A low voltage bandgap reference with curvature compensation is presented. Using current mode structure, the proposed bandgap circuit has a minimum voltage of 900mV. Compensated through the VEB linearization technique,...A low voltage bandgap reference with curvature compensation is presented. Using current mode structure, the proposed bandgap circuit has a minimum voltage of 900mV. Compensated through the VEB linearization technique, this bandgap reference can reach a temperature coefficient of 10ppmFC from 0 to 150℃. With a 1.1V supply voltage,the supply current is 43μA and the PSRR is 55dB at DC frequency. This bandgap reference has been verified in a UMC 0.18μm mixed mode CMOS technology and occupies 0. 186mm^2 of chip area.展开更多
A high precision high-order curvature-compensated bandgap reference compatible with the standard CMOS process, which uses a compensation proportional to VTlnT realized by utilizing voltage to current converters and th...A high precision high-order curvature-compensated bandgap reference compatible with the standard CMOS process, which uses a compensation proportional to VTlnT realized by utilizing voltage to current converters and the voltage current characteristics of a base-emitter junction, is presented. Experiment results of the proposed bandgap reference implemented with the CSMC 0.5μm CMOS process demonstrate that a temperature coefficient of 3.9 ppm/℃ is realized at 3.6 V power supply, a power supply rejection ratio of 72 dB is achieved, and the line regulation is better than 0.304 mV/V dissipating a maximum supply current of 42 μA.展开更多
文摘A low voltage bandgap reference with curvature compensation is presented. Using current mode structure, the proposed bandgap circuit has a minimum voltage of 900mV. Compensated through the VEB linearization technique, this bandgap reference can reach a temperature coefficient of 10ppmFC from 0 to 150℃. With a 1.1V supply voltage,the supply current is 43μA and the PSRR is 55dB at DC frequency. This bandgap reference has been verified in a UMC 0.18μm mixed mode CMOS technology and occupies 0. 186mm^2 of chip area.
文摘A high precision high-order curvature-compensated bandgap reference compatible with the standard CMOS process, which uses a compensation proportional to VTlnT realized by utilizing voltage to current converters and the voltage current characteristics of a base-emitter junction, is presented. Experiment results of the proposed bandgap reference implemented with the CSMC 0.5μm CMOS process demonstrate that a temperature coefficient of 3.9 ppm/℃ is realized at 3.6 V power supply, a power supply rejection ratio of 72 dB is achieved, and the line regulation is better than 0.304 mV/V dissipating a maximum supply current of 42 μA.
