Electron beams of 0.5, 1.5, 2.0, and 5.0 MeV were used to irradiate n-Si diodes to fluences of5.5×10^(13), 1.7×10^(14), and 3.3×1014 e cm^(-2). The forward voltage drop, minority carrier lifetime, and d...Electron beams of 0.5, 1.5, 2.0, and 5.0 MeV were used to irradiate n-Si diodes to fluences of5.5×10^(13), 1.7×10^(14), and 3.3×1014 e cm^(-2). The forward voltage drop, minority carrier lifetime, and deep level transient spectroscopy(DLTS) characteristics of silicon p–n junction diodes before and after irradiation were compared. At the fluence of 3.3×10^(14) e cm^(-2), the forward voltage drop increased from 1.25 V at 0.5 MeV to 7.96μs at 5.0 MeV, while the minority carrier lifetime decreased significantly from 7.09 ls at 0.5 MeV to 0.06μs at 5.0 MeV. Six types of changes in the energy levels in DLTS spectra were analyzed and discussed.展开更多
The Dit(interface states density)in p-type MOS capacitors subjected to a preoxidation heat treatment was investigated by using DLTS(Deep Level Transient Spectroscopy)technique.It is found that the strong dependence of...The Dit(interface states density)in p-type MOS capacitors subjected to a preoxidation heat treatment was investigated by using DLTS(Deep Level Transient Spectroscopy)technique.It is found that the strong dependence of the Dit on POHT(Preoxidation Heat Treatment)and starting oxygen content of substrates is expected.The DLTS technique can detects the presence of bulk defect(Et-Ev=0.29eV)at the interface presumably due to chlorine species.展开更多
We investigate high electron mobility transistors (HEMT’s) based on AlGaN/GaN grown by molecular beam epitaxy on Silicon substrates. The improvement of the performances of such transistors is still subject to the inf...We investigate high electron mobility transistors (HEMT’s) based on AlGaN/GaN grown by molecular beam epitaxy on Silicon substrates. The improvement of the performances of such transistors is still subject to the influence of threading dislocations and point defects which are commonly observed in these devices. Deep levels in FAT-HEMT’s are characterized by using Capacitance-Voltage (C-V) measurements, from which we can extract the barrier height and the donor concentration in the AlGaN layer. Deep Level Transient Spectroscopy (DLTS) Technique is also employed to identify defects in the heterostructure. Measurements reveal the presence of one electron trap with the activation energy E1 = 0.30 eV and capture cross-section σn = 3.59 10–19cm2. The localization and the identification of this trap have been discussed.展开更多
基金supported by the Beijing education and scientific research department(No.KM201510005008)
文摘Electron beams of 0.5, 1.5, 2.0, and 5.0 MeV were used to irradiate n-Si diodes to fluences of5.5×10^(13), 1.7×10^(14), and 3.3×1014 e cm^(-2). The forward voltage drop, minority carrier lifetime, and deep level transient spectroscopy(DLTS) characteristics of silicon p–n junction diodes before and after irradiation were compared. At the fluence of 3.3×10^(14) e cm^(-2), the forward voltage drop increased from 1.25 V at 0.5 MeV to 7.96μs at 5.0 MeV, while the minority carrier lifetime decreased significantly from 7.09 ls at 0.5 MeV to 0.06μs at 5.0 MeV. Six types of changes in the energy levels in DLTS spectra were analyzed and discussed.
文摘The Dit(interface states density)in p-type MOS capacitors subjected to a preoxidation heat treatment was investigated by using DLTS(Deep Level Transient Spectroscopy)technique.It is found that the strong dependence of the Dit on POHT(Preoxidation Heat Treatment)and starting oxygen content of substrates is expected.The DLTS technique can detects the presence of bulk defect(Et-Ev=0.29eV)at the interface presumably due to chlorine species.
文摘We investigate high electron mobility transistors (HEMT’s) based on AlGaN/GaN grown by molecular beam epitaxy on Silicon substrates. The improvement of the performances of such transistors is still subject to the influence of threading dislocations and point defects which are commonly observed in these devices. Deep levels in FAT-HEMT’s are characterized by using Capacitance-Voltage (C-V) measurements, from which we can extract the barrier height and the donor concentration in the AlGaN layer. Deep Level Transient Spectroscopy (DLTS) Technique is also employed to identify defects in the heterostructure. Measurements reveal the presence of one electron trap with the activation energy E1 = 0.30 eV and capture cross-section σn = 3.59 10–19cm2. The localization and the identification of this trap have been discussed.
