为确定H9N2猪流感病毒(H9N2-SIV)通过瞬时受体电位通道M2(TRPM2)介导肺微血管上皮细胞(PMVEC)铁死亡的分子机制,使用H9N2-SIV接种PMVEC,构建TRPM2-siRNA质粒并转染细胞。用透射电镜观察细胞超微结构,用荧光探针法检测活性氧(ROS)、Ca^(...为确定H9N2猪流感病毒(H9N2-SIV)通过瞬时受体电位通道M2(TRPM2)介导肺微血管上皮细胞(PMVEC)铁死亡的分子机制,使用H9N2-SIV接种PMVEC,构建TRPM2-siRNA质粒并转染细胞。用透射电镜观察细胞超微结构,用荧光探针法检测活性氧(ROS)、Ca^(2+)和Fe^(2+);用生化试剂盒检测丙二醛(MDA)和谷胱甘肽(GSH)含量,并通过荧光定量PCR和Western-blot检测葡萄糖调节蛋白78(GRP78)、TRPM2、蛋白激酶R样内质网激酶(PERK)、活化转录因子4(ATF4)、阳离子转运调控样蛋白1(CHAC1)、谷胱甘肽过氧化物酶4(GPX4)的m RNA和蛋白表达水平。结果显示,H9N2-SIV感染可诱导细胞铁死亡,敲低TRPM2可以减少细胞内ROS水平,降低Ca^(2+)、Fe^(2+)及MDA含量,GSH水平明显增加;此外,GRP78、PERK、ATF4、CHAC1 m RNA和蛋白表达水平下调,GPX4的m RNA和蛋白表达水平上调。结果表明,H9N2-SIV感染可诱导细胞铁死亡,其可通过激活TRPM2使Ca^(2+)内流增多,进而激活PERK/ATF4/CHAC1信号通路,加速GSH耗竭,抑制GPX4的活性,促进细胞铁死亡。展开更多
Copper （Cu）-doped ZrO2 （CZO） films with different Cu content （0 at.%- 8.07 at.%） are successfully deposited on Si （100） substrates by direct current （DC） and radio frequency （RF） magnetron co-sputtering. T...Copper （Cu）-doped ZrO2 （CZO） films with different Cu content （0 at.%- 8.07 at.%） are successfully deposited on Si （100） substrates by direct current （DC） and radio frequency （RF） magnetron co-sputtering. The influences of Cu content on structural, morphological, optical and electrical properties of CZO films are discussed in detail. The CZO films exhibit ZrO2 monocline （1^-11） preferred orientation, which indicates that Cu atoms are doped in ZrO2 host lattice. The crystallite size estimated form x-ray diffraction （XRD） increases by Cu doping, which accords with the result observed from the scanning electron microscope （SEM）. The electrical resistivity decreases from 2.63 Ω·cm to 1.48 Ω·cm with Cu doping content increasing, which indicates that the conductivity of CZO film is improved. However, the visible light transmittances decrease slightly by Cu doping and the optical band gap values decrease from 4.64 eV to 4.48 eV for CZO fihns.展开更多
We prepared CuO-Ta2O5 composite films using our simple co-sputtering method for the first time. Four specimens were prepared from an as-deposited CuO-Ta2O5 sample by cutting it using a diamond- wire saw, and the speci...We prepared CuO-Ta2O5 composite films using our simple co-sputtering method for the first time. Four specimens were prepared from an as-deposited CuO-Ta2O5 sample by cutting it using a diamond- wire saw, and the specimens were subsequently annealed at 600°C - 900°C. The X-ray diffraction and photoluminescence (PL) of the annealed specimens were evaluated. The CuO-Ta2O5 film annealed at 600°C seemed to be primarily amorphous phase, and a sharp PL peak at a wavelength of 450 nm, due to the existence of Cu2+, was observed from the film. In contrast, the CuO-Ta2O5 films annealed at 700°C, 800°C, and 900°C seemed to be tetragonal CuTa2O6 phases. We expect that good-quality CuTa2O6 films can be obtained using our very simple co-sputtering method and subsequent annealing above 900°C. Such CuTa2O6 films can be used in chemisorptions conductometric gas sensors.展开更多
In this paper, we report on the first observation of blue-light emission bands from europium-doped tantalum pentoxide (Ta2O5:Eu) thin films prepared using a simple co-sputtering method. We prepared four specimens from...In this paper, we report on the first observation of blue-light emission bands from europium-doped tantalum pentoxide (Ta2O5:Eu) thin films prepared using a simple co-sputtering method. We prepared four specimens from one as-deposited sample, and we subsequently annealed them at 700°C, 800°C, 900°C, or 1000°C for 20 min. Four remarkable photoluminescence (PL) peaks at wavelengths of 600, 620, 650, and 700 nm due to the 5D0→7F1, 5D0→7F2, 5D0→7F3, and 5D0→7F4 transitions of Eu3+ were observed from all the specimens, and blue PL peaks around a wavelength of 450 nm were also observed from the specimens annealed at 800°C, 900°C, and 1000°C. The blue PL peaks seem to be originated from the 4f65d1→4f7 transition of Eu2+. Both Eu3+ and Eu2+ ions seem to exist in our Ta2O5:Eu co-sputtered thin films annealed at temperatures from 800°C to 1000°C. Such Ta2O5:Eu co-sputtered thin films seem to be used as multi-functional coating films having both anti-reflection and down-conversion effects for realizing high-efficiency silicon solar cells.展开更多
文摘为确定H9N2猪流感病毒(H9N2-SIV)通过瞬时受体电位通道M2(TRPM2)介导肺微血管上皮细胞(PMVEC)铁死亡的分子机制,使用H9N2-SIV接种PMVEC,构建TRPM2-siRNA质粒并转染细胞。用透射电镜观察细胞超微结构,用荧光探针法检测活性氧(ROS)、Ca^(2+)和Fe^(2+);用生化试剂盒检测丙二醛(MDA)和谷胱甘肽(GSH)含量,并通过荧光定量PCR和Western-blot检测葡萄糖调节蛋白78(GRP78)、TRPM2、蛋白激酶R样内质网激酶(PERK)、活化转录因子4(ATF4)、阳离子转运调控样蛋白1(CHAC1)、谷胱甘肽过氧化物酶4(GPX4)的m RNA和蛋白表达水平。结果显示,H9N2-SIV感染可诱导细胞铁死亡,敲低TRPM2可以减少细胞内ROS水平,降低Ca^(2+)、Fe^(2+)及MDA含量,GSH水平明显增加;此外,GRP78、PERK、ATF4、CHAC1 m RNA和蛋白表达水平下调,GPX4的m RNA和蛋白表达水平上调。结果表明,H9N2-SIV感染可诱导细胞铁死亡,其可通过激活TRPM2使Ca^(2+)内流增多,进而激活PERK/ATF4/CHAC1信号通路,加速GSH耗竭,抑制GPX4的活性,促进细胞铁死亡。
基金supported by the National Natural Science Foundation of China(Grant Nos.51272224 and 11164031)
文摘Copper （Cu）-doped ZrO2 （CZO） films with different Cu content （0 at.%- 8.07 at.%） are successfully deposited on Si （100） substrates by direct current （DC） and radio frequency （RF） magnetron co-sputtering. The influences of Cu content on structural, morphological, optical and electrical properties of CZO films are discussed in detail. The CZO films exhibit ZrO2 monocline （1^-11） preferred orientation, which indicates that Cu atoms are doped in ZrO2 host lattice. The crystallite size estimated form x-ray diffraction （XRD） increases by Cu doping, which accords with the result observed from the scanning electron microscope （SEM）. The electrical resistivity decreases from 2.63 Ω·cm to 1.48 Ω·cm with Cu doping content increasing, which indicates that the conductivity of CZO film is improved. However, the visible light transmittances decrease slightly by Cu doping and the optical band gap values decrease from 4.64 eV to 4.48 eV for CZO fihns.
文摘We prepared CuO-Ta2O5 composite films using our simple co-sputtering method for the first time. Four specimens were prepared from an as-deposited CuO-Ta2O5 sample by cutting it using a diamond- wire saw, and the specimens were subsequently annealed at 600°C - 900°C. The X-ray diffraction and photoluminescence (PL) of the annealed specimens were evaluated. The CuO-Ta2O5 film annealed at 600°C seemed to be primarily amorphous phase, and a sharp PL peak at a wavelength of 450 nm, due to the existence of Cu2+, was observed from the film. In contrast, the CuO-Ta2O5 films annealed at 700°C, 800°C, and 900°C seemed to be tetragonal CuTa2O6 phases. We expect that good-quality CuTa2O6 films can be obtained using our very simple co-sputtering method and subsequent annealing above 900°C. Such CuTa2O6 films can be used in chemisorptions conductometric gas sensors.
文摘In this paper, we report on the first observation of blue-light emission bands from europium-doped tantalum pentoxide (Ta2O5:Eu) thin films prepared using a simple co-sputtering method. We prepared four specimens from one as-deposited sample, and we subsequently annealed them at 700°C, 800°C, 900°C, or 1000°C for 20 min. Four remarkable photoluminescence (PL) peaks at wavelengths of 600, 620, 650, and 700 nm due to the 5D0→7F1, 5D0→7F2, 5D0→7F3, and 5D0→7F4 transitions of Eu3+ were observed from all the specimens, and blue PL peaks around a wavelength of 450 nm were also observed from the specimens annealed at 800°C, 900°C, and 1000°C. The blue PL peaks seem to be originated from the 4f65d1→4f7 transition of Eu2+. Both Eu3+ and Eu2+ ions seem to exist in our Ta2O5:Eu co-sputtered thin films annealed at temperatures from 800°C to 1000°C. Such Ta2O5:Eu co-sputtered thin films seem to be used as multi-functional coating films having both anti-reflection and down-conversion effects for realizing high-efficiency silicon solar cells.
