regular lattices, the semi-finite gap exists in the positive and zero defects but does not exist in the negative defect. In particular, stable solitons exist almost in the whole semi-finite gap for the positive and zero defects. These properties are different from other lattices with defects. In addition, it is found that the existence of surface dual-frequency lattice solitons does not need a threshold power. 展开更多
关键词 dual-frequency lattices surface defect gap solitons
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Dynamic Control of Defective Gap Mode Through Defect Location
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作者 苌磊 李应红 +3 位作者 吴云 张辉洁 王卫民 宋慧敏 《Plasma Science and Technology》 SCIE EI CAS CSCD 2016年第1期1-5,共5页
A one dimensional model is developed for defective gap mode(DGM)with two types of boundary conditions:conducting mesh and conducting sleeve.For a periodically modulated system without defect,the normalized width of... A one dimensional model is developed for defective gap mode(DGM)with two types of boundary conditions:conducting mesh and conducting sleeve.For a periodically modulated system without defect,the normalized width of spectral gaps equals to the modulation factor,which is consistent with previous studies.For a periodic system with local defects introduced by the boundary conditions,it shows that the conducting-mesh-induced DGM is always well confined by spectral gaps while the conducting-sleeve-induced DGM is not.The defect location can be a useful tool to dynamically control the frequency and spatial periodicity of DGM inside spectral gaps.This controllability can be potentially applied to the interaction between gap eigenmodes and energetic particles in fusion plasmas,and optical microcavities and waveguides in photonic crystals. 展开更多
关键词 defective gap mode boundary condition dynamic control analytical model
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Repair of peripheral nerve defects by nerve transposition using small gap bio-sleeve suture with different inner diameters at both ends 被引量:1
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作者 Yu-Hui Kou You-Lai Yu +7 位作者 Ya-Jun Zhang Na Han Xiao-Feng Yin Yu-Song Yuan Fei Yu Dian-Ying Zhang Pei-Xun Zhang Bao-Guo Jiang 《Neural Regeneration Research》 SCIE CAS CSCD 2019年第4期706-712,共7页
During peripheral nerve transposition repair, if the diameter difference between transposed nerves is large or multiple distal nerves must be repaired at the same time, traditional epineurial neurorrhaphy has the prob... During peripheral nerve transposition repair, if the diameter difference between transposed nerves is large or multiple distal nerves must be repaired at the same time, traditional epineurial neurorrhaphy has the problem of high tension at the suture site, which may even lead to the failure of nerve suture. We investigated whether a small gap bio-sleeve suture with different inner diameters at both ends can be used to repair a 2-mm tibial nerve defect by proximal transposition of the common peroneal nerve in rats and compared the results with the repair seen after epineurial neurorrhaphy. Three months after surgery, neurological function, nerve regeneration, and recovery of nerve innervation muscle were assessed using the tibial nerve function index, neuroelectrophysiological testing, muscle biomechanics and wet weight measurement, osmic acid staining, and hematoxylin-eosin staining. There was no obvious inflammatory reaction and neuroma formation in the tibial nerve after repair by the small gap bio-sleeve suture with different inner diameters at both ends. The conduction velocity, muscle strength, wet muscle weight, cross-sectional area of muscle fibers, and the number of new myelinated nerve fibers in the biosleeve suture group were similar to those in the epineurial neurorrhaphy group. Our findings indicate that small gap bio-sleeve suture with different inner diameters at both ends can achieve surgical suture between nerves of different diameters and promote regeneration and functional recovery of injured peripheral nerves. 展开更多
关键词 NERVE REGENERATION bio-sleeve small gap SLEEVE SUTURE NERVE TRANSPOSITION NERVE defect NERVE conduit NERVE reinnervation peripheral NERVE neural REGENERATION
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Influence of defect states on band gaps in the two-dimensional phononic crystal of 4340 steel in an epoxy
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作者 孔肖燕 岳蕾蕾 +1 位作者 陈雨 刘应开 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第9期400-403,共4页
The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section in an epoxy resin were studied by the plane-wave expansion and supercell calculation method. ... The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section in an epoxy resin were studied by the plane-wave expansion and supercell calculation method. The band gaps of this type of phononic crystals with different defects were calculated such as defect-free, 60° crystal linear defect states, 120° crystal linear defect states, and 180° crystal linear defect states. It was found that the band gap will emerge in different linear defects of the phononic crystals and the bandwidth of linear defect states is larger than that of the free-defect crystal by about 2.14 times within the filling fraction F = 0.1-0.85. In addition, the influence of the filling fraction on the relative width of the minimum band gap is discussed. 展开更多
关键词 defect state band width number of band gap
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Influence of Defect Density, Band Gap Discontinuity and Electron Mobility on the Performance of Perovskite Solar Cells
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作者 Issiaka Sankara Soumaïla Ouédraogo +4 位作者 Daouda Oubda Boureima Traoré Marcel Bawindsom Kébré Adama Zongo François Zougmoré 《Advances in Materials Physics and Chemistry》 2023年第8期151-160,共10页
In this manuscript, we used the SCAPS-1D software to perform numerical simulations on a perovskite solar cell. These simulations were used to study the influence of certain parameters on the electrical behavior of the... In this manuscript, we used the SCAPS-1D software to perform numerical simulations on a perovskite solar cell. These simulations were used to study the influence of certain parameters on the electrical behavior of the cell. We have shown in this study that electron mobility is strongly influenced by the thickness of the absorber, since electron velocity is reduced by thickness. The influence of the defect density shows that above 10<sup>16</sup> cm<sup>-3</sup> all the electrical parameters are affected by the defects. The band discontinuity at the interface generally plays a crucial role in the charge transport phenomenon. The importance of this study is to enable the development of good quality perovskite solar cells, while taking into account the parameters that limit solar cell performance. 展开更多
关键词 defect Density Electron Mobility Band gap PEROVSKITE SCAPS-1D Software
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纳米GaP材料Ga填隙缺陷的EPR实验观察 被引量:2
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作者 张兆春 邹陆军 崔得良 《波谱学杂志》 CAS CSCD 北大核心 2003年第4期335-342,共8页
利用电子顺磁共振 (EPR)技术对纳米GaP粉体材料的本征点缺陷进行了研究 ,结果表明 :由EPR信息的 g因子值 ( 2 .0 0 2 7± 0 .0 0 0 4 )可以确定纳米GaP粉体材料存在Ga自填隙(Gai)本征缺陷 ;纳米GaP粉体EPR信号超精细结构消失 ,以及... 利用电子顺磁共振 (EPR)技术对纳米GaP粉体材料的本征点缺陷进行了研究 ,结果表明 :由EPR信息的 g因子值 ( 2 .0 0 2 7± 0 .0 0 0 4 )可以确定纳米GaP粉体材料存在Ga自填隙(Gai)本征缺陷 ;纳米GaP粉体EPR信号超精细结构消失 ,以及谱线线宽 (ΔHPP)变窄等实验现象 ,可能是由纳米材料界面的无序性 ,以及缺陷原子和界面原子之间的电子交换造成的 ;在较低的测试温度范围内 ,升高温度引起纳米GaP材料发生晶界结构弛豫 ;当测试温度由1 0 0K升高至 42 3K时 。 展开更多
关键词 电子顺磁共振技术 纳米材料 磷化镓 点缺陷 谱线线宽 超精细结构 晶界结构弛豫 半导体材料
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GaP的缺陷随温度变化的PAT研究
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作者 张福甲 张苗 张旭 《发光学报》 EI CAS CSCD 北大核心 1996年第2期143-147,共5页
我们对LEC法制成的掺S的GaP单晶,从室温至1000℃,每隔50℃恒温30分钟,在Ar气保护下进行热处理.用正电子湮没技术(PAT)对样品中的缺陷进行了分析研究.结果指出,随着热处理温度的升高,GaP中的点缺陷组态... 我们对LEC法制成的掺S的GaP单晶,从室温至1000℃,每隔50℃恒温30分钟,在Ar气保护下进行热处理.用正电子湮没技术(PAT)对样品中的缺陷进行了分析研究.结果指出,随着热处理温度的升高,GaP中的点缺陷组态发生变化.测试结果表明,正电子湮没寿命可分解为两个寿命.其中捕获态寿命τ2随热处理温度的升高,由310ps变为330ps;进而在高温下变为280ps.相应地捕获强度I2随温度而发生变化,它反映出GaP单晶中的空位浓度也在随温度发生变化. 展开更多
关键词 缺陷 正电子寿命 磷化镓
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GaP中反位缺陷的电子结构
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作者 申三国 《郑州大学学报(自然科学版)》 CAS 1994年第3期52-55,共4页
本文利用紧束缚的格林函数方法,确定了Gap中P_(Ga)反位缺陷的波函数为深能级E的函数。理论给出反位原子上的超精细相互作用常数,同实验符合得很好,定性说明了GaP中P_(Ga)反位缺陷的次近邻原子有向外驰豫的趋势。
关键词 半导体 电子结构 磷化镓 反位缺陷
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Defects in Graphene:Generation,Healing,and Their Effects on the Properties of Graphene:A Review 被引量:13
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作者 Lili Liu Miaoqing Qing +1 位作者 Yibo Wang Shimou Chen 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2015年第6期599-606,共8页
Graphene has attracted immense investigation since its discovery.Lattice imperfections are introduced into graphene unavoidably during graphene growth or processing.These structural defects are known to significantly ... Graphene has attracted immense investigation since its discovery.Lattice imperfections are introduced into graphene unavoidably during graphene growth or processing.These structural defects are known to significantly affect electronic and chemical properties of graphene.A comprehensive understanding of graphene defect is thus of critical importance.Here we review the major progresses made in defectrelated engineering of graphene.Firstly,we give a brief introduction on the types of defects in graphene.Secondly,the generation and healing of the graphene defects are summarized.Then,the effects of defects on the chemical,electronic,magnetic,and mechanical properties of graphene are discussed.Finally,we address the associated challenges and prospects on the future study of defects in graphene and other nanocarbon materials. 展开更多
关键词 GRAPHENE VACANCY defect healing Band gap modulatio
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Design of Novel Compact Electromagnetic Bandgap Structures with Enhanced Bandwidth 被引量:1
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作者 Ping Jiang Kang Xie 《Journal of Electronic Science and Technology》 CAS 2010年第3期262-266,共5页
Two kinds of compact electromagnetic band gap (EBG) structures are designed. A two layer compact EBG structure configured with cross spiral shape line inductors and interdigital capacitors is first presented. Becaus... Two kinds of compact electromagnetic band gap (EBG) structures are designed. A two layer compact EBG structure configured with cross spiral shape line inductors and interdigital capacitors is first presented. Because of its significantly enlarged equivalent inductor and capacitance, the period of the lattice is approximately 4.5% of the free space wavelength. By insetting several narrow slits in the ground plane, the bandwidth of the main bandgap is enhanced by nearly 19%. Further effort has been made for designing a three layer compact EBG structure. Simulation results show that its period is reduced by about 26% compared to that of proposed two layer EBG structure, and the bandwidth of the main bandgap is about 3 times as that of the proposed two layer EBG structure. The detailed designs including a two layer compact 3×7 EBG array with and without defect ground plane and the three layer EBG array are given and simulation results are presented. 展开更多
关键词 defect ground electromagnetic band gap high surface surface wave. structure impedance
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Different Feeding Techniques of Microstrip Patch Antennas with Spiral Defected Ground Structure for Size Reduction and Ultra-Wide Band Operation 被引量:1
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作者 Dalia M. Elsheakh Esmat A. Abdallah 《Journal of Electromagnetic Analysis and Applications》 2012年第10期410-418,共9页
Different feeding techniques of microstrip patch antennas with different spiral defected ground structures are presented in this paper. The investigated structures illustrate some merits in designing multi-electromagn... Different feeding techniques of microstrip patch antennas with different spiral defected ground structures are presented in this paper. The investigated structures illustrate some merits in designing multi-electromagnetic band-gap structures by adjusting the capacitance and changing the inductance through varying the width and length of spiral defected ground structure. Then by applying the three different spirals shapes (one, two and four arms) as the ground plane of microstrip patch antenna with different feeding techniques to create multi or ultra wide-band, improve the antenna gain and reduce the antenna size, it is found that the four arms spiral defected ground structure of microstrip patch antenna with offset feed gives good performance, electrical size reduction to about 75% as compared to the original patch size and ultra-wide bandwidth extends from 2 GHz up to 12 GHz with ?8 dB impedance bandwidth. 展开更多
关键词 Electromagnetic Band-gap (EBG) defected Ground Structure (DGS) MICROSTRIP PATCH Antenna (MPA)
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新型红外晶体材料磷化镓(GaP)的生长结构缺陷及其性能 被引量:1
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作者 闫泽武 王和明 +4 位作者 杨曜源 郝永亮 蔡以超 东艳萍 方珍意 《人工晶体学报》 EI CAS CSCD 北大核心 2000年第S1期154-,共1页
磷化镓 (GaP)晶体作为一种表面硬度高 ,热导率大 ,宽波段透过的红外光学材料 ,由于其优良的综合光学、机械和热学性能 ,使其在军事领域及民用高科技领域有着潜在应用的可能性。特别是该晶体材料有可能代替现有的最重要的长波红外材料Zn... 磷化镓 (GaP)晶体作为一种表面硬度高 ,热导率大 ,宽波段透过的红外光学材料 ,由于其优良的综合光学、机械和热学性能 ,使其在军事领域及民用高科技领域有着潜在应用的可能性。特别是该晶体材料有可能代替现有的最重要的长波红外材料ZnS ,或者与其形成复合材料 ,是高马赫数导弹窗口材料的选择之一。国外对磷化镓 (GaP)晶体材料已经进行了很长时间的生长研究 ,采用了许多制备方法 ,但多数只能生长磷化镓 (GaP)材料的薄膜或单晶。针对这一情况 ,我们进行了生长工艺的研究 ,选择出适合磷化镓 (GaP)晶体材料生长的条件。磷化镓 (GaP)晶体材料的制备是在真空、低压密封的生长炉中 ,采用一种新颖的气相扩散热交换法进行生长的。在磷化镓 (GaP)晶体的生长过程中 ,工艺条件要求严格控制 ,如生长界面的温场分布 ,温度梯度的大小 ,磷 (P)蒸气的蒸发与扩散速率的控制 ,以及坩埚容器材料的选择等 ,都能导致磷化镓 (GaP)晶体材料的结构缺陷 ,从而严重影响晶体材料的透过性能及其它性能。本文着重讨论了该方法生长磷化镓 (GaP)晶体材料的结构缺陷 ,以及导致各类缺陷的原因及对晶体性能的影响 ,提出了改进工艺生长条件的方法与措施 ,从而对生长出高品质的磷化镓 (GaP)晶体材料有着至关重要的作用。 展开更多
关键词 红外光学材料 磷化镓 结构缺陷 气相扩散热交换法
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One-dimensional structure made of periodic slabs of SiO2/InSb offering tunable wide band gap at terahertz frequency range 被引量:1
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作者 Sepehr Razi Fatemeh Ghasemi 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第12期170-179,共10页
Optical features of a semiconductor–dielectric photonic crystal are studied theoretically. Alternating layers of micrometer sized SiO2/In Sb slabs are considered as building blocks of the proposed ideal crystal. By i... Optical features of a semiconductor–dielectric photonic crystal are studied theoretically. Alternating layers of micrometer sized SiO2/In Sb slabs are considered as building blocks of the proposed ideal crystal. By inserting additional layers and disrupting the regularity, two more defective crystals are also proposed. Photonic band structure of the ideal crystal and its dependence on the structural parameters are explored at the first step. Transmittance of the defective crystals and its changes with the thicknesses of the layers are studied. After extracting the optimum values for the thicknesses of the unit cells of the crystals, the optical response of the proposed structures at different temperatures and incident angles are investigated. Changes of the defect layers’ induced mode(s) are discussed by taking into consideration of the temperature dependence of the In Sb layer permittivity. The results clearly reflect the high potential of the proposed crystals to be used at high temperature terahertz technology as a promising alternative to their electronic counterparts. 展开更多
关键词 photonic band gap photonic crystal semiconductor layer defect mode
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Extreme narrow photonic passbands generated from defective two-segment-connected triangular waveguide networks
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作者 汤振兴 杨湘波 +1 位作者 卢剑 刘承宜 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第4期292-299,共8页
In this paper, we investigate the optical transmission properties of perfect and defective two-segment-connected tri- angular waveguide networks (2SCTWNs) and find that after introducing defects in networks, many gr... In this paper, we investigate the optical transmission properties of perfect and defective two-segment-connected tri- angular waveguide networks (2SCTWNs) and find that after introducing defects in networks, many groups of transparent extreme narrow photonic passbands (ENPPs) will be created in the middle of the transmission spectra, the number for each group and the group number of ENPPs can he adjusted by the matching ratios of waveguide length (MRWLs), the number of defects, and the number of unit cells of 2SCTWNs. The influences of MRWL, number of defects, and number of unit cells on the number, width, and position of these ENPPs are researched and a series of quantitative rules and prop- erties are obtained. It may be useful for the designing of high-sensitive optical switches, wavelength division multiplexers, extreme-narrowband filters, and other correlative waveguide network devices. 展开更多
关键词 photonic band gap defective waveguide network narrow passband
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Mono-Vacancy and B-Doped Defects in Carbon Heterojunction Nanodevices 被引量:2
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作者 Ahlam A. El-Barbary Mohamed A. Kamel +2 位作者 Khaled M. Eid Hayam O. Taha Mohamed M. Hassan 《Graphene》 2015年第4期84-90,共7页
We present a detailed theoretical study of the behavior of mono-vacancy and B-doped defects in carbon heterojunction nanodevices. We have introduced a complete set of formation energy and surface reactivity calculatio... We present a detailed theoretical study of the behavior of mono-vacancy and B-doped defects in carbon heterojunction nanodevices. We have introduced a complete set of formation energy and surface reactivity calculations, considering a range of different diameters and chiralities of combined carbon nanotubes. We have investigated three distinct combinations of carbon heterojunctions using density functional theory (DFT) and applying B3LYP/3-21g: armchair-armchair herteojunctions, zigzag-zigzag heterojunctions, and zigzag-armchair heterojunctions. We have shown for first time a detailed study of formation energy of mono-vacancy and B-doped defects of carbon heterojunction nanodevices. Our calculations show that the highest surface reactivity is found for the B-doped zigzag-armchair heterojunctions and it is easier to remove the carbon atom from the network of heterojunction armchair-armchair CNTs than the heterojunction zigzag-armchair and zigzag-zigzag CNTs. 展开更多
关键词 Band gaps CARBON Heterojunctions DFT Mono-Vacancy defectS Boron Doping
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Study and Conception of Dielectric Prohibited Band-Gap Structures by the FWCIP Method
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作者 Mohamed Karim Azizi Lasaad Latrach +2 位作者 Noureddine Sboui Ali Gharsallah Henri Baudrand 《通讯和计算机(中英文版)》 2011年第9期756-762,共7页
关键词 电介质 带隙结构 IP方法 时域有限差分 平面波方法 光子结构 迭代方法 结构模型
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GAP分析方法在自然保护区体系规划中的应用
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作者 钟晓云 《内蒙古林业调查设计》 2013年第3期1-3,共3页
我国建立有大量的国家级和地区级的自然保护区,针对这些保护区、保护区网络以及不同生物种群、群落、生态系统的GAP分析研究还有大量的空白。GAP分析是一个很好的生物多样性保护现状分析以及对现有保护区的保护有效性进行分析和评估的... 我国建立有大量的国家级和地区级的自然保护区,针对这些保护区、保护区网络以及不同生物种群、群落、生态系统的GAP分析研究还有大量的空白。GAP分析是一个很好的生物多样性保护现状分析以及对现有保护区的保护有效性进行分析和评估的有效方法。文章主要就GAP分析方法、研究进展及缺陷进行了分析及阐述。 展开更多
关键词 自然保护区 gap分析 gap的限制
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P-GaP中离子注入缺陷的形成
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作者 李宝军 张旭 《半导体光电》 CAS CSCD 北大核心 1994年第4期369-371,380,共4页
研究了Zn~+离子注入p-GaP半导体所引起的缺陷。在电流密度为0.03μA/cm~2下,将注入Zn~+离子剂量为1×101^(14)离子/厘米~2的GaP样品腐蚀出蚀坑后用SEM观察,结果表明,在离子注入区域有缺陷... 研究了Zn~+离子注入p-GaP半导体所引起的缺陷。在电流密度为0.03μA/cm~2下,将注入Zn~+离子剂量为1×101^(14)离子/厘米~2的GaP样品腐蚀出蚀坑后用SEM观察,结果表明,在离子注入区域有缺陷形成。 展开更多
关键词 离子注入 缺陷 gap
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