A novel patterned-SOI LDMOSFET with a silicon window beneath the p-type channel was designed and fabricated for RF power amplifier applications. This novel device has good DC and RF characteristics. It has no kink eff...A novel patterned-SOI LDMOSFET with a silicon window beneath the p-type channel was designed and fabricated for RF power amplifier applications. This novel device has good DC and RF characteristics. It has no kink effect on output performance,an off-state breakdown of up to 13V,and fT = 6GHz at DC bias of Vg = Vd = 3.6V.At 1.5GHz,a power-added efficiency （PAE） of 50% is achieved with an output power of up to 27dBm from this device.展开更多
0.5μm-gate-length lateral double-diffused metal-oxide-semiconductor field-effect transistors （LDMOSFETs） with low barrier body contact （LBBC） and body tied to the source （BTS） were fabricated on silicon-on-insu...0.5μm-gate-length lateral double-diffused metal-oxide-semiconductor field-effect transistors （LDMOSFETs） with low barrier body contact （LBBC） and body tied to the source （BTS） were fabricated on silicon-on-insulator （SOI） substrates. The back-gate effects on front-channel subthreshold characteristics, on-resistance, and off-state breakdown characteristics of these devices are studied in detail. The LDMOSFETs with the LBBC structure show less back-gate effect than those with the BTS structure due to better control of the floating body effect and suppression of the parasitic backchannel leakage current. A model for the SOl LDMOSFETs has been given,including the front- and back-channel conductions as well as the bias-dependent series resistance.展开更多
文摘A novel patterned-SOI LDMOSFET with a silicon window beneath the p-type channel was designed and fabricated for RF power amplifier applications. This novel device has good DC and RF characteristics. It has no kink effect on output performance,an off-state breakdown of up to 13V,and fT = 6GHz at DC bias of Vg = Vd = 3.6V.At 1.5GHz,a power-added efficiency （PAE） of 50% is achieved with an output power of up to 27dBm from this device.
基金the National Natural Science Foundation of China(No.60576051)the State Key Development Program for Basic Research of China(No.2006CB3027-01)~~
文摘0.5μm-gate-length lateral double-diffused metal-oxide-semiconductor field-effect transistors （LDMOSFETs） with low barrier body contact （LBBC） and body tied to the source （BTS） were fabricated on silicon-on-insulator （SOI） substrates. The back-gate effects on front-channel subthreshold characteristics, on-resistance, and off-state breakdown characteristics of these devices are studied in detail. The LDMOSFETs with the LBBC structure show less back-gate effect than those with the BTS structure due to better control of the floating body effect and suppression of the parasitic backchannel leakage current. A model for the SOl LDMOSFETs has been given,including the front- and back-channel conductions as well as the bias-dependent series resistance.
