We present the electromagnetically induced transparency(EIT)spectra of cold Rydberg four-level cascade atoms consisting of the 6S_(1/2)→6P_(3/2)→7S_(1/2)→60P_(3/2) scheme.A coupling laser drives the Rydberg transit...We present the electromagnetically induced transparency(EIT)spectra of cold Rydberg four-level cascade atoms consisting of the 6S_(1/2)→6P_(3/2)→7S_(1/2)→60P_(3/2) scheme.A coupling laser drives the Rydberg transition,a dressing laser couples two intermediate levels and a weak probe laser probes the EIT signal.We numerically solve the Bloch equations and investigate the dependence of the probe transmission rate signal on the coupling and dressing lasers.We find that the probe transmission rate can display an EIT or electromagnetically induced absorption(EIA)profile,depending on the Rabi frequencies of the coupling and dressing lasers.When we increase the Rabi frequency of the coupling laser and keep the Rabi frequency of the probe and dressing laser fixed,flipping of the EIA to EIT spectrum occurs at the critical coupling Rabi frequency.When we apply a microwave field coupling the transition 60P_(3/2)→61S_(1/2),the EIT spectrum shows Autler–Townes splitting,which is employed to measure the microwave field.The theoretical measurement sensitivity can be 1.52×10^(−2) nV・cm^(−1)・Hz−^(1/2) at the EIA–EIT flipping point.展开更多
The integration of electric field enhancement structures(EFESs)with Rydberg atomic sensors(RASs)has garnered considerable interest due to their potential to enhance detection sensitivity in quantum measurement systems...The integration of electric field enhancement structures(EFESs)with Rydberg atomic sensors(RASs)has garnered considerable interest due to their potential to enhance detection sensitivity in quantum measurement systems.Despite this,there is a dearth of research on the directional response of EFES,and the analysis of the three-dimensional(3D)patterns of RAS remains a formidable challenge.RASs are employed in non-destructive measurement techniques,and are responsive to electric fields,primarily serving as reception devices.However,analyzing their reception patterns is a complex task that requires a sophisticated approach.To address this,we adopt characteristic mode(CM)analysis to illustrate the omnidirectional performance of RAS.According to the CM theory,the reception pattern can be calculated by a series of modal currents and their corresponding coefficients.The analytical representation of these coeficients negates the need for time-consuming full-wave(FW)numerical simulations,which are typically required to generate EFES patterns due to the necessity of scanning numerous angle parameters.This approach significantly reduces the complexity of solving EFES patterns,and provides insightful guidance for the design process.To validate the efficacy of our proposed method,we construct three prototypes.The results indicate that the final model resonates at 1.96 GHz,achieving an electric field gain of 25 dB and an out-of-roundness of 2.4 dB.These findings underscore the effectiveness of our method in analyzing EFES patterns,highlighting its potential for future applications in the field.展开更多
针对铷原子能级跃迁对光谱的特殊需求,设计并制备了795 nm单模垂直腔面发射激光器(VCSEL)。根据对VCSEL的光场和模式的分析和计算结果,设计了单模VCSEL芯片结构。采用MOCVD技术生长了外延结构,制备了不同有源区直径的氧化限制型VCSEL芯...针对铷原子能级跃迁对光谱的特殊需求,设计并制备了795 nm单模垂直腔面发射激光器(VCSEL)。根据对VCSEL的光场和模式的分析和计算结果,设计了单模VCSEL芯片结构。采用MOCVD技术生长了外延结构,制备了不同有源区直径的氧化限制型VCSEL芯片并进行了测试。当有源区直径从6μm减小到3μm时,VCSEL芯片的边模抑制比(SMSR)由8.76 d B增加到34.05 d B,阈值电流由0.77 m A减小到0.35 m A。有源区直径为6,5,4和3μm的VCSEL芯片的输出功率分别为0.37,0.46,0.58和0.44 m W,有源区直径为4μm的VCSEL芯片的远场为圆形光束,发散角为15°。85℃时3.5μm有源区直径的VCSEL芯片输出功率为0.125 m W,激射波长为795.3 nm。室温3 d B带宽大于8 GHz,满足了铷原子传感器对VCSEL单模光谱、输出功率及调制速率的要求。展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.U2341211,62175136,12241408,and 12120101004)the Innovation Program for Quantum Science and Technology(Grant No.2023ZD0300902)+1 种基金the Fundamental Research Program of Shanxi Province(Grant No.202303021224007)the 1331 Project of Shanxi Province.
文摘We present the electromagnetically induced transparency(EIT)spectra of cold Rydberg four-level cascade atoms consisting of the 6S_(1/2)→6P_(3/2)→7S_(1/2)→60P_(3/2) scheme.A coupling laser drives the Rydberg transition,a dressing laser couples two intermediate levels and a weak probe laser probes the EIT signal.We numerically solve the Bloch equations and investigate the dependence of the probe transmission rate signal on the coupling and dressing lasers.We find that the probe transmission rate can display an EIT or electromagnetically induced absorption(EIA)profile,depending on the Rabi frequencies of the coupling and dressing lasers.When we increase the Rabi frequency of the coupling laser and keep the Rabi frequency of the probe and dressing laser fixed,flipping of the EIA to EIT spectrum occurs at the critical coupling Rabi frequency.When we apply a microwave field coupling the transition 60P_(3/2)→61S_(1/2),the EIT spectrum shows Autler–Townes splitting,which is employed to measure the microwave field.The theoretical measurement sensitivity can be 1.52×10^(−2) nV・cm^(−1)・Hz−^(1/2) at the EIA–EIT flipping point.
基金Project supported by the National Natural Science Foundation of China(Nos.61901495,62401586,and U24B2009)the Hunan Provincial Natural Science Foundation(No.2022JJ40556)。
文摘The integration of electric field enhancement structures(EFESs)with Rydberg atomic sensors(RASs)has garnered considerable interest due to their potential to enhance detection sensitivity in quantum measurement systems.Despite this,there is a dearth of research on the directional response of EFES,and the analysis of the three-dimensional(3D)patterns of RAS remains a formidable challenge.RASs are employed in non-destructive measurement techniques,and are responsive to electric fields,primarily serving as reception devices.However,analyzing their reception patterns is a complex task that requires a sophisticated approach.To address this,we adopt characteristic mode(CM)analysis to illustrate the omnidirectional performance of RAS.According to the CM theory,the reception pattern can be calculated by a series of modal currents and their corresponding coefficients.The analytical representation of these coeficients negates the need for time-consuming full-wave(FW)numerical simulations,which are typically required to generate EFES patterns due to the necessity of scanning numerous angle parameters.This approach significantly reduces the complexity of solving EFES patterns,and provides insightful guidance for the design process.To validate the efficacy of our proposed method,we construct three prototypes.The results indicate that the final model resonates at 1.96 GHz,achieving an electric field gain of 25 dB and an out-of-roundness of 2.4 dB.These findings underscore the effectiveness of our method in analyzing EFES patterns,highlighting its potential for future applications in the field.
文摘针对铷原子能级跃迁对光谱的特殊需求,设计并制备了795 nm单模垂直腔面发射激光器(VCSEL)。根据对VCSEL的光场和模式的分析和计算结果,设计了单模VCSEL芯片结构。采用MOCVD技术生长了外延结构,制备了不同有源区直径的氧化限制型VCSEL芯片并进行了测试。当有源区直径从6μm减小到3μm时,VCSEL芯片的边模抑制比(SMSR)由8.76 d B增加到34.05 d B,阈值电流由0.77 m A减小到0.35 m A。有源区直径为6,5,4和3μm的VCSEL芯片的输出功率分别为0.37,0.46,0.58和0.44 m W,有源区直径为4μm的VCSEL芯片的远场为圆形光束,发散角为15°。85℃时3.5μm有源区直径的VCSEL芯片输出功率为0.125 m W,激射波长为795.3 nm。室温3 d B带宽大于8 GHz,满足了铷原子传感器对VCSEL单模光谱、输出功率及调制速率的要求。
