This study presents the successful synthesis of a novel Z-scheme heterojunction composite film consisting of Ag/Bi_(2)MoO_(6)/BiOBr through electrochemical processes and ionexchange techniques,followed by the photodep...This study presents the successful synthesis of a novel Z-scheme heterojunction composite film consisting of Ag/Bi_(2)MoO_(6)/BiOBr through electrochemical processes and ionexchange techniques,followed by the photodeposition of noble metal silver(Ag)onto the composite structure.The catalytic efficiency of semiconductor photocatalysts is greatly improved by utilizing the localized surface plasmon resonance(LSPR)effect observed in Ag nanoparticles(NPs).Furthermore,the noble metal Ag serves as an intermediary bridge facilitating charge transfer between Bi_(2)MoO_(6)and BiOBr,while the formation of a Schottky barrier effectively inhibits the recombination of photo-generated electron-hole pairs.As a result,the Ag-deposited Bi_(2)MoO_(6)/BiOBr film exhibits superior photocatalytic performance in the reduction of CO_(2)compared to its unmodified counterpart.Our experimental results indicate a non-linear relationship between Ag deposition and the efficiency of photocatalytic CO_(2)reduction to CO,characterized by an initial increase in efficiency followed by a decline.The optimized 1.5%-Ag/Bi_(2)MoO_(6)/BiOBr film demonstrates exceptional photocatalytic activity,attaining a CO production rate of 13.65μmol/(g·h).This research explores the fundamental mechanisms that lead to improved photocatalytic CO_(2)reduction capabilities of the Ag/Bi_(2)MoO_(6)/BiOBr film.Our research offers important perspectives for the thoughtful design and production of highly efficient photocatalysts,which are essential for advancing sustainable energy solutions.展开更多
In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO_(2)via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(t_(ch)=4,5...In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO_(2)via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(t_(ch)=4,5,6 nm)exhibit excellent electrical performance and superior uniformity.The reliability properties of ITO TFTs were evaluated in detail under positive bias stress(PBS)conditions before and after passivation.Compared to the devices without passivation,the passivated devices have only 50%threshold voltage degradation(ΔV_(th))and 50%newly generated traps due to excellent isolation of the ambient atmosphere.The negligible performance degradation of ITO TFTs with passivation during negative bias stress(NBS)and negative bias temperature stress(NBTS)verifies the outstanding immunity to the water vapor of the SiO_(2)passivation layer.Overall,the ITO TFT with the t_(ch)of 6 nm and with SiO_(2)passivation exhibits the best performance in terms of electrical properties,uniformity,and reliability,which is promising in large-area production.展开更多
Innovative use of HfO_(2)-based high-dielectric-permittivity materials could enable their integration into few-nanometre-scale devices for storing substantial quantities of electrical charges,which have received wides...Innovative use of HfO_(2)-based high-dielectric-permittivity materials could enable their integration into few-nanometre-scale devices for storing substantial quantities of electrical charges,which have received widespread applications in high-storage-density dynamic random access memory and energy-efficient complementary metal-oxide-semiconductor devices.During bipolar high electric-field cycling in numbers close to dielectric breakdown,the dielectric permittivity suddenly increases by 30 times after oxygen-vacancy ordering and ferroelectric-to-nonferroelectric phase transition of near-edge plasma-treated Hf_(0.5)Zr_(0.5)O_(2) thin-film capacitors.Here we report a much higher dielectric permittivity of 1466 during downscaling of the capacitor into the diameter of 3.85μm when the ferroelectricity suddenly disappears without high-field cycling.The stored charge density is as high as 183μC cm^(−2) at an operating voltage/time of 1.2 V/50 ns at cycle numbers of more than 10^(12) without inducing dielectric breakdown.The study of synchrotron X-ray micro-diffraction patterns show missing of a mixed tetragonal phase.The image of electron energy loss spectroscopy shows the preferred oxygen-vacancy accumulation at the regions near top/bottom electrodes as well as grain boundaries.The ultrahigh dielectric-permittivity material enables high-density integration of extremely scaled logic and memory devices in the future.展开更多
Ag TiO 2 thin films were prepared on glasses.The morphology and structure of Ag TiO 2 films were investigated by XRD, SEM and FT IR.The photocatalytic and hydrophilic properties of Ag TiO 2 thin films were also...Ag TiO 2 thin films were prepared on glasses.The morphology and structure of Ag TiO 2 films were investigated by XRD, SEM and FT IR.The photocatalytic and hydrophilic properties of Ag TiO 2 thin films were also evaluated by examining photocatalytic degradation dichlorophos under sunlight illumination and the change of contact angle respectively.The research results show that the Ag TiO 2 thin film is mainly composed of 20-100nm Ag and TiO 2 particles.The Ag TiO 2 thin films possess a super hydrophilic ability and higher photocatalytic activity than that of pure TiO 2 thin film.展开更多
Tetravalent tin(Sn^(4+))-based inorganic perovskite semiconductors like Cs_(2)SnI_(6)are expected to replace lead-based perovskite counterparts due to advantages such as structural stability and environmental friendli...Tetravalent tin(Sn^(4+))-based inorganic perovskite semiconductors like Cs_(2)SnI_(6)are expected to replace lead-based perovskite counterparts due to advantages such as structural stability and environmental friendliness.In this paper,we reported the dopant compensation effect in the component-dependent self-doped(111)-oriented Cs_(2)SnI_(6)thin films grown with pulsed laser deposition(PLD)at room temperature.The films were grown on(100)-SrTiO_(3)(STO)substrates at room temperature by PLD.Hall results of the Cs_(2)SnI_(6)films with different components realizing by controlling the ratio of SnI_(4)/CsI in the targets demonstrate a clear change of conductivity type from N-type to P-type,while the carrier concentration decreases from 1018 to 1013 and accordingly the film resistivity increases significantly from 3.8 to 2506Ωcm.The defect-relatedopticalfingerprints of Cs_(2)SnI_(6)films werealsoinvestigated withtemperature-dependent photoluminescence spectroscopy.At low temperatures of 10 K,the Cs_(2)SnI_(6)films exhibit donor-bound(D^(0)X)and donor-acceptor pair(DAP)emission,respectively,due to the self-doping effect.These re-sults indicate that controlling the composition of the PLD target is a powerful way to tune the electrical properties of Cs_(2)SnI_(6)films for possible applications in solar cells or X-ray detectors.展开更多
Amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))thin films were prepared on flexible polyimide,rigid quartz glass,and Si substrates via radio frequency magnetron sputtering at room temperature.The effect of oxygen/Ar flow rate ra...Amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))thin films were prepared on flexible polyimide,rigid quartz glass,and Si substrates via radio frequency magnetron sputtering at room temperature.The effect of oxygen/Ar flow rate ratio on the structure,optical property,surface morphology,and chemical bonding properties of the a-Ga_(2)O_(3) films was investigated.Results show that the average optical transmittance of the a-Ga_(2)O_(3) films is over 80%within the wavelength range of 300-2000 nm.The extracted optical band gap of the a-Ga_(2)O_(3) films is increased from 4.97 eV to 5.13 eV with the increase in O_(2)/Ar flow rate ratio from 0 to 0.25,due to the decrease in concentration of oxygen vacancy defects in the film.Furthermore,the optical refractive index and surface roughness of the a-Ga_(2)O_(3) films are optimized when the O_(2)/Ar flow rate ratio reaches 0.25.X-ray photoelectron spectroscopy analysis also shows that the proportion of oxygen vacancies(VO)and Ga-O chemical bonds in the O 1s peak is gradually decreased with the increase in O_(2)/Ar flow rate ratio from 0 to 0.25,proving that increasing the O_(2)/Ar flow rate ratio during film growth can reduce the concentration of oxygen vacancy defects in a-Ga_(2)O_(3) films.In this case,a-Ga_(2)O_(3) with optimal properties can be obtained.This work provides a research basis for high-performance flexible and rigid deep ultraviolet solar-blind detection devices based on a-Ga_(2)O_(3) films.展开更多
Type-II Dirac semimetal PtTe2is a promising candidate for various electronic device applications due to its high carrier mobility,high conductivity,and air stability.In this work,we report on the growth of large-scale...Type-II Dirac semimetal PtTe2is a promising candidate for various electronic device applications due to its high carrier mobility,high conductivity,and air stability.In this work,we report on the growth of large-scale PtTe_(2)films by the pulsed laser deposition(PLD)and the comparison of the magnetotransport properties with the PtTe2films grown by the chemical vapor deposition(CVD).The low-temperature Hall curves of the PLD-grown films exhibit a linear behavior,in contrast with the nonlinear characteristic of the Hall behavior observed in CVD-grown films,in which a defect gradient is introduced.Meanwhile,both PtTe2films show weak antilocalization at low temperatures,which is attributed to the strong spin–orbit coupling.展开更多
Nickel oxide(NiO)based gas sensors have at-tracted intense attention due to its high re-sponse to hydrogen sulfide(H_(2)S)gas.It has been demonstrated that the NiO sensors with exposed(111)facet exhibit excellent perf...Nickel oxide(NiO)based gas sensors have at-tracted intense attention due to its high re-sponse to hydrogen sulfide(H_(2)S)gas.It has been demonstrated that the NiO sensors with exposed(111)facet exhibit excellent perfor-mance,but the single-orientation NiO sensors with exposed(111)facet have rarely been studied.In this work,high quality(111)-ori-ented NiO epitaxial films were fabricated by pulsed laser deposition.Detailed crystalline structural information was revealed by using synchrotron based X-ray diffraction(XRD)technology.These NiO thin films show good se-lectivity for H_(2)S gas detection.Without further modification,the highest response to 100 ppm H_(2)S was measured to be 13.07 at 300℃,and limit of detection(LOD)could be as low as 186 ppb.Fitting of the electrical response curves during adsorption and desorption of H_(2)S gas indicates the two-site Langmuir kinetic processes.Combining with XPS and XAS measure-ments,the mechanism was discussed.Density functional theory(DFT)calculations show that NiO with exposed(111)facets has the most negative adsorption energy,indicating more sen-sitive to H_(2)S.These results could inspire more studies of metal oxide semiconductor-based gas sensors with specific surface.展开更多
Optimizing the orientation of β-Ga_(2)O_(3) has emerged as an effective strategy to design high-performance β-Ga_(2)O_(3) device,but the orientation growth mechanism and approach have not been revealed yet.Herein,by...Optimizing the orientation of β-Ga_(2)O_(3) has emerged as an effective strategy to design high-performance β-Ga_(2)O_(3) device,but the orientation growth mechanism and approach have not been revealed yet.Herein,by employing AlN buffer layer,the highly preferred orientation of β-Ga_(2)O_(3)(100)film rather than(-201)film is realized on 4H-SiC substrate at low sputtering power and temperature.Because β-Ga_(2)O_(3)(100)film exhibits a slower growth speed than(-201)film,the former possesses the higher dangling bond density and the lower nucleation energy,and a large conversion barrier exists between these two ori-entations.Moreover,the AlN buffer layer can suppress the surface oxidation of the 4H-SiC substrate and eliminate the strain of β-Ga_(2)O_(3)(100)film,which further reduces the nucleation energy and en-larges the conversion barrier.Meanwhile,the AlN buffer layer can increase the oxygen vacancy formation energy and decrease the oxygen vacancy concentration of β-Ga_(2)O_(3)(100)film.Consequently,the solar-blind photodetector based on the oriented film exhibits the outstanding detectivity of 1.22×10^(12) Jones and photo-to-dark current ratio of 1.11×10^(5),which are the highest among the reported β-Ga_(2)O_(3) solar-blind photodetector on the SiC substrate.Our results offer in-depth insights into the preferred orientation growth mechanism,and provide an effective way to design high-quality β-Ga_(2)O_(3)(100)orientation film and high-performance solar-blind photodetector.展开更多
The pressing demand for ultrathin and flexible shields to counter electromagnetic interference(EMI)has sparked interest in Ti_(3)C_(2)T_(x)MXene materials due to their exceptional electrical conductivity,tunable surfa...The pressing demand for ultrathin and flexible shields to counter electromagnetic interference(EMI)has sparked interest in Ti_(3)C_(2)T_(x)MXene materials due to their exceptional electrical conductivity,tunable surface chemistry,and layered structure.However,pure Ti_(3)C_(2)T_(x)MXene films often lack the mechanical properties required for practical engineering applications,and traditional reinforcement methods tend to reduce electrical conductivity.This work demonstrates an effective strategy to enhance the alignment and densely packed layered structure of Ti_(3)C_(2)T_(x)MXene films by regulating the acidity and alkalinity of Ti_(3)C_(2)T_(x)MXene aqueous solutions.This approach simultaneously improves mechanical strength and electromagnetic interference shielding effectiveness(EMI SE).Compared with original Ti_(3)C_(2)T_(x)MXene films,MXene films modified with ammonia solution(NH_(3)·H_(2)O)via OH-show a significant improvement in tensile strength(27.7±1.9 MPa).Meanwhile,MXene films treated with hydrochloric acid(HCl)via H^(+)reach an even higher tensile strength of 39±1.5 MPa.Moreover,the EMI SE values of the treated MXene films increase significantly,each reaching 66.2 and 58.4 dB.The maximum improvements in EMI SE values for the acid-and alkali-treated samples are 17.9%and 4%,respectively.In conclusion,the simultaneous enhancement of mechanical strength and EMI shielding efficacy highlights the potential of acid-and alkali-treated Ti_(3)C_(2)T_(x)MXene films for applications in ultrathin and flexible EMI shielding materials.展开更多
To mitigate secondary electromagnetic pollution,there is an urgent need to develop absorption-dominant electromagnetic interference(EMI)shielding materials with low density,reduced thickness,lightweight construction,f...To mitigate secondary electromagnetic pollution,there is an urgent need to develop absorption-dominant electromagnetic interference(EMI)shielding materials with low density,reduced thickness,lightweight construction,flexibility,exceptional mechanical strength,and superior electrothermal and photothermal properties,particularly for flexible and wearable electronics.In this regard,we designed an absorption-based composite film comprising carbon nanotubes(CNT)and α-Fe_(2)O_(3),featuring a CNT layer sandwiched between twoα-Fe_(2)O_(3)layers on the upper and lower surfaces.This composite film was fabricated through an electrodeposition process followed by a thermal annealing procedure to achieve enhanced EMI shielding performance along with improved electrothermal and photothermal properties.The strategically designed sandwich structure allows the rough surface of the upper α-Fe_(2)O_(3)layer to not only improve the impedance mismatch between free space and the composite film,facilitating the penetration of incident electromagnetic(EM)waves into the film and promoting increased EM absorption rather than reflection,but also to enhance electrical conductivity,thereby improving electron mobility and density.Consequently,the average total shielding effectiveness(SE)of the CNT/Fe_(16)-300 composite demonstrates remarkable EMI shielding effectiveness(EMI SE:56.8 dB).Furthermore,the alteration in the absorption-to-reflection ratio(A/R)signifies a transition in the EMI shielding mechanism from reflection(0.69 for the pristine CNT film)to absorption(1.86 for the CNT/Fe_(16)-300)with the incremental deposition of α-Fe_(2)O_(3)nanoparticles.This work presents a feasible manufacturing approach for developing composite films with a sandwich structure that exhibits absorption-dominant EMI shielding capabilities,contributing to advancements in thermal management and multifunctional electromagnetic shielding applications.展开更多
基金Supported by the National Natural Science Foundation of China(21978196)Natural Science Foundation of Shanxi Province(201801D211008,202403021211018)+1 种基金Shanxi Provincial Education Department(S202413597023)Jincheng High Efficiency Conversion and Utilization Technology Innovation Center of CO2 Energy and Biomass Energy。
文摘This study presents the successful synthesis of a novel Z-scheme heterojunction composite film consisting of Ag/Bi_(2)MoO_(6)/BiOBr through electrochemical processes and ionexchange techniques,followed by the photodeposition of noble metal silver(Ag)onto the composite structure.The catalytic efficiency of semiconductor photocatalysts is greatly improved by utilizing the localized surface plasmon resonance(LSPR)effect observed in Ag nanoparticles(NPs).Furthermore,the noble metal Ag serves as an intermediary bridge facilitating charge transfer between Bi_(2)MoO_(6)and BiOBr,while the formation of a Schottky barrier effectively inhibits the recombination of photo-generated electron-hole pairs.As a result,the Ag-deposited Bi_(2)MoO_(6)/BiOBr film exhibits superior photocatalytic performance in the reduction of CO_(2)compared to its unmodified counterpart.Our experimental results indicate a non-linear relationship between Ag deposition and the efficiency of photocatalytic CO_(2)reduction to CO,characterized by an initial increase in efficiency followed by a decline.The optimized 1.5%-Ag/Bi_(2)MoO_(6)/BiOBr film demonstrates exceptional photocatalytic activity,attaining a CO production rate of 13.65μmol/(g·h).This research explores the fundamental mechanisms that lead to improved photocatalytic CO_(2)reduction capabilities of the Ag/Bi_(2)MoO_(6)/BiOBr film.Our research offers important perspectives for the thoughtful design and production of highly efficient photocatalysts,which are essential for advancing sustainable energy solutions.
基金supported in part by the National Natural Science Foundation of China(62404110,62274033)Natural Science Foundation of Jiangsu Province(BK20221453)+1 种基金Fundamental Research Funds for the Central UniversitiesNatural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications(NY223159)。
文摘In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO_(2)via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(t_(ch)=4,5,6 nm)exhibit excellent electrical performance and superior uniformity.The reliability properties of ITO TFTs were evaluated in detail under positive bias stress(PBS)conditions before and after passivation.Compared to the devices without passivation,the passivated devices have only 50%threshold voltage degradation(ΔV_(th))and 50%newly generated traps due to excellent isolation of the ambient atmosphere.The negligible performance degradation of ITO TFTs with passivation during negative bias stress(NBS)and negative bias temperature stress(NBTS)verifies the outstanding immunity to the water vapor of the SiO_(2)passivation layer.Overall,the ITO TFT with the t_(ch)of 6 nm and with SiO_(2)passivation exhibits the best performance in terms of electrical properties,uniformity,and reliability,which is promising in large-area production.
基金supported by the National Key Basic Research Program of China (2022YFA1402904)Basic Research Project of Shanghai Science and Technology Innovation Action (grant number 24CL2900900)the National Natural Science Foundation of China (grant number 61904034)
文摘Innovative use of HfO_(2)-based high-dielectric-permittivity materials could enable their integration into few-nanometre-scale devices for storing substantial quantities of electrical charges,which have received widespread applications in high-storage-density dynamic random access memory and energy-efficient complementary metal-oxide-semiconductor devices.During bipolar high electric-field cycling in numbers close to dielectric breakdown,the dielectric permittivity suddenly increases by 30 times after oxygen-vacancy ordering and ferroelectric-to-nonferroelectric phase transition of near-edge plasma-treated Hf_(0.5)Zr_(0.5)O_(2) thin-film capacitors.Here we report a much higher dielectric permittivity of 1466 during downscaling of the capacitor into the diameter of 3.85μm when the ferroelectricity suddenly disappears without high-field cycling.The stored charge density is as high as 183μC cm^(−2) at an operating voltage/time of 1.2 V/50 ns at cycle numbers of more than 10^(12) without inducing dielectric breakdown.The study of synchrotron X-ray micro-diffraction patterns show missing of a mixed tetragonal phase.The image of electron energy loss spectroscopy shows the preferred oxygen-vacancy accumulation at the regions near top/bottom electrodes as well as grain boundaries.The ultrahigh dielectric-permittivity material enables high-density integration of extremely scaled logic and memory devices in the future.
文摘Ag TiO 2 thin films were prepared on glasses.The morphology and structure of Ag TiO 2 films were investigated by XRD, SEM and FT IR.The photocatalytic and hydrophilic properties of Ag TiO 2 thin films were also evaluated by examining photocatalytic degradation dichlorophos under sunlight illumination and the change of contact angle respectively.The research results show that the Ag TiO 2 thin film is mainly composed of 20-100nm Ag and TiO 2 particles.The Ag TiO 2 thin films possess a super hydrophilic ability and higher photocatalytic activity than that of pure TiO 2 thin film.
基金financially supported by the National Key Re-search and Development Program of China(No.2022YFC3700801)the Key R&D Program of Shandong Province,China(No.2024SFGC0102),the Jinan Bureau of Education(No.JNSX2023015)the Jinan Bureau of Science and Technology(No.202333042).
文摘Tetravalent tin(Sn^(4+))-based inorganic perovskite semiconductors like Cs_(2)SnI_(6)are expected to replace lead-based perovskite counterparts due to advantages such as structural stability and environmental friendliness.In this paper,we reported the dopant compensation effect in the component-dependent self-doped(111)-oriented Cs_(2)SnI_(6)thin films grown with pulsed laser deposition(PLD)at room temperature.The films were grown on(100)-SrTiO_(3)(STO)substrates at room temperature by PLD.Hall results of the Cs_(2)SnI_(6)films with different components realizing by controlling the ratio of SnI_(4)/CsI in the targets demonstrate a clear change of conductivity type from N-type to P-type,while the carrier concentration decreases from 1018 to 1013 and accordingly the film resistivity increases significantly from 3.8 to 2506Ωcm.The defect-relatedopticalfingerprints of Cs_(2)SnI_(6)films werealsoinvestigated withtemperature-dependent photoluminescence spectroscopy.At low temperatures of 10 K,the Cs_(2)SnI_(6)films exhibit donor-bound(D^(0)X)and donor-acceptor pair(DAP)emission,respectively,due to the self-doping effect.These re-sults indicate that controlling the composition of the PLD target is a powerful way to tune the electrical properties of Cs_(2)SnI_(6)films for possible applications in solar cells or X-ray detectors.
基金Research Project of Shenzhen Science and Technology Innovation Committee(JCYJ20180306170801080)。
文摘Amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))thin films were prepared on flexible polyimide,rigid quartz glass,and Si substrates via radio frequency magnetron sputtering at room temperature.The effect of oxygen/Ar flow rate ratio on the structure,optical property,surface morphology,and chemical bonding properties of the a-Ga_(2)O_(3) films was investigated.Results show that the average optical transmittance of the a-Ga_(2)O_(3) films is over 80%within the wavelength range of 300-2000 nm.The extracted optical band gap of the a-Ga_(2)O_(3) films is increased from 4.97 eV to 5.13 eV with the increase in O_(2)/Ar flow rate ratio from 0 to 0.25,due to the decrease in concentration of oxygen vacancy defects in the film.Furthermore,the optical refractive index and surface roughness of the a-Ga_(2)O_(3) films are optimized when the O_(2)/Ar flow rate ratio reaches 0.25.X-ray photoelectron spectroscopy analysis also shows that the proportion of oxygen vacancies(VO)and Ga-O chemical bonds in the O 1s peak is gradually decreased with the increase in O_(2)/Ar flow rate ratio from 0 to 0.25,proving that increasing the O_(2)/Ar flow rate ratio during film growth can reduce the concentration of oxygen vacancy defects in a-Ga_(2)O_(3) films.In this case,a-Ga_(2)O_(3) with optimal properties can be obtained.This work provides a research basis for high-performance flexible and rigid deep ultraviolet solar-blind detection devices based on a-Ga_(2)O_(3) films.
基金Project supported by the National Key R&D Program of China(Grant No.2022YFA1402404)the National Natural Science Foundation of China(Grant Nos.T2394473,624B2070,and 62274085)。
文摘Type-II Dirac semimetal PtTe2is a promising candidate for various electronic device applications due to its high carrier mobility,high conductivity,and air stability.In this work,we report on the growth of large-scale PtTe_(2)films by the pulsed laser deposition(PLD)and the comparison of the magnetotransport properties with the PtTe2films grown by the chemical vapor deposition(CVD).The low-temperature Hall curves of the PLD-grown films exhibit a linear behavior,in contrast with the nonlinear characteristic of the Hall behavior observed in CVD-grown films,in which a defect gradient is introduced.Meanwhile,both PtTe2films show weak antilocalization at low temperatures,which is attributed to the strong spin–orbit coupling.
基金supported by the National Key Research and Development Program of China(No.2022YFA1603902)the National Natural Science Foundation of China(No.12175235,No.62271462,and No.12004407)。
文摘Nickel oxide(NiO)based gas sensors have at-tracted intense attention due to its high re-sponse to hydrogen sulfide(H_(2)S)gas.It has been demonstrated that the NiO sensors with exposed(111)facet exhibit excellent perfor-mance,but the single-orientation NiO sensors with exposed(111)facet have rarely been studied.In this work,high quality(111)-ori-ented NiO epitaxial films were fabricated by pulsed laser deposition.Detailed crystalline structural information was revealed by using synchrotron based X-ray diffraction(XRD)technology.These NiO thin films show good se-lectivity for H_(2)S gas detection.Without further modification,the highest response to 100 ppm H_(2)S was measured to be 13.07 at 300℃,and limit of detection(LOD)could be as low as 186 ppb.Fitting of the electrical response curves during adsorption and desorption of H_(2)S gas indicates the two-site Langmuir kinetic processes.Combining with XPS and XAS measure-ments,the mechanism was discussed.Density functional theory(DFT)calculations show that NiO with exposed(111)facets has the most negative adsorption energy,indicating more sen-sitive to H_(2)S.These results could inspire more studies of metal oxide semiconductor-based gas sensors with specific surface.
基金supported by the National Key Research and Development Program of China(No.2021YFA0715600)the National Natural Science Foundation of China(Nos.62274125,52192611)+2 种基金the Guangdong Basic and Applied Basic Research Fund(No.2023A1515030084)the Key Research and Development Program of Shaanxi Province(Grant No.2024GX-YBXM-410)the fund of the State Key Laboratory of Solidification Processing in NWPU(No.SKLSP202220).
文摘Optimizing the orientation of β-Ga_(2)O_(3) has emerged as an effective strategy to design high-performance β-Ga_(2)O_(3) device,but the orientation growth mechanism and approach have not been revealed yet.Herein,by employing AlN buffer layer,the highly preferred orientation of β-Ga_(2)O_(3)(100)film rather than(-201)film is realized on 4H-SiC substrate at low sputtering power and temperature.Because β-Ga_(2)O_(3)(100)film exhibits a slower growth speed than(-201)film,the former possesses the higher dangling bond density and the lower nucleation energy,and a large conversion barrier exists between these two ori-entations.Moreover,the AlN buffer layer can suppress the surface oxidation of the 4H-SiC substrate and eliminate the strain of β-Ga_(2)O_(3)(100)film,which further reduces the nucleation energy and en-larges the conversion barrier.Meanwhile,the AlN buffer layer can increase the oxygen vacancy formation energy and decrease the oxygen vacancy concentration of β-Ga_(2)O_(3)(100)film.Consequently,the solar-blind photodetector based on the oriented film exhibits the outstanding detectivity of 1.22×10^(12) Jones and photo-to-dark current ratio of 1.11×10^(5),which are the highest among the reported β-Ga_(2)O_(3) solar-blind photodetector on the SiC substrate.Our results offer in-depth insights into the preferred orientation growth mechanism,and provide an effective way to design high-quality β-Ga_(2)O_(3)(100)orientation film and high-performance solar-blind photodetector.
基金supported by the National Key R&D Program of China(No.2019YFA0706802)the National Natural Science Foundation of China(Nos.52273085 and 52303113)Key Scientific Research Projects of Colleges and Universities in Henan Province,China(No.24A430045).
文摘The pressing demand for ultrathin and flexible shields to counter electromagnetic interference(EMI)has sparked interest in Ti_(3)C_(2)T_(x)MXene materials due to their exceptional electrical conductivity,tunable surface chemistry,and layered structure.However,pure Ti_(3)C_(2)T_(x)MXene films often lack the mechanical properties required for practical engineering applications,and traditional reinforcement methods tend to reduce electrical conductivity.This work demonstrates an effective strategy to enhance the alignment and densely packed layered structure of Ti_(3)C_(2)T_(x)MXene films by regulating the acidity and alkalinity of Ti_(3)C_(2)T_(x)MXene aqueous solutions.This approach simultaneously improves mechanical strength and electromagnetic interference shielding effectiveness(EMI SE).Compared with original Ti_(3)C_(2)T_(x)MXene films,MXene films modified with ammonia solution(NH_(3)·H_(2)O)via OH-show a significant improvement in tensile strength(27.7±1.9 MPa).Meanwhile,MXene films treated with hydrochloric acid(HCl)via H^(+)reach an even higher tensile strength of 39±1.5 MPa.Moreover,the EMI SE values of the treated MXene films increase significantly,each reaching 66.2 and 58.4 dB.The maximum improvements in EMI SE values for the acid-and alkali-treated samples are 17.9%and 4%,respectively.In conclusion,the simultaneous enhancement of mechanical strength and EMI shielding efficacy highlights the potential of acid-and alkali-treated Ti_(3)C_(2)T_(x)MXene films for applications in ultrathin and flexible EMI shielding materials.
基金financially supported by the National Natural Science Foundation of China(Nos.52222202 and 51772310)Chinese Academy of Sciences Key Research Program of Frontier Sciences(No.QYZDY-SSWJSC031)Shanghai Pilot Program for Basic Research-Chinese Academy of Science,Shanghai Branch(No.JCYJ-SHFY-2021-001).
文摘To mitigate secondary electromagnetic pollution,there is an urgent need to develop absorption-dominant electromagnetic interference(EMI)shielding materials with low density,reduced thickness,lightweight construction,flexibility,exceptional mechanical strength,and superior electrothermal and photothermal properties,particularly for flexible and wearable electronics.In this regard,we designed an absorption-based composite film comprising carbon nanotubes(CNT)and α-Fe_(2)O_(3),featuring a CNT layer sandwiched between twoα-Fe_(2)O_(3)layers on the upper and lower surfaces.This composite film was fabricated through an electrodeposition process followed by a thermal annealing procedure to achieve enhanced EMI shielding performance along with improved electrothermal and photothermal properties.The strategically designed sandwich structure allows the rough surface of the upper α-Fe_(2)O_(3)layer to not only improve the impedance mismatch between free space and the composite film,facilitating the penetration of incident electromagnetic(EM)waves into the film and promoting increased EM absorption rather than reflection,but also to enhance electrical conductivity,thereby improving electron mobility and density.Consequently,the average total shielding effectiveness(SE)of the CNT/Fe_(16)-300 composite demonstrates remarkable EMI shielding effectiveness(EMI SE:56.8 dB).Furthermore,the alteration in the absorption-to-reflection ratio(A/R)signifies a transition in the EMI shielding mechanism from reflection(0.69 for the pristine CNT film)to absorption(1.86 for the CNT/Fe_(16)-300)with the incremental deposition of α-Fe_(2)O_(3)nanoparticles.This work presents a feasible manufacturing approach for developing composite films with a sandwich structure that exhibits absorption-dominant EMI shielding capabilities,contributing to advancements in thermal management and multifunctional electromagnetic shielding applications.
