Vanadium oxide(VO_(x))has garnered significant attention in the realm of resistive random-access memory(RRAM)owing to its outstanding resistive switching characteristics.However,the ambiguous mechanisms of resistive s...Vanadium oxide(VO_(x))has garnered significant attention in the realm of resistive random-access memory(RRAM)owing to its outstanding resistive switching characteristics.However,the ambiguous mechanisms of resistive switching and inferior stability hinder its practical applications.Herein,an RRAM named VO_(x)/TiO_(2)/n^(++)Si device is prepared.It displays bipolar resistive switching behavior and shows superior cycle endurance(>200),a significantly high on/off ratio(>10^(2))and long-term stability.The tremendous improvement in the stability of the VO_(x)/TiO_(2)/n^(++)Si device compared with the Cu/VOx/n^(++)Si device is due to the p-i-n structure of VO_(x)/TiO_(2)/n^(++)Si.The switching mechanism of the VO_(x)/TiO_(2)/n^(++)Si device is attributed to the growth and annihilation of Cu conductive filaments.展开更多
In this work,two process-variation-tolerant schemes for a current-mode sense amplifier(CSA)of RRAM were proposed:(1)hybrid read reference generator(HRRG)that tracks process-voltage-temperature(PVT)variations and solve...In this work,two process-variation-tolerant schemes for a current-mode sense amplifier(CSA)of RRAM were proposed:(1)hybrid read reference generator(HRRG)that tracks process-voltage-temperature(PVT)variations and solve the nonlinear issue of the RRAM cells;(2)a two-stage offset-cancelled current sense amplifier(TSOCC-SA)with only two capacitors achieves a double sensing margin and a high tolerance of device mismatch.The simulation results in 28 nm CMOS technology show that the HRRG can provide a read reference that tracks PVT variations and solves the nonlinear issue of the RRAM cells.The proposed TSOCC-SA can tolerate over 64% device mismatch.展开更多
阻变存储器(resistive random access memory,RRAM)作为未来一种高性能的非挥发性存储器,具有面积小、操作电压低、兼容性好等特点.但是,在高集成存储器和频繁的写操作下,热串扰问题会严重影响RRAM的保持特性.严重情况下,热串扰问题甚...阻变存储器(resistive random access memory,RRAM)作为未来一种高性能的非挥发性存储器,具有面积小、操作电压低、兼容性好等特点.但是,在高集成存储器和频繁的写操作下,热串扰问题会严重影响RRAM的保持特性.严重情况下,热串扰问题甚至会造成一系列的错误翻转.因此,本文引入了一种高效的奇偶重排编码算法(parity rearrangement coding scheme,PRCoder)来有效缓解热串扰对RRAM的影响,并在算法层和电路层上分别进行设计与仿真.试验结果表明,PRCoder算法平均降低了32.7%的误翻转率,并同时只会在每一个存储行带来1bit的额外开销.此外,PRCoder仅仅带来0.3%的性能增加和0.008%的面积增加.展开更多
In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO2/Pt resistive switching memory de- vices. The dominant mechanism of resistive switching is the formation and rupture of the conductiv...In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO2/Pt resistive switching memory de- vices. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The conduction mechanisms for low and high resistance states are dominated by the ohmic conduc- tion and the trap-controlled space charge limited current （SCLC） mechanism, respectively. The effect of a set compliance current on the switching parameters is also studied： the low resistance and reset current are linearly dependent on the set compliance current in the log-log scale coordinate; and the set and reset voltage increase slightly with the increase of the set compliance current. A series circuit model is proposed to explain the effect of the set compliance current on the resistive switching behaviors.展开更多
Three-dimensional（3D） crossbar array architecture is one of the leading candidates for future ultra-high density nonvolatile memory applications. To realize the technological potential, understanding the reliability...Three-dimensional（3D） crossbar array architecture is one of the leading candidates for future ultra-high density nonvolatile memory applications. To realize the technological potential, understanding the reliability mechanisms of the3 D RRAM array has become a field of intense research. In this work, the endurance performance of the 3D 1D1 R crossbar array under the thermal effect is investigated in terms of numerical simulation. It is revealed that the endurance performance of the 3D 1D1 R array would be seriously deteriorated under thermal effects as the feature size scales down to a relatively small value. A possible method to alleviate the thermal effects is provided and verified by numerical simulation.展开更多
基金National Natural Science Foundation of China(No.61376017)。
文摘Vanadium oxide(VO_(x))has garnered significant attention in the realm of resistive random-access memory(RRAM)owing to its outstanding resistive switching characteristics.However,the ambiguous mechanisms of resistive switching and inferior stability hinder its practical applications.Herein,an RRAM named VO_(x)/TiO_(2)/n^(++)Si device is prepared.It displays bipolar resistive switching behavior and shows superior cycle endurance(>200),a significantly high on/off ratio(>10^(2))and long-term stability.The tremendous improvement in the stability of the VO_(x)/TiO_(2)/n^(++)Si device compared with the Cu/VOx/n^(++)Si device is due to the p-i-n structure of VO_(x)/TiO_(2)/n^(++)Si.The switching mechanism of the VO_(x)/TiO_(2)/n^(++)Si device is attributed to the growth and annihilation of Cu conductive filaments.
基金supported in part by the National Key R&D Program of China under Grant No.2019YFB2204800in part by the Major Scientific Research Project of Zhejiang Lab(Grant No.2019KC0AD02)+1 种基金in part by the National Natural Science Foundation of China under Grants 61904200the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No.XDB44000000。
文摘In this work,two process-variation-tolerant schemes for a current-mode sense amplifier(CSA)of RRAM were proposed:(1)hybrid read reference generator(HRRG)that tracks process-voltage-temperature(PVT)variations and solve the nonlinear issue of the RRAM cells;(2)a two-stage offset-cancelled current sense amplifier(TSOCC-SA)with only two capacitors achieves a double sensing margin and a high tolerance of device mismatch.The simulation results in 28 nm CMOS technology show that the HRRG can provide a read reference that tracks PVT variations and solves the nonlinear issue of the RRAM cells.The proposed TSOCC-SA can tolerate over 64% device mismatch.
基金supported by the National Basic Research Program of China(Grant No.2011CBA00606)the National Natural Science Foundation of China(Grant Nos.61106106,11304237,61376099,and 11235008)the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant Nos.20130203130002 and 20110203110012)
文摘In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO2/Pt resistive switching memory de- vices. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The conduction mechanisms for low and high resistance states are dominated by the ohmic conduc- tion and the trap-controlled space charge limited current （SCLC） mechanism, respectively. The effect of a set compliance current on the switching parameters is also studied： the low resistance and reset current are linearly dependent on the set compliance current in the log-log scale coordinate; and the set and reset voltage increase slightly with the increase of the set compliance current. A series circuit model is proposed to explain the effect of the set compliance current on the resistive switching behaviors.
基金Project supported by the Opening Project of Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Microelectronics of Chinese Academy of Sciences,the National High Technology Research and Development Program of China(Grant No.2014AA032901)the National Natural Science Foundation of China(Grant Nos.61574166,61334007,61306117,61322408,61221004,and 61274091)+1 种基金Beijing Training Project for the Leading Talents in S&T,China(Grant No.Z151100000315008)the CAEP Microsystem and THz Science and Technology Foundation,China(Grant No.CAEPMT201504)
文摘Three-dimensional（3D） crossbar array architecture is one of the leading candidates for future ultra-high density nonvolatile memory applications. To realize the technological potential, understanding the reliability mechanisms of the3 D RRAM array has become a field of intense research. In this work, the endurance performance of the 3D 1D1 R crossbar array under the thermal effect is investigated in terms of numerical simulation. It is revealed that the endurance performance of the 3D 1D1 R array would be seriously deteriorated under thermal effects as the feature size scales down to a relatively small value. A possible method to alleviate the thermal effects is provided and verified by numerical simulation.
