This paper optimizes the buried channel charge-coupled device(BCCD) structure fabricated by complementary metal oxide semiconductor(CMOS) technology. The optimized BCCD has advantages of low noise, high integration an...This paper optimizes the buried channel charge-coupled device(BCCD) structure fabricated by complementary metal oxide semiconductor(CMOS) technology. The optimized BCCD has advantages of low noise, high integration and high image quality. The charge transfer process shows that interface traps, weak fringing fields and potential well between adjacent gates all cause the decrease of charge transfer efficiency(CTE). CTE and well capacity are simulated with different operating voltages and gap sizes. CTE can achieve 99.999% and the well capacity reaches up to 25 000 electrons for the gap size of 130 nm and the maximum operating voltage of 3 V.展开更多
An SiC optoinjected charge-coupled device with buried channels （BCCD） is designed for the detection of ultraviolet light （UV）, and its feasibility is studied by means of Silvaco numerical simulation software. Char...An SiC optoinjected charge-coupled device with buried channels （BCCD） is designed for the detection of ultraviolet light （UV）, and its feasibility is studied by means of Silvaco numerical simulation software. Charge storage and transfer characteristics of the BCCD can be conformed by simulation results. The buried channel design is a key point to realize the high sensitivity of the device. The channel mobility of electrons in the 6H-SiC BCCD can be changed from 47 to 200 cm2/（V.s） when the channel is replaced from surface to the subsurface of 0.2 um. With the optimized device parameters, the density of stored electrons can reach up to 1.062 ×10^11 cm^-2 and the number of stored electrons is up to 1.826 × 10^8 for UV light with wavelengths from 200 to 380 nm and an intensity of 0.1 W/cm2 under a driving voltage of 15 V at room temperature.展开更多
基金supported by the National Natural Science Foundation of China(Nos.61306070,61404090 and 61674115)
文摘This paper optimizes the buried channel charge-coupled device(BCCD) structure fabricated by complementary metal oxide semiconductor(CMOS) technology. The optimized BCCD has advantages of low noise, high integration and high image quality. The charge transfer process shows that interface traps, weak fringing fields and potential well between adjacent gates all cause the decrease of charge transfer efficiency(CTE). CTE and well capacity are simulated with different operating voltages and gap sizes. CTE can achieve 99.999% and the well capacity reaches up to 25 000 electrons for the gap size of 130 nm and the maximum operating voltage of 3 V.
文摘An SiC optoinjected charge-coupled device with buried channels （BCCD） is designed for the detection of ultraviolet light （UV）, and its feasibility is studied by means of Silvaco numerical simulation software. Charge storage and transfer characteristics of the BCCD can be conformed by simulation results. The buried channel design is a key point to realize the high sensitivity of the device. The channel mobility of electrons in the 6H-SiC BCCD can be changed from 47 to 200 cm2/（V.s） when the channel is replaced from surface to the subsurface of 0.2 um. With the optimized device parameters, the density of stored electrons can reach up to 1.062 ×10^11 cm^-2 and the number of stored electrons is up to 1.826 × 10^8 for UV light with wavelengths from 200 to 380 nm and an intensity of 0.1 W/cm2 under a driving voltage of 15 V at room temperature.
