This study systematically investigated the influence of deposition rate on the structure,broadband opti⁃cal properties(1.0-13.0μm),and stress characteristics of Germanium(Ge)films.Additionally,a method for enhancing ...This study systematically investigated the influence of deposition rate on the structure,broadband opti⁃cal properties(1.0-13.0μm),and stress characteristics of Germanium(Ge)films.Additionally,a method for enhancing the performance of infrared filters based on rate-modulated deposition of Ge films was proposed.The optical absorption of Ge films in the short-wave infrared(SWIR)and long-wave infrared(LWIR)bands can be effectively reduced by modulating the deposition rate.As the deposition rate increases,the Ge films maintain an amorphous structure.The optical constants of the films in the 1.0-2.5μm and 2.5-13.0μm bands were precisely determined using the Cody-Lorentz model and the classical Lorentz oscillator model,respectively.Notably,high⁃er deposition rates result in a gradual increase in the refractive index.The extinction coefficient increases with the deposition rate in the SWIR region,attributed to the widening of the Urbach tail,while it decreases in the LWIR region due to the reduced absorption caused by the Ge-O stretching mode.Additionally,the films exhibit a tensile stress that decreases with increasing deposition rate.Finally,the effectiveness of the proposed fabrication method for an infrared filter with Ge films deposited at an optimized rate was demonstrated through practical examples.This work provides theoretical and technical support for the application of Ge films in high-performance infrared filters.展开更多
BaFe_(12)O_(19)(BaM)thin films with thicknesses ranging from 15 nm–200 nm were deposited on Al_(2)O_(3)(0001)substrates by pulsed laser deposition(PLD).X-ray diffraction patterns show that a buffer layer with a thick...BaFe_(12)O_(19)(BaM)thin films with thicknesses ranging from 15 nm–200 nm were deposited on Al_(2)O_(3)(0001)substrates by pulsed laser deposition(PLD).X-ray diffraction patterns show that a buffer layer with a thickness of nearly 60 nm forms on the substrate,and then a c-axis perpendicularly oriented Ba M thin film grows on the buffer layer.Atomic force microscopy results indicate that the Ba M thin film exhibits a spiral island growth mode on the buffer layer.Magnetic hysteresis loop results confirm that the buffer layer exhibits no significant magnetic anisotropy,while the Ba M thin film exhibits perpendicular magnetic anisotropy.The out-of-plane coercivity decreases with increasing Ba M thin-film thickness due to the combined effect of grain size growth and lattice strain relaxation.The 200 nm thick film exhibits optimum magnetic properties with M_(s)=319 emu/cm^(3) and H_(c)=1546 Oe.展开更多
基金Supported by the National Natural Science Foundation of China(62275053,62275256)the National key Research and Development Program of China(2021YFB3701500)+1 种基金the Youth Innovation Promotion Association of the Chinese Academy of Sciences(2023248)the Eastern Talent Plan Youth Project 2022,the Shanghai Key Laboratory of Optical Coatings and Spectral Modulation(23dz2260500).
文摘This study systematically investigated the influence of deposition rate on the structure,broadband opti⁃cal properties(1.0-13.0μm),and stress characteristics of Germanium(Ge)films.Additionally,a method for enhancing the performance of infrared filters based on rate-modulated deposition of Ge films was proposed.The optical absorption of Ge films in the short-wave infrared(SWIR)and long-wave infrared(LWIR)bands can be effectively reduced by modulating the deposition rate.As the deposition rate increases,the Ge films maintain an amorphous structure.The optical constants of the films in the 1.0-2.5μm and 2.5-13.0μm bands were precisely determined using the Cody-Lorentz model and the classical Lorentz oscillator model,respectively.Notably,high⁃er deposition rates result in a gradual increase in the refractive index.The extinction coefficient increases with the deposition rate in the SWIR region,attributed to the widening of the Urbach tail,while it decreases in the LWIR region due to the reduced absorption caused by the Ge-O stretching mode.Additionally,the films exhibit a tensile stress that decreases with increasing deposition rate.Finally,the effectiveness of the proposed fabrication method for an infrared filter with Ge films deposited at an optimized rate was demonstrated through practical examples.This work provides theoretical and technical support for the application of Ge films in high-performance infrared filters.
文摘BaFe_(12)O_(19)(BaM)thin films with thicknesses ranging from 15 nm–200 nm were deposited on Al_(2)O_(3)(0001)substrates by pulsed laser deposition(PLD).X-ray diffraction patterns show that a buffer layer with a thickness of nearly 60 nm forms on the substrate,and then a c-axis perpendicularly oriented Ba M thin film grows on the buffer layer.Atomic force microscopy results indicate that the Ba M thin film exhibits a spiral island growth mode on the buffer layer.Magnetic hysteresis loop results confirm that the buffer layer exhibits no significant magnetic anisotropy,while the Ba M thin film exhibits perpendicular magnetic anisotropy.The out-of-plane coercivity decreases with increasing Ba M thin-film thickness due to the combined effect of grain size growth and lattice strain relaxation.The 200 nm thick film exhibits optimum magnetic properties with M_(s)=319 emu/cm^(3) and H_(c)=1546 Oe.
