摘要
本文首次实现了具有高复合表面的磁敏半导体器件的数值模拟;探讨了适合于数值模拟的磁敏半导体器件的边界条件及基本方程的定标方法。所得结果与实验数据基本相符,可以说明器件的内部机理,对磁敏器件的优化设计有指导意义。
A special magnetodiode with high recombination rate surface has been modeled for the firsttime. Boundary conditions and scaling method which are proper for numerical modeling ofsemiconductor magnetic field sensitive devices have been put forward. Our results are in agreementwith the experimental data, and are very useful for the optimization of semiconductormagnetic field sensitive devices.
关键词
磁敏二极管
数值模拟
磁敏器件
Magnetic sensor
Magnetodiode
Numerical modeling
