Gallium oxide(Ga_(2)O_(3))is a promising material for next-generation power devices due to its ultrawide bandgap and extremely high critical electric field strength;however,the strong anisotropy and cleavage tendency ...Gallium oxide(Ga_(2)O_(3))is a promising material for next-generation power devices due to its ultrawide bandgap and extremely high critical electric field strength;however,the strong anisotropy and cleavage tendency of Ga_(2)O_(3)pose significant challenges for high-precision surface processing.In this work,a systematic study was conducted through tribological analysis of monocrystalline(001)β-Ga_(2)O_(3).Initially,reciprocal sliding tests were conducted onβ-Ga_(2)O_(3)along different crystallographic directions,[100]and[010].The results revealed that the[100]direction was more wear resistant,while the[010]direction was more prone to failure.Indentation experiments on(001)β-Ga_(2)O_(3)showed extensive slip and cleavage cracking along different crystallographic orientations,indicating that mechanical wear might dominate the wear mode of this material.Subsequently,sliding tests under various environmental conditions revealed that the wear rate was correlated with humidity.Additionally,β-Ga_(2)O_(3)exhibited time-dependent frictional behavior,with its coefficient of friction stabilizing around 0.1,0.5,and 0.9 at different stages during the wear test.These findings indicate that the frictional behavior of Ga_(2)O_(3)is closely linked to the state of its surface.This study provides critical insights into the tribological behavior of Ga_(2)O_(3)and offers guidance for ultraprecision machining of this material.展开更多
铟锡复合氧化物(ITO,Indium and Tin Oxide)膜是铟的主要应用领域。在其制备工艺中,产出大量的ITO废靶需回收处理。研究了硫化沉淀法分离ITO废靶硫酸浸出液中铟、锡的工艺。平衡计算证明了硫化沉淀分离铟、锡的可行性。试验研究了温度...铟锡复合氧化物(ITO,Indium and Tin Oxide)膜是铟的主要应用领域。在其制备工艺中,产出大量的ITO废靶需回收处理。研究了硫化沉淀法分离ITO废靶硫酸浸出液中铟、锡的工艺。平衡计算证明了硫化沉淀分离铟、锡的可行性。试验研究了温度、酸度及反应时间对分离过程的影响,正交试验得出最佳工艺条件:温度323 K,反应时间20 min,溶液起始酸度100 g H2SO4/L。在此条件下,除锡率可达100%,铟在渣中的损失率仅为0.47%。展开更多
基金financial support from the Shenzhen Key Laboratory of Intelligent Robotics Flexible and Manufacturing Systems(Grant No.ZDSYS20220527171403009)the Shenzhen Science and Technology Innovation Commission(Grant No.20231115111658002).
文摘Gallium oxide(Ga_(2)O_(3))is a promising material for next-generation power devices due to its ultrawide bandgap and extremely high critical electric field strength;however,the strong anisotropy and cleavage tendency of Ga_(2)O_(3)pose significant challenges for high-precision surface processing.In this work,a systematic study was conducted through tribological analysis of monocrystalline(001)β-Ga_(2)O_(3).Initially,reciprocal sliding tests were conducted onβ-Ga_(2)O_(3)along different crystallographic directions,[100]and[010].The results revealed that the[100]direction was more wear resistant,while the[010]direction was more prone to failure.Indentation experiments on(001)β-Ga_(2)O_(3)showed extensive slip and cleavage cracking along different crystallographic orientations,indicating that mechanical wear might dominate the wear mode of this material.Subsequently,sliding tests under various environmental conditions revealed that the wear rate was correlated with humidity.Additionally,β-Ga_(2)O_(3)exhibited time-dependent frictional behavior,with its coefficient of friction stabilizing around 0.1,0.5,and 0.9 at different stages during the wear test.These findings indicate that the frictional behavior of Ga_(2)O_(3)is closely linked to the state of its surface.This study provides critical insights into the tribological behavior of Ga_(2)O_(3)and offers guidance for ultraprecision machining of this material.
文摘铟锡复合氧化物(ITO,Indium and Tin Oxide)膜是铟的主要应用领域。在其制备工艺中,产出大量的ITO废靶需回收处理。研究了硫化沉淀法分离ITO废靶硫酸浸出液中铟、锡的工艺。平衡计算证明了硫化沉淀分离铟、锡的可行性。试验研究了温度、酸度及反应时间对分离过程的影响,正交试验得出最佳工艺条件:温度323 K,反应时间20 min,溶液起始酸度100 g H2SO4/L。在此条件下,除锡率可达100%,铟在渣中的损失率仅为0.47%。
