The fabrication of a dynamic threshold-2T0C(DT-2T0C) DRAM cell incorporating a ZnO charge-trap layer in the write transistor has been successfully achieved, addressing the negative hold voltage(V_(HOLD)) issue of conv...The fabrication of a dynamic threshold-2T0C(DT-2T0C) DRAM cell incorporating a ZnO charge-trap layer in the write transistor has been successfully achieved, addressing the negative hold voltage(V_(HOLD)) issue of conventional 2T0C DRAM cells using oxide channel layers. The proposed device facilitates dynamic modulation of turn-on voltage(V_(ON)) through an additional SET operation, allowing V_(ON) to shift above 0 V. The retention time in SET operation was extended to 10^(4) s by optimizing the tunneling layer deposition conditions. The device characterization revealed a significant correlation between V_(ON) and both the WRITE speed and the retention properties of the DT-2T0C, verifying the trade-off between WRITE time and retention time. A long retention time over 1000 s was achieved, even under VHOLD of 0 V.展开更多
红外目标识别系统中 ,需要实时采集红外传感器的图像数据。本文描述了一种基于 CPCI总线的红外图像数据采集卡。此卡采用 CPCI总线控制器中 F IF O通道的 DMA方式进行高速图像数据传输 ,保证了数据传输的实时性和准确性 ,满足了系统对...红外目标识别系统中 ,需要实时采集红外传感器的图像数据。本文描述了一种基于 CPCI总线的红外图像数据采集卡。此卡采用 CPCI总线控制器中 F IF O通道的 DMA方式进行高速图像数据传输 ,保证了数据传输的实时性和准确性 ,满足了系统对大数据量的存储要求。此采集电路对于多种红外传感器具有良好的兼容性 ,在实地采集数据中得到了良好的原始红外图像数据。展开更多
基金supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (RS-2024-00334190)。
文摘The fabrication of a dynamic threshold-2T0C(DT-2T0C) DRAM cell incorporating a ZnO charge-trap layer in the write transistor has been successfully achieved, addressing the negative hold voltage(V_(HOLD)) issue of conventional 2T0C DRAM cells using oxide channel layers. The proposed device facilitates dynamic modulation of turn-on voltage(V_(ON)) through an additional SET operation, allowing V_(ON) to shift above 0 V. The retention time in SET operation was extended to 10^(4) s by optimizing the tunneling layer deposition conditions. The device characterization revealed a significant correlation between V_(ON) and both the WRITE speed and the retention properties of the DT-2T0C, verifying the trade-off between WRITE time and retention time. A long retention time over 1000 s was achieved, even under VHOLD of 0 V.
