Microstructure and misfit dislocation behavior in In_xGa_(1-x)As/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition(LP-MOCVD) were analyzed by high resolution transmission elec...Microstructure and misfit dislocation behavior in In_xGa_(1-x)As/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition(LP-MOCVD) were analyzed by high resolution transmission electron microscopy(HRTEM), scanning electron microscopy(SEM), atomic force microscopy(AFM), Raman spectroscopy and Hall effect measurements. To optimize the structure of In_(0.82)Ga_(0.18)As/InP heterostructure, the In_xGa_(1-x)As buffer layer was grown. The residual strain of the In_(0.82)Ga_(0.18)As epitaxial layer was calculated. Further, the periodic growth pattern of the misfit dislocation at the interface was discovered and verified. Then the effects of misfit dislocation on the surface morphology and microstructure of the material were studied. It is found that the misfit dislocation of high indium(In) content In_(0.82)Ga_(0.18)As epitaxial layer has significant influence on the carrier concentration.展开更多
光突发交换(OBS)网络是下一代IP over WDM光网络的典型代表。文章对配置有光缓存的OBS网络核心节点中发生的多优先级业务冲突问题进行了性能分析,给出了不同优先级数据包的丢失率和平均等待时延,研究结果可以为OBS网络的实用化提供理论...光突发交换(OBS)网络是下一代IP over WDM光网络的典型代表。文章对配置有光缓存的OBS网络核心节点中发生的多优先级业务冲突问题进行了性能分析,给出了不同优先级数据包的丢失率和平均等待时延,研究结果可以为OBS网络的实用化提供理论参考。展开更多
基金supported by the National Key Basic Research Program of China(No.2012CB619200)the National Natural Science Foundation of China(No.61474053)+1 种基金the State Key Laboratory for Mechanical Behavior of Materials of Xi'an Jiaotong University(No.20161806)the Natural Science Basic Research Open Foundation of the Key Lab of Automobile Materials,Ministry of Education,Jilin University(No.1018320144001)
文摘Microstructure and misfit dislocation behavior in In_xGa_(1-x)As/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition(LP-MOCVD) were analyzed by high resolution transmission electron microscopy(HRTEM), scanning electron microscopy(SEM), atomic force microscopy(AFM), Raman spectroscopy and Hall effect measurements. To optimize the structure of In_(0.82)Ga_(0.18)As/InP heterostructure, the In_xGa_(1-x)As buffer layer was grown. The residual strain of the In_(0.82)Ga_(0.18)As epitaxial layer was calculated. Further, the periodic growth pattern of the misfit dislocation at the interface was discovered and verified. Then the effects of misfit dislocation on the surface morphology and microstructure of the material were studied. It is found that the misfit dislocation of high indium(In) content In_(0.82)Ga_(0.18)As epitaxial layer has significant influence on the carrier concentration.
基金Natural Science Foundation of Shanghai(10ZR1436300)Innovative Foundation of Shanghai Institute of Microsystem and Information TechnologyFoundation of Key Laboratory of Infrared Imaging Materials and Detectors CAS
