We examine an amorphous oxide semiconductor(AOS)of ZnRhCuO.The a-ZnRhCuO films are deposited at room temperature,having a high amorphous quality with smooth surface,uniform thickness and evenly distributed elements,as...We examine an amorphous oxide semiconductor(AOS)of ZnRhCuO.The a-ZnRhCuO films are deposited at room temperature,having a high amorphous quality with smooth surface,uniform thickness and evenly distributed elements,as well as a high visible transmittance above 87%with a wide bandgap of 3.12 eV.Using a-ZnRhCuO films as active layers,thin-film transistors(TFTs)and gas sensors are fabricated.The TFT behaviors demonstrate the p-type nature of a-ZnRhCuO channel,with an on-to-off current ratio of^1×10^3 and field-effect mobility of0.079 cm^2 V^-1s^-1.The behaviors of gas sensors also prove that the a-ZnRhCuO films are of p-type conductivity.Our achievements relating to p-type a-ZnRhCuO films at room temperature with TFT devices may pave the way to practical applications of AOSs in transparent flexible electronics.展开更多
基金Supported by the National Natural Science Foundation of China(Grant No.51741209)the Zhejiang Provincial Natural Science Foundation of China(Grant Nos.LR16F040001 and LGG19F040005)。
文摘We examine an amorphous oxide semiconductor(AOS)of ZnRhCuO.The a-ZnRhCuO films are deposited at room temperature,having a high amorphous quality with smooth surface,uniform thickness and evenly distributed elements,as well as a high visible transmittance above 87%with a wide bandgap of 3.12 eV.Using a-ZnRhCuO films as active layers,thin-film transistors(TFTs)and gas sensors are fabricated.The TFT behaviors demonstrate the p-type nature of a-ZnRhCuO channel,with an on-to-off current ratio of^1×10^3 and field-effect mobility of0.079 cm^2 V^-1s^-1.The behaviors of gas sensors also prove that the a-ZnRhCuO films are of p-type conductivity.Our achievements relating to p-type a-ZnRhCuO films at room temperature with TFT devices may pave the way to practical applications of AOSs in transparent flexible electronics.