The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrie...The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.展开更多
通过数值模拟和实验手段相结合的方法,优化了980 nm单模半导体激光器结构。给出了一种通过计算脊波导单模激光器的光场和电流场的匹配关系来预测芯片阈值电流变化规律的方法。采用金属有机物化学气相淀积方法生长了带有腐蚀停止层的Al G...通过数值模拟和实验手段相结合的方法,优化了980 nm单模半导体激光器结构。给出了一种通过计算脊波导单模激光器的光场和电流场的匹配关系来预测芯片阈值电流变化规律的方法。采用金属有机物化学气相淀积方法生长了带有腐蚀停止层的Al Ga As/In Ga As量子阱结构激光二极管外延片,通过腐蚀停止层实现了对芯片脊波导深度的精确控制,芯片的一致性显著提高。980 nm单模半导体激光器芯片的阈值电流为11 m A,在注入电流为100 m A条件下,其光功率为93 m W,快慢轴方向远场发散角分别为40°和8°。展开更多
基金Project supported by the China Postdoctoral Science Foundation(Grant No.2018M640957)the Fundamental Research Funds for the Central Universities,China(Grant No.20101196761)+1 种基金the National Natural Science Foundation of China(Grant No.61904135)the National Defense Pre-Research Foundation of China(Grant No.31513020307)。
文摘The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.
文摘通过数值模拟和实验手段相结合的方法,优化了980 nm单模半导体激光器结构。给出了一种通过计算脊波导单模激光器的光场和电流场的匹配关系来预测芯片阈值电流变化规律的方法。采用金属有机物化学气相淀积方法生长了带有腐蚀停止层的Al Ga As/In Ga As量子阱结构激光二极管外延片,通过腐蚀停止层实现了对芯片脊波导深度的精确控制,芯片的一致性显著提高。980 nm单模半导体激光器芯片的阈值电流为11 m A,在注入电流为100 m A条件下,其光功率为93 m W,快慢轴方向远场发散角分别为40°和8°。
