It is clearly shown that the stagnant layer effect is present in entire temperature range in CVD process by pyrolysis of silane. The Curves in logarithmic growth rate vs reciprocal temperature plot can be divided into...It is clearly shown that the stagnant layer effect is present in entire temperature range in CVD process by pyrolysis of silane. The Curves in logarithmic growth rate vs reciprocal temperature plot can be divided into three straight line ranges. In high temperature region the rate-controlling mechanism is the diffusion of silicon atoms, but not of silane, which pass through the stagnant layer after thermal decomposition of silane. In intermediate and low temperature region the growth rate-controlling factor is the decomposition rate of silane in the stagnant layer, but not the surface reaction process. Owing to the difference in ratecontrolling mechanism the growth rate has different dependences on the height of stagnant layer. In intermediate and low temperature region the growth rate is proportional to the stagnant layer height, but in high temperature region it is inversely proportional to the square of the stagnant layer height.展开更多
Through our newly-developed ＂chemical vapor deposition integrated process （ISVD-IP）＇＂ using carbon OlOXlae （t..u2） as me raw matenal and only carbon source introduced, CO2 could be catalytically activated and c...Through our newly-developed ＂chemical vapor deposition integrated process （ISVD-IP）＇＂ using carbon OlOXlae （t..u2） as me raw matenal and only carbon source introduced, CO2 could be catalytically activated and converted to a new solid-form product, i.e., carbon nanotubes （CO2-derived） at a quite high yield （the single-pass carbon yield in the solid-form carbon-product produced from CO2 catalytic capture and conversion was more than 30% at a single-pass carbon-base）. For comparison, when only pure carbon dioxide was introduced using the conventional CVD method without integrated process, no solid-form carbon-material product could be formed. In the addition of saturated steam at room temperature in the feed for CVD, there were much more end-opening carbon nano-tubes produced, at a slightly higher carbon yield. These inspiring works opened a remarkable and alternative new approach for carbon dioxide catalytic capture to solid-form product, comparing with that of CO2 sequestration （CCS） or CO2 mineralization （solidification）, etc. As a result, there was much less body volume and almost no greenhouse effect for this solid-form carbon-material than those of primitive carbon dioxide.展开更多
We have successfully demonstrated that high quality and high dielectric constant layers can be fabricated by low temperature photo-induced or -assisted processing. Ta_2O_5 and ZrO_2 have been deposited at t<400 ℃ ...We have successfully demonstrated that high quality and high dielectric constant layers can be fabricated by low temperature photo-induced or -assisted processing. Ta_2O_5 and ZrO_2 have been deposited at t<400 ℃ by means of a UV photo-CVD technique and HfO_2 by photo-assisted sol-gel processing with the aid of excimer lamps. The UV annealing of as-grown layers was found to significantly improve their electrical properties. Low leakage current densities on the order of 10 -8 A/cm 2 at 1 MV/cm for deposited ultrathin Ta_2O_5 films and ca.10 -6 A/cm 2 for the photo-CVD ZrO_2 layers and photo-irradiated sol-gel HfO_2 layers have been readily achieved. The improvement in the leakage properties of these layers is attributed to the UV-generated active oxygen species O( 1D) which strongly oxidize any suboxides to form more stoichiometric oxides on removing certain defects, oxygen vacancies and impurities present in the as-prepared layers. The photo-CVD Ta_2O_5 films deposited across 10.16-cm Si wafers exhibit a high thickness uniformity with a variation of less than \{±2.0%\} being obtained for ultrathin ca.10 nm thick films. The lamp technology can in principle be extended to larger area wafers, providing a promising low temperature route to the fabrication of a range of high quality thin films for future ULSI technology.展开更多
文摘It is clearly shown that the stagnant layer effect is present in entire temperature range in CVD process by pyrolysis of silane. The Curves in logarithmic growth rate vs reciprocal temperature plot can be divided into three straight line ranges. In high temperature region the rate-controlling mechanism is the diffusion of silicon atoms, but not of silane, which pass through the stagnant layer after thermal decomposition of silane. In intermediate and low temperature region the growth rate-controlling factor is the decomposition rate of silane in the stagnant layer, but not the surface reaction process. Owing to the difference in ratecontrolling mechanism the growth rate has different dependences on the height of stagnant layer. In intermediate and low temperature region the growth rate is proportional to the stagnant layer height, but in high temperature region it is inversely proportional to the square of the stagnant layer height.
基金the National 973 Program of Ministry of Sciences and Technologies of China(2011CB201202)the National Natural Science Foundation of China(20776089)
文摘Through our newly-developed ＂chemical vapor deposition integrated process （ISVD-IP）＇＂ using carbon OlOXlae （t..u2） as me raw matenal and only carbon source introduced, CO2 could be catalytically activated and converted to a new solid-form product, i.e., carbon nanotubes （CO2-derived） at a quite high yield （the single-pass carbon yield in the solid-form carbon-product produced from CO2 catalytic capture and conversion was more than 30% at a single-pass carbon-base）. For comparison, when only pure carbon dioxide was introduced using the conventional CVD method without integrated process, no solid-form carbon-material product could be formed. In the addition of saturated steam at room temperature in the feed for CVD, there were much more end-opening carbon nano-tubes produced, at a slightly higher carbon yield. These inspiring works opened a remarkable and alternative new approach for carbon dioxide catalytic capture to solid-form product, comparing with that of CO2 sequestration （CCS） or CO2 mineralization （solidification）, etc. As a result, there was much less body volume and almost no greenhouse effect for this solid-form carbon-material than those of primitive carbon dioxide.
文摘We have successfully demonstrated that high quality and high dielectric constant layers can be fabricated by low temperature photo-induced or -assisted processing. Ta_2O_5 and ZrO_2 have been deposited at t<400 ℃ by means of a UV photo-CVD technique and HfO_2 by photo-assisted sol-gel processing with the aid of excimer lamps. The UV annealing of as-grown layers was found to significantly improve their electrical properties. Low leakage current densities on the order of 10 -8 A/cm 2 at 1 MV/cm for deposited ultrathin Ta_2O_5 films and ca.10 -6 A/cm 2 for the photo-CVD ZrO_2 layers and photo-irradiated sol-gel HfO_2 layers have been readily achieved. The improvement in the leakage properties of these layers is attributed to the UV-generated active oxygen species O( 1D) which strongly oxidize any suboxides to form more stoichiometric oxides on removing certain defects, oxygen vacancies and impurities present in the as-prepared layers. The photo-CVD Ta_2O_5 films deposited across 10.16-cm Si wafers exhibit a high thickness uniformity with a variation of less than \{±2.0%\} being obtained for ultrathin ca.10 nm thick films. The lamp technology can in principle be extended to larger area wafers, providing a promising low temperature route to the fabrication of a range of high quality thin films for future ULSI technology.
