Interface wettability is a vital role in directly impacting the electrical contact characteristics of oxides/Cubased composites under arc erosion.Exploring its influence mechanism,especially at atomic/electronic scale...Interface wettability is a vital role in directly impacting the electrical contact characteristics of oxides/Cubased composites under arc erosion.Exploring its influence mechanism,especially at atomic/electronic scales,is significant but challenging for the rational design of oxides/Cu contacts.Here,we designed Zn_(2)SnO_(4)/Cu electrical contacts aiming to solve the poor wettability of SnO_(2)/Cu composites.It was found that Zn_(2)SnO_(4)could remarkably improve the arc resistance of Cu-based electrical contacts,which was benefited by the excellent interface wettability of Zn_(2)SnO_(4)/Cu.The characterization of eroded surface indicated that Zn_(2)SnO_(4)particles distributed uniformly on the contact surface,leading to stable electrical contact characteristic.Nevertheless,SnO_(2)considerably deteriorated the arc resistance of SnO_(2)/Cu composite by agglomerating on the surface.The effect mechanism of wettability on arc resistance was investigated through density function theory(DFT)study.It revealed that strong polar covalent bonds across the Zn_(2)SnO_(4)/Cu interface contributed to improving the interfacial adhesion strength/wettability and thus significantly enhanced the arc resistance.For binary SnO_(2)/Cu interface,ionic bonds resulted in weak interface adhesion,giving rise to deterioration of electrical contact characteristic.This work discloses the bonding mechanism of oxide/Cu interfaces and paves an avenue for the rational design of ternary oxide/Cu-based electrical contact materials.展开更多
采用溶胶-凝胶法和化学沉积法制备了Li4Ti4.75Cu0.25O12/SnO2复合活性材料。通过X射线衍射（XRD）、扫描电镜（SEM）、恒流充放电测试对材料进行结构、形貌表征及电化学性能测试。结果表明：Li4Ti4.75Cu0.25O12/SnO2复合活性物质能够进...采用溶胶-凝胶法和化学沉积法制备了Li4Ti4.75Cu0.25O12/SnO2复合活性材料。通过X射线衍射（XRD）、扫描电镜（SEM）、恒流充放电测试对材料进行结构、形貌表征及电化学性能测试。结果表明：Li4Ti4.75Cu0.25O12/SnO2复合活性物质能够进一步改善倍率性能的同时,循环性能也得到了很好的保证。当电压在1~3 V时,电流密度为1C倍率条件下,Li4Ti4.75Cu0.25O12/SnO2复合材料首次放电比容量高达202.55 m A·h/g。经过50次循环后,容量仍保持在202.51 m A·h/g,容量保持率高达99.98%。展开更多
To fabricate a heterostructure solar cell using environmentally friendly materials and low cost techniques, tin oxide (SnO2) and cuprous oxide (Cu2O) were deposited by the sol-gel method and the electrochemical deposi...To fabricate a heterostructure solar cell using environmentally friendly materials and low cost techniques, tin oxide (SnO2) and cuprous oxide (Cu2O) were deposited by the sol-gel method and the electrochemical deposition, respectively. The SnO2 films were deposited from a SnCl2 solution containing ethanol and acetic acid. The Cu2O films were deposited using a galvanostatic method from an aqueous bath containing CuSO4 and lactic acid at a temperature of 40°C. The Cu2O/SnO2 heterostructure solar cells showed rectification and photovoltaic properties, and the best cell showed a conversion efficiency of 6.6 × 10-2 % with an open-circuit voltage of 0.29 V, a short-circuit current of 0.58 mA/cm2, and a fill factor of 0.39.展开更多
According to the principle that fiber-like arrangement of reinforcing particles SnO2 paralleling to the direction of current is propitious to the electrical and mechanical performance of the electrical contact materia...According to the principle that fiber-like arrangement of reinforcing particles SnO2 paralleling to the direction of current is propitious to the electrical and mechanical performance of the electrical contact materials, we proposed and reported a novel precursor route used to prepare Ag/SnO,. electrical contact material with fiber- like arrangement of reinforcing nanoparticles. The mechanism for the formation of fiber-like arrangement of rein- forcing nanoparticles in Ag/SnO2 electrical contact material was also discussed. The as-prepared samples were char- acterized by means of scanning electron microscope （SEM）, optical microscope （OM）, energy-dispersive X-ray spectroscopy （EDX）, MHV2000 microhardness test, and double bridge tester. The analysis showed that the as-prepared Ag/SnO,, electrical contact material with fiber-like arrangement of reinforcing nanoparticles exhibits a high elongation of 24 %, a particularly low electrical resistivity of 2.08 μΩ. cm, and low arcing energy, and thus has considerable technical, economical and environmental benefits.展开更多
Porous Cu-doped SnO<sub>2</sub> thin films were synthesized by the sol-gel dip-coating method for enhancing methanol sensing performance. The effect of Cu doping concentration on the SnO<sub>2</su...Porous Cu-doped SnO<sub>2</sub> thin films were synthesized by the sol-gel dip-coating method for enhancing methanol sensing performance. The effect of Cu doping concentration on the SnO<sub>2</sub> sensibility was investigated. XRD data confirm that the fabricated SnO<sub>2</sub> films are polycrystalline with tetragonal rutile crystal structure. AFM and SEM micrographs confirmed the roughness and the porosity of SnO<sub>2</sub> surface, respectively. UV-Vis spectrum shows that SnO<sub>2</sub> thin films exhibit high transmittance in the visible region ~95%. The band gap (3.80 - 3.92 eV) and the optical thickness (893 - 131 nm) of prepared films were calculated from transmittance data. The sensing results demonstrate that SnO<sub>2</sub> films have a high sensitivity and a fast response to methanol. In particular, 3% Cu-SnO<sub>2</sub> films have a higher sensitivity (98%), faster response (10-<sup>2</sup> s) and shorter recovery time (18 s) than other films.展开更多
基金financially supported by the National Natural Science Foundation of China(Nos.51877048 and 11875046)。
文摘Interface wettability is a vital role in directly impacting the electrical contact characteristics of oxides/Cubased composites under arc erosion.Exploring its influence mechanism,especially at atomic/electronic scales,is significant but challenging for the rational design of oxides/Cu contacts.Here,we designed Zn_(2)SnO_(4)/Cu electrical contacts aiming to solve the poor wettability of SnO_(2)/Cu composites.It was found that Zn_(2)SnO_(4)could remarkably improve the arc resistance of Cu-based electrical contacts,which was benefited by the excellent interface wettability of Zn_(2)SnO_(4)/Cu.The characterization of eroded surface indicated that Zn_(2)SnO_(4)particles distributed uniformly on the contact surface,leading to stable electrical contact characteristic.Nevertheless,SnO_(2)considerably deteriorated the arc resistance of SnO_(2)/Cu composite by agglomerating on the surface.The effect mechanism of wettability on arc resistance was investigated through density function theory(DFT)study.It revealed that strong polar covalent bonds across the Zn_(2)SnO_(4)/Cu interface contributed to improving the interfacial adhesion strength/wettability and thus significantly enhanced the arc resistance.For binary SnO_(2)/Cu interface,ionic bonds resulted in weak interface adhesion,giving rise to deterioration of electrical contact characteristic.This work discloses the bonding mechanism of oxide/Cu interfaces and paves an avenue for the rational design of ternary oxide/Cu-based electrical contact materials.
文摘采用溶胶-凝胶法和化学沉积法制备了Li4Ti4.75Cu0.25O12/SnO2复合活性材料。通过X射线衍射（XRD）、扫描电镜（SEM）、恒流充放电测试对材料进行结构、形貌表征及电化学性能测试。结果表明：Li4Ti4.75Cu0.25O12/SnO2复合活性物质能够进一步改善倍率性能的同时,循环性能也得到了很好的保证。当电压在1~3 V时,电流密度为1C倍率条件下,Li4Ti4.75Cu0.25O12/SnO2复合材料首次放电比容量高达202.55 m A·h/g。经过50次循环后,容量仍保持在202.51 m A·h/g,容量保持率高达99.98%。
文摘To fabricate a heterostructure solar cell using environmentally friendly materials and low cost techniques, tin oxide (SnO2) and cuprous oxide (Cu2O) were deposited by the sol-gel method and the electrochemical deposition, respectively. The SnO2 films were deposited from a SnCl2 solution containing ethanol and acetic acid. The Cu2O films were deposited using a galvanostatic method from an aqueous bath containing CuSO4 and lactic acid at a temperature of 40°C. The Cu2O/SnO2 heterostructure solar cells showed rectification and photovoltaic properties, and the best cell showed a conversion efficiency of 6.6 × 10-2 % with an open-circuit voltage of 0.29 V, a short-circuit current of 0.58 mA/cm2, and a fill factor of 0.39.
基金National Major Scientific&Technological Achievement Transformation Project
文摘According to the principle that fiber-like arrangement of reinforcing particles SnO2 paralleling to the direction of current is propitious to the electrical and mechanical performance of the electrical contact materials, we proposed and reported a novel precursor route used to prepare Ag/SnO,. electrical contact material with fiber- like arrangement of reinforcing nanoparticles. The mechanism for the formation of fiber-like arrangement of rein- forcing nanoparticles in Ag/SnO2 electrical contact material was also discussed. The as-prepared samples were char- acterized by means of scanning electron microscope （SEM）, optical microscope （OM）, energy-dispersive X-ray spectroscopy （EDX）, MHV2000 microhardness test, and double bridge tester. The analysis showed that the as-prepared Ag/SnO,, electrical contact material with fiber-like arrangement of reinforcing nanoparticles exhibits a high elongation of 24 %, a particularly low electrical resistivity of 2.08 μΩ. cm, and low arcing energy, and thus has considerable technical, economical and environmental benefits.
文摘Porous Cu-doped SnO<sub>2</sub> thin films were synthesized by the sol-gel dip-coating method for enhancing methanol sensing performance. The effect of Cu doping concentration on the SnO<sub>2</sub> sensibility was investigated. XRD data confirm that the fabricated SnO<sub>2</sub> films are polycrystalline with tetragonal rutile crystal structure. AFM and SEM micrographs confirmed the roughness and the porosity of SnO<sub>2</sub> surface, respectively. UV-Vis spectrum shows that SnO<sub>2</sub> thin films exhibit high transmittance in the visible region ~95%. The band gap (3.80 - 3.92 eV) and the optical thickness (893 - 131 nm) of prepared films were calculated from transmittance data. The sensing results demonstrate that SnO<sub>2</sub> films have a high sensitivity and a fast response to methanol. In particular, 3% Cu-SnO<sub>2</sub> films have a higher sensitivity (98%), faster response (10-<sup>2</sup> s) and shorter recovery time (18 s) than other films.
