A simple and environmentally friendly method is described for the efficient conversion of alkyl halide to alkyl thiocyanate using tetrabutylammonium bromide （TBAB） as a phase transfer catalyst. The reactions occur i...A simple and environmentally friendly method is described for the efficient conversion of alkyl halide to alkyl thiocyanate using tetrabutylammonium bromide （TBAB） as a phase transfer catalyst. The reactions occur in water and furnish the corresponding alkyl thiocyanate in high yields. No evidence for the formation of isothiocyanates as by-product of the reaction was observed and the products were obtained in pure form without further purification.展开更多
Asymmetrically substituted phthalocyanines with sulfur-containing substituents for fabrication of self- assembled monolayers were synthesized. Phthalocyanine 7, bearing a disulfide group, was synthesized from phthaloc...Asymmetrically substituted phthalocyanines with sulfur-containing substituents for fabrication of self- assembled monolayers were synthesized. Phthalocyanine 7, bearing a disulfide group, was synthesized from phthalocyanine with a hydroxyl group, which was prepared via mixed condensation of the corresponding substituted phthalonitriles. Phthalocyanine 10, bearing an acetyl protected thiol group, was synthesized through the Pd-catalyzed coupling reaction of an iodophthalocyanine. Their self- assembling behavior on gold substrates was further studied by UV-vis spectroscopy.展开更多
Tile phase change material of Ge-doped Sb2 Te3 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb2Te3. Ge0.11Sb2Te3 alloys are considered to be a potential candidate...Tile phase change material of Ge-doped Sb2 Te3 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb2Te3. Ge0.11Sb2Te3 alloys are considered to be a potential candidate for phase change random access memories, as proved by a higher crystallization temperature, a better data retention ability, and a faster switching speed in comparison with those of Ge2Sb2 Tes. In addition, Ge0.11Sb2 Te3 presents extremely rapid reverse switching speed （lOns）, and up to 105 programming cycles are obtained with stable set and reset resistances.展开更多
基金Partial support for this work by Chamran University Research Council is gratefully acknowledged.
文摘A simple and environmentally friendly method is described for the efficient conversion of alkyl halide to alkyl thiocyanate using tetrabutylammonium bromide （TBAB） as a phase transfer catalyst. The reactions occur in water and furnish the corresponding alkyl thiocyanate in high yields. No evidence for the formation of isothiocyanates as by-product of the reaction was observed and the products were obtained in pure form without further purification.
基金supported by the NSFC(Nos.50973011 and 20702004)
文摘Asymmetrically substituted phthalocyanines with sulfur-containing substituents for fabrication of self- assembled monolayers were synthesized. Phthalocyanine 7, bearing a disulfide group, was synthesized from phthalocyanine with a hydroxyl group, which was prepared via mixed condensation of the corresponding substituted phthalonitriles. Phthalocyanine 10, bearing an acetyl protected thiol group, was synthesized through the Pd-catalyzed coupling reaction of an iodophthalocyanine. Their self- assembling behavior on gold substrates was further studied by UV-vis spectroscopy.
基金Supported by the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No XDA09020402the National Key Basic Research Program of China under Grant Nos 2013CBA01900,2010CB934300,2011CBA00607 and2011CB932804+2 种基金the National Integrate Circuit Research Program of China under Grant No 2009ZX02023-003the National Natural Science Foundation of China under Grant Nos 61176122,61106001,61261160500 and 61376006the Science and Technology Council of Shanghai under Grant Nos 12nm0503701,12QA1403900,13ZR1447200 and 13DZ2295700
文摘Tile phase change material of Ge-doped Sb2 Te3 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb2Te3. Ge0.11Sb2Te3 alloys are considered to be a potential candidate for phase change random access memories, as proved by a higher crystallization temperature, a better data retention ability, and a faster switching speed in comparison with those of Ge2Sb2 Tes. In addition, Ge0.11Sb2 Te3 presents extremely rapid reverse switching speed （lOns）, and up to 105 programming cycles are obtained with stable set and reset resistances.
