摘要
用电容及电流DLTS方法测量了B^+、P^+离子注入掺硼p-Si中引进的空穴缺陷能级及其退火行为.在两种离子注入样品中都测到的空穴陷阱有七个,除了常见的辐照缺陷V.O.C受主H_4(0.35)、V.O.B复合团H_5(0.29)及V_2^+双空位单受主H_(72)(0.21)外,还测到其它四个能级H_0(0.56)、H_3(0.47)、H_6(0.25)、H_(73)(0.15).此外,在注B^+样品中还测到H_1(0.57)、H_2(0.53),在注P^+样品中有三个能级H_2~＇(0.61)H_(71)~＇(0.20)、H_8~＇(0.11),其中H_8~＇浓度很小.在600℃退火后,缺陷浓度均在10^(13)cm-^(-3)以下或者完全消失.与已有的工作比较,本文所测得的各种缺陷有较高的退火温度.
The hole traps produced in p-Si by B and P ion implantations and their annealing beha-viours are investigated with capacitance and current DLTS method. Seven hole trapsH_0(0.56),H_3(0.47), H_4(0.35), H_5(0.29), H_6(0.25),H_(72)(0.21) and H_(73)(0.15)are foundin both B^+ and P^+ implanted samples. H_4、H_5、H_(75) are identified as V·O·C, V·O·Band V_2^+ respectively. H_3 and H_(73) are B related defects. Two hole traps H_1(0.57)and H_2(0.53) are found in B^+ implanted samples and three traps t_2'(0.61),H_(71)'(0.20)and H_8'(0.11) are found in P^+ implanted samples.Compared with other work, allthe defects in our work were annealed at higher temperatures.
