Neuromorphic devices,inspired by the intricate architecture of the human brain,have garnered recognition for their prodigious computational speed and sophisticated parallel computing capabilities.Vision,the primary mo...Neuromorphic devices,inspired by the intricate architecture of the human brain,have garnered recognition for their prodigious computational speed and sophisticated parallel computing capabilities.Vision,the primary mode of external information acquisition in living organisms,has garnered substantial scholarly interest.Notwithstanding numerous studies simulating the retina through optical synapses,their applications remain circumscribed to single-mode perception.Moreover,the pivotal role of temperature,a fundamental regulator of biological activities,has regrettably been relegated to the periphery.To address these limitations,we proffer a neuromorphic device endowed with multimodal perception,grounded in the principles of light-modulated semiconductors.This device seamlessly accomplishes dynamic hybrid visual and thermal multimodal perception,featuring temperature-dependent paired pulse facilitation properties and adaptive storage.Crucially,our meticulous examination of transfer curves,capacitance–voltage(C–V)tests,and noise measurements provides insights into interface and bulk defects,elucidating the physical mechanisms underlying adaptive storage and other functionalities.Additionally,the device demonstrates a variety of synaptic functionalities,including filtering properties,Ebbinghaus curves,and memory applications in image recognition.Surprisingly,the digital recognition rate achieves a remarkable value of 98.8%.展开更多
Following publication of the original article[1],the authors found that they pasted the same data when drawing XRD for sample NCO-1 and NCO-2 in Fig.2a,however,the XRD of all four samples in the manuscript was tested,...Following publication of the original article[1],the authors found that they pasted the same data when drawing XRD for sample NCO-1 and NCO-2 in Fig.2a,however,the XRD of all four samples in the manuscript was tested,and XRD raw data were kept and can be offered.The correct Fig.2 has been provided in this Correction.展开更多
The application of solar-driven photocatalytic processes shows considerable potential for renewable energy production and environmental remediation.Graphitic carbon nitride(g-C_(3)N_(4))has emerged as a highly promisi...The application of solar-driven photocatalytic processes shows considerable potential for renewable energy production and environmental remediation.Graphitic carbon nitride(g-C_(3)N_(4))has emerged as a highly promising metal-free photocatalyst due to its outstanding electronic structure and physicochemical properties.However,the intrinsic constraints of pristine g-C_(3)N_(4),such as limited visible light absorption range,high recombination rates of photogenerated charge carriers,and a scarcity of active sites,have significantly hindered its photocatalytic performance and practical implementations.Recent studies have demonstrated that defect engineering can substantially mitigate these issues by enhancing both light absorption and charge separation efficiency,thereby improving photocatalytic performance.This reviewprovides a comprehensive overview of intrinsically defective g-C_(3)N_(4)-based materials,focusing on the types of intrinsic defects,their modification strategies,and the recent advancements in the field.It also highlights the diverse applications of defect-modified g-C_(3)N_(4),including wastewater remediation,hydrogen evolution,CO_(2)conversion,NO removal,nitrogen fixation,photocatalytic disinfection,and H_(2)O_(2)production.Finally,the current challenges and future perspectives are discussed of g-C_(3)N_(4)-based photocatalytic materials,offering insights and practical guidance for the development of advanced g-CsN4-based photocatalysts.展开更多
Low-loss tungsten–bronze microwave dielectric ceramics are dielectric materials with potential application value for miniaturized dielectric filters and antennas in the fifth-generation(5G)communication technology.In...Low-loss tungsten–bronze microwave dielectric ceramics are dielectric materials with potential application value for miniaturized dielectric filters and antennas in the fifth-generation(5G)communication technology.In this work,a novel Al/Nd co-doping method of Ba_(4)Nd_(9.33)Ti_(18)O_(54)(BNT)ceramics with a chemical formula of Ba_(4)Nd_(9.33+z/3)Ti_(18−z)Al_(z)O_(54)(BNT–AN,0≤z≤2)was proposed to improve the dielectric properties through structural and defect modulation.Together with Al-doped ceramics(Ba_(4)Nd_(9.33)Ti_(18−z)Al_(4z/3)O_(54),BNT–A,0≤z≤2)for comparison,the ceramics were prepared by a solid state method.It is found that Al/Nd co-doping method has a significant effect on improving the dielectric properties compared with Al doping.As the doping amount z increased,the relative dielectric constant(εr)and the temperature coefficient of resonant frequency(τf)of the ceramics decreased,and the Q×f values of the ceramics obviously increased when z≤1.5.Excellent microwave dielectric properties ofεr=72.2,Q×f=16,480 GHz,andτf=+14.3 ppm/℃were achieved in BNT–AN ceramics with z=1.25.Raman spectroscopy and thermally stimulated depolarization current(TSDC)technique were firstly combined to analyze the structures and defects in microwave dielectric ceramics.It is shown that the improvement on Q×f values was originated from the decrease in the strength of the A-site cation vibration and the concentration of oxygen vacancies(VO××),demonstrating the effect and mechanism underlying for structural and defect modulation on the performance improvement of microwave dielectric ceramics.展开更多
Two-dimensional transition metal dichalcogenides(TMDs)have shown great potential for application in the next generation of electronics and optoelectronics due to their atomically thin thickness,tunable band gap,and st...Two-dimensional transition metal dichalcogenides(TMDs)have shown great potential for application in the next generation of electronics and optoelectronics due to their atomically thin thickness,tunable band gap,and strong light-matter interaction.However,their practical application is still limited by challenges such as the constraints of high-temperature synthesis processes,compatibility issues of p-type/n-type doping strategies,and insufficient nanoscale patterning accuracy.Plasma treatment has become a key technology to break through these bottlenecks with its unique advantages such as low-temperature operation capability,generation of highly active reactive species and precise controllability of multiple parameters.This review comprehensively reviews the latest progress in plasma engineering of TMDs(MoS_(2),WS_(2),WSe_(2),etc.)based on a systematic“fundamental process-property modulation-device innovation”framework.The key plasma technologies are highlighted:plasma-enhanced chemical vapor deposition(PECVD)for low-temperature growth,bidirectional doping achieved through active species regulation,atomic layer precision etching,and defect engineering.The regulation mechanism of plasma on the intrinsic properties of materials is systematically analyzed,including electronic structure modification,optical property optimization(such as photoluminescence enhancement)and structural feature evolution.It then reveals how plasma technology promotes device innovation:achieving customizable structures(p-n junctions,sub-10 nanometer channels),optimizing interface properties(reducing contact resistance,integrating high-k dielectrics),and significantly improving the performance of gas sensors,photodetectors and neuromorphic computing systems.Finally,this article looks forward to future research directions,emphasizing that plasma technology is a versatile and indispensable platform for promoting TMDs towards practical applications.展开更多
基金the financial support given by National Natural Science Foundation of China(52227808,62202285)the National Science Foundation for Distinguished Young Scholars of China(51725505)+1 种基金the Development Fund for Shanghai Talents(No.2021003)Shanghai Collaborative Innovation Center of Intelligent Perception Chip Technology。
文摘Neuromorphic devices,inspired by the intricate architecture of the human brain,have garnered recognition for their prodigious computational speed and sophisticated parallel computing capabilities.Vision,the primary mode of external information acquisition in living organisms,has garnered substantial scholarly interest.Notwithstanding numerous studies simulating the retina through optical synapses,their applications remain circumscribed to single-mode perception.Moreover,the pivotal role of temperature,a fundamental regulator of biological activities,has regrettably been relegated to the periphery.To address these limitations,we proffer a neuromorphic device endowed with multimodal perception,grounded in the principles of light-modulated semiconductors.This device seamlessly accomplishes dynamic hybrid visual and thermal multimodal perception,featuring temperature-dependent paired pulse facilitation properties and adaptive storage.Crucially,our meticulous examination of transfer curves,capacitance–voltage(C–V)tests,and noise measurements provides insights into interface and bulk defects,elucidating the physical mechanisms underlying adaptive storage and other functionalities.Additionally,the device demonstrates a variety of synaptic functionalities,including filtering properties,Ebbinghaus curves,and memory applications in image recognition.Surprisingly,the digital recognition rate achieves a remarkable value of 98.8%.
文摘Following publication of the original article[1],the authors found that they pasted the same data when drawing XRD for sample NCO-1 and NCO-2 in Fig.2a,however,the XRD of all four samples in the manuscript was tested,and XRD raw data were kept and can be offered.The correct Fig.2 has been provided in this Correction.
基金This work was supported by the Key Research and Development Program of Shaanxi Province(No.2022ZDLSF07-04)Xi’an Science and Technology Projects(Nos.2022JH-RYFW-0114 and 2023JH-GXRC-0196)Graduate Innovation Fund Project of Xi'an Shiyou University(No.YCX2411003).
文摘The application of solar-driven photocatalytic processes shows considerable potential for renewable energy production and environmental remediation.Graphitic carbon nitride(g-C_(3)N_(4))has emerged as a highly promising metal-free photocatalyst due to its outstanding electronic structure and physicochemical properties.However,the intrinsic constraints of pristine g-C_(3)N_(4),such as limited visible light absorption range,high recombination rates of photogenerated charge carriers,and a scarcity of active sites,have significantly hindered its photocatalytic performance and practical implementations.Recent studies have demonstrated that defect engineering can substantially mitigate these issues by enhancing both light absorption and charge separation efficiency,thereby improving photocatalytic performance.This reviewprovides a comprehensive overview of intrinsically defective g-C_(3)N_(4)-based materials,focusing on the types of intrinsic defects,their modification strategies,and the recent advancements in the field.It also highlights the diverse applications of defect-modified g-C_(3)N_(4),including wastewater remediation,hydrogen evolution,CO_(2)conversion,NO removal,nitrogen fixation,photocatalytic disinfection,and H_(2)O_(2)production.Finally,the current challenges and future perspectives are discussed of g-C_(3)N_(4)-based photocatalytic materials,offering insights and practical guidance for the development of advanced g-CsN4-based photocatalysts.
基金This work was supported by the National Key R&D Program of China(No.2017YFB0406301)the Key-Area Research and Development Program of Guangdong Province(No.2020B010176001)the National Natural Science Foundation of China(No.51872160).
文摘Low-loss tungsten–bronze microwave dielectric ceramics are dielectric materials with potential application value for miniaturized dielectric filters and antennas in the fifth-generation(5G)communication technology.In this work,a novel Al/Nd co-doping method of Ba_(4)Nd_(9.33)Ti_(18)O_(54)(BNT)ceramics with a chemical formula of Ba_(4)Nd_(9.33+z/3)Ti_(18−z)Al_(z)O_(54)(BNT–AN,0≤z≤2)was proposed to improve the dielectric properties through structural and defect modulation.Together with Al-doped ceramics(Ba_(4)Nd_(9.33)Ti_(18−z)Al_(4z/3)O_(54),BNT–A,0≤z≤2)for comparison,the ceramics were prepared by a solid state method.It is found that Al/Nd co-doping method has a significant effect on improving the dielectric properties compared with Al doping.As the doping amount z increased,the relative dielectric constant(εr)and the temperature coefficient of resonant frequency(τf)of the ceramics decreased,and the Q×f values of the ceramics obviously increased when z≤1.5.Excellent microwave dielectric properties ofεr=72.2,Q×f=16,480 GHz,andτf=+14.3 ppm/℃were achieved in BNT–AN ceramics with z=1.25.Raman spectroscopy and thermally stimulated depolarization current(TSDC)technique were firstly combined to analyze the structures and defects in microwave dielectric ceramics.It is shown that the improvement on Q×f values was originated from the decrease in the strength of the A-site cation vibration and the concentration of oxygen vacancies(VO××),demonstrating the effect and mechanism underlying for structural and defect modulation on the performance improvement of microwave dielectric ceramics.
基金supported by the National Science Foundation of China(Nos.62304151,62204170,and 62474124)the Natural Science Foundation of Tianjin(No.24JCQNJC00520)+3 种基金the China Postdoctoral Science Foundation(No.2023M742585)the Open Project of State Key Laboratory of Transducer Technology(No.SKT2208)the open research of Songshan Lake Materials Laboratory(No.2023SLABFK07)the State Key Laboratory of Fluid Power and Mechatronic Systems(No.GZKF-202327).
文摘Two-dimensional transition metal dichalcogenides(TMDs)have shown great potential for application in the next generation of electronics and optoelectronics due to their atomically thin thickness,tunable band gap,and strong light-matter interaction.However,their practical application is still limited by challenges such as the constraints of high-temperature synthesis processes,compatibility issues of p-type/n-type doping strategies,and insufficient nanoscale patterning accuracy.Plasma treatment has become a key technology to break through these bottlenecks with its unique advantages such as low-temperature operation capability,generation of highly active reactive species and precise controllability of multiple parameters.This review comprehensively reviews the latest progress in plasma engineering of TMDs(MoS_(2),WS_(2),WSe_(2),etc.)based on a systematic“fundamental process-property modulation-device innovation”framework.The key plasma technologies are highlighted:plasma-enhanced chemical vapor deposition(PECVD)for low-temperature growth,bidirectional doping achieved through active species regulation,atomic layer precision etching,and defect engineering.The regulation mechanism of plasma on the intrinsic properties of materials is systematically analyzed,including electronic structure modification,optical property optimization(such as photoluminescence enhancement)and structural feature evolution.It then reveals how plasma technology promotes device innovation:achieving customizable structures(p-n junctions,sub-10 nanometer channels),optimizing interface properties(reducing contact resistance,integrating high-k dielectrics),and significantly improving the performance of gas sensors,photodetectors and neuromorphic computing systems.Finally,this article looks forward to future research directions,emphasizing that plasma technology is a versatile and indispensable platform for promoting TMDs towards practical applications.
