摘要
Based on the diffusion actuion of gallium in silicon and SiO2 ,a diffusion model of gallium doping in bare silicon system and SiO2/Si system is first presentd in this paper ,the gallium doping effect in the two systems is analyzed theoretically .Experiments and applications have proved that the use of the open-tube gallium deffusion in SiO2/Si system can substantially improve diffusion quality and device characteristics .
Based on the diffusion actuion of gallium in silicon and SiO2 ,a diffusion model of gallium doping in bare silicon system and SiO_2/Si system is first presentd in this paper ,the gallium doping effect in the two systems is analyzed theoretically .Experiments and applications have proved that the use of the open-tube gallium deffusion in SiO2/Si system can substantially improve diffusion quality and device characteristics .
出处
《物理化学学报》
SCIE
CAS
CSCD
北大核心
1997年第2期153-157,共5页
Acta Physico-Chimica Sinica
基金
山东省科委资助
关键词
开管扩镓
镓
硅系
掺杂效应
Open-tube diffusion, Bare silicon system, SiO_2/Si system, Doping effect
