BaFe_(12)O_(19)(BaM)thin films with thicknesses ranging from 15 nm–200 nm were deposited on Al_(2)O_(3)(0001)substrates by pulsed laser deposition(PLD).X-ray diffraction patterns show that a buffer layer with a thick...BaFe_(12)O_(19)(BaM)thin films with thicknesses ranging from 15 nm–200 nm were deposited on Al_(2)O_(3)(0001)substrates by pulsed laser deposition(PLD).X-ray diffraction patterns show that a buffer layer with a thickness of nearly 60 nm forms on the substrate,and then a c-axis perpendicularly oriented Ba M thin film grows on the buffer layer.Atomic force microscopy results indicate that the Ba M thin film exhibits a spiral island growth mode on the buffer layer.Magnetic hysteresis loop results confirm that the buffer layer exhibits no significant magnetic anisotropy,while the Ba M thin film exhibits perpendicular magnetic anisotropy.The out-of-plane coercivity decreases with increasing Ba M thin-film thickness due to the combined effect of grain size growth and lattice strain relaxation.The 200 nm thick film exhibits optimum magnetic properties with M_(s)=319 emu/cm^(3) and H_(c)=1546 Oe.展开更多
文摘BaFe_(12)O_(19)(BaM)thin films with thicknesses ranging from 15 nm–200 nm were deposited on Al_(2)O_(3)(0001)substrates by pulsed laser deposition(PLD).X-ray diffraction patterns show that a buffer layer with a thickness of nearly 60 nm forms on the substrate,and then a c-axis perpendicularly oriented Ba M thin film grows on the buffer layer.Atomic force microscopy results indicate that the Ba M thin film exhibits a spiral island growth mode on the buffer layer.Magnetic hysteresis loop results confirm that the buffer layer exhibits no significant magnetic anisotropy,while the Ba M thin film exhibits perpendicular magnetic anisotropy.The out-of-plane coercivity decreases with increasing Ba M thin-film thickness due to the combined effect of grain size growth and lattice strain relaxation.The 200 nm thick film exhibits optimum magnetic properties with M_(s)=319 emu/cm^(3) and H_(c)=1546 Oe.
