The anomalous phenomenon of generation current ICD in the lightly doped drain （LDD） nMOSFET measured under the drain bias VD-step mode is reported. We propose an assumption of activated （A） and frozen （F） traps ...The anomalous phenomenon of generation current ICD in the lightly doped drain （LDD） nMOSFET measured under the drain bias VD-step mode is reported. We propose an assumption of activated （A） and frozen （F） traps for the VD-step mode： The A traps contributes to ICD while the F process can make them lose the roles as generation centers. The A and F regions can form the F-A region. The comparison of the F and A regions decides the role of the F-A region. The experiments confirm the assumption.展开更多
文摘The anomalous phenomenon of generation current ICD in the lightly doped drain （LDD） nMOSFET measured under the drain bias VD-step mode is reported. We propose an assumption of activated （A） and frozen （F） traps for the VD-step mode： The A traps contributes to ICD while the F process can make them lose the roles as generation centers. The A and F regions can form the F-A region. The comparison of the F and A regions decides the role of the F-A region. The experiments confirm the assumption.
