The influence of the growth temperature,TMIn/TEGa andⅤ/Ⅲratio on the V-defects of InGaN/GaN multi-quantum wells（MQWs） has been investigated and discussed.When the TMIn flow increases from 180 to 200 sccm,the densi...The influence of the growth temperature,TMIn/TEGa andⅤ/Ⅲratio on the V-defects of InGaN/GaN multi-quantum wells（MQWs） has been investigated and discussed.When the TMIn flow increases from 180 to 200 sccm,the density of V-defects increases from 2.72×10^（18） to 5.24×10^（18） cm^（-2）,and the V-defect width and depth increase too.The density also increases with the growth temperature.The densities are 2.05×10~8,2.72×10^（18） and 4.23×10~8 cm^（-2）,corresponding to a growth temperature of 748,753 and 758℃respectively.When the NH_3 flows are 5000,6600 and 8000 sccm,the densities of the V-defects of these samples are 6.34×10^（18）,2.72×10^（18） and 4.13×10^（18） cm^（-2）,respectively.A properⅤ/Ⅲratio is needed to achieve step flow growth mode.We get the best quality of InGaN/GaN MQWs at a growth temperature of 753℃TMIn flow at 180 sccm,NH_3 flow at 6600 sccm,a flatter surface and less V-defects density.The depths of these V-defects are from 10 to 30 nm,and the widths are from 100 to 200 nm.In order to suppress the influence of V-defects on reverse current and electro-static discharge of LEDs,it is essential to grow thicker p-GaN to fill the V-defects.展开更多
基金Project supported by the National High Technology Research and Development Program of China(No.2008AA03A197)
文摘The influence of the growth temperature,TMIn/TEGa andⅤ/Ⅲratio on the V-defects of InGaN/GaN multi-quantum wells（MQWs） has been investigated and discussed.When the TMIn flow increases from 180 to 200 sccm,the density of V-defects increases from 2.72×10^（18） to 5.24×10^（18） cm^（-2）,and the V-defect width and depth increase too.The density also increases with the growth temperature.The densities are 2.05×10~8,2.72×10^（18） and 4.23×10~8 cm^（-2）,corresponding to a growth temperature of 748,753 and 758℃respectively.When the NH_3 flows are 5000,6600 and 8000 sccm,the densities of the V-defects of these samples are 6.34×10^（18）,2.72×10^（18） and 4.13×10^（18） cm^（-2）,respectively.A properⅤ/Ⅲratio is needed to achieve step flow growth mode.We get the best quality of InGaN/GaN MQWs at a growth temperature of 753℃TMIn flow at 180 sccm,NH_3 flow at 6600 sccm,a flatter surface and less V-defects density.The depths of these V-defects are from 10 to 30 nm,and the widths are from 100 to 200 nm.In order to suppress the influence of V-defects on reverse current and electro-static discharge of LEDs,it is essential to grow thicker p-GaN to fill the V-defects.
基金Supported by National Natural Science Foundation of China(11474248,61176127,61006085,61274013,61306013)Key Program for International S&T cooperation Projects of China(2011DFA62380)Ph.D.Programs Foundation of Ministry of Education of China(20105303120002)
