Based on the diffusion actuion of gallium in silicon and SiO2 ,a diffusion model of gallium doping in bare silicon system and SiO2/Si system is first presentd in this paper ,the gallium doping effect in the two system...Based on the diffusion actuion of gallium in silicon and SiO2 ,a diffusion model of gallium doping in bare silicon system and SiO2/Si system is first presentd in this paper ,the gallium doping effect in the two systems is analyzed theoretically .Experiments and applications have proved that the use of the open-tube gallium deffusion in SiO2/Si system can substantially improve diffusion quality and device characteristics .展开更多
文摘Based on the diffusion actuion of gallium in silicon and SiO2 ,a diffusion model of gallium doping in bare silicon system and SiO2/Si system is first presentd in this paper ,the gallium doping effect in the two systems is analyzed theoretically .Experiments and applications have proved that the use of the open-tube gallium deffusion in SiO2/Si system can substantially improve diffusion quality and device characteristics .
