The coexistence of emerging containments,such as antibiotic resistant bacteria(ARB),antibiotic-resistant genes(ARGs)and antibiotics,potentially influence elimination efficiencies in UV light-emitting diode(UV-LED)alon...The coexistence of emerging containments,such as antibiotic resistant bacteria(ARB),antibiotic-resistant genes(ARGs)and antibiotics,potentially influence elimination efficiencies in UV light-emitting diode(UV-LED)alone and UV-LED/H_(2)O_(2) system as their complex interactions.Tetracycline(TC)degradation efficiency(kF)correlated closely with its UV molar absorbance(R^(2)=0.831)in UV-LED alone system and with·OH yield(R^(2)=0.999)in UV-LED/H_(2)O_(2) system across studied wavelengths(265,280 and 310 nm).The kF values for intracellular DNA(i-ARGs)also exhibited a high correlation with UV-LED wavelengths in both systems(R^(2)=0.997-0.999).The coexistence of TC and ARB/ARGs resulted in a mutual inhibition of their degradation efficiencies due to competition for photons and·OH,along with the consequent reduction in intracellular ROS within ARB,with their degradation efficiencies exhibiting marked dependence on wavelength in both systems.Notably,the UV-LED/H_(2)O_(2) system at 265 nm effectively achieved the simultaneous removal of TC,ARB and ARGs with minimal energy consumption,and successfully fragmented ARGs.The degradation pathway of TC was analyzed,and the biotoxicity of its degradation intermediates demonstrated the environmental friendliness and safety of UV-LED/H_(2)O_(2) technology.This study elucidated the competitive interactions between antibiotics and ARB/ARGs within UV-LED/H_(2)O_(2) system,providing a promising approach for their simultaneous removal while ensuring energy efficiency.展开更多
High-quality AlN layers with low-density threading dislocations are indispensable for high-efficiency deep ultraviolet light-emitting diodes（UV-LEDs）. In this work, a high-temperature AlN epitaxial layer was grown o...High-quality AlN layers with low-density threading dislocations are indispensable for high-efficiency deep ultraviolet light-emitting diodes（UV-LEDs）. In this work, a high-temperature AlN epitaxial layer was grown on sputtered AlN layer（used as nucleation layer, SNL） by a high-yield industrial metalorganic vapor phase epitaxy（MOVPE）. The full width half maximum（FWHM） of the rocking curve shows that the AlN epitaxial layer with SNL has good crystal quality. Furthermore, the relationships between the thickness of SNL and the FWHM values of（002） and（102） peaks were also studied. Finally, utilizing an SNL to enhance the quality of the epitaxial layer, deep UV-LEDs at 282 nm were successfully realized on sapphire substrate by the high-yield industrial MOVPE. The light-output power（LOP） of a deep UV-LED reaches 1.65 mW at 20 mA with external quantum efficiency of 1.87%. In addition, the saturation LOP of the deep UV-LED is 4.31 mW at an injection current of 60 mA. Hence, our studies supply a possible process to grow commercial deep UV-LEDs in high throughput industrial MOVPE, which can increase yield, at lower cost.展开更多
基金supported by Major Scientific and Technological Innovation Project of Shandong Province(No.2020CXGC011204)Qingdao Natural Science Foundation(No.23-2-1-234-zyyd-jch).
文摘The coexistence of emerging containments,such as antibiotic resistant bacteria(ARB),antibiotic-resistant genes(ARGs)and antibiotics,potentially influence elimination efficiencies in UV light-emitting diode(UV-LED)alone and UV-LED/H_(2)O_(2) system as their complex interactions.Tetracycline(TC)degradation efficiency(kF)correlated closely with its UV molar absorbance(R^(2)=0.831)in UV-LED alone system and with·OH yield(R^(2)=0.999)in UV-LED/H_(2)O_(2) system across studied wavelengths(265,280 and 310 nm).The kF values for intracellular DNA(i-ARGs)also exhibited a high correlation with UV-LED wavelengths in both systems(R^(2)=0.997-0.999).The coexistence of TC and ARB/ARGs resulted in a mutual inhibition of their degradation efficiencies due to competition for photons and·OH,along with the consequent reduction in intracellular ROS within ARB,with their degradation efficiencies exhibiting marked dependence on wavelength in both systems.Notably,the UV-LED/H_(2)O_(2) system at 265 nm effectively achieved the simultaneous removal of TC,ARB and ARGs with minimal energy consumption,and successfully fragmented ARGs.The degradation pathway of TC was analyzed,and the biotoxicity of its degradation intermediates demonstrated the environmental friendliness and safety of UV-LED/H_(2)O_(2) technology.This study elucidated the competitive interactions between antibiotics and ARB/ARGs within UV-LED/H_(2)O_(2) system,providing a promising approach for their simultaneous removal while ensuring energy efficiency.
基金Project supported by the National Natural Sciences Foundation of China(Nos.61334009,61474109,61306050)
文摘High-quality AlN layers with low-density threading dislocations are indispensable for high-efficiency deep ultraviolet light-emitting diodes（UV-LEDs）. In this work, a high-temperature AlN epitaxial layer was grown on sputtered AlN layer（used as nucleation layer, SNL） by a high-yield industrial metalorganic vapor phase epitaxy（MOVPE）. The full width half maximum（FWHM） of the rocking curve shows that the AlN epitaxial layer with SNL has good crystal quality. Furthermore, the relationships between the thickness of SNL and the FWHM values of（002） and（102） peaks were also studied. Finally, utilizing an SNL to enhance the quality of the epitaxial layer, deep UV-LEDs at 282 nm were successfully realized on sapphire substrate by the high-yield industrial MOVPE. The light-output power（LOP） of a deep UV-LED reaches 1.65 mW at 20 mA with external quantum efficiency of 1.87%. In addition, the saturation LOP of the deep UV-LED is 4.31 mW at an injection current of 60 mA. Hence, our studies supply a possible process to grow commercial deep UV-LEDs in high throughput industrial MOVPE, which can increase yield, at lower cost.
