The monocrystalline LiNbO_(3)(LN)and LiTaO_(3)(LT)plates have been qualified as a kind of material platform for high performance RF filter that is considerable for the 5G communication.LN and LT thin films are usually...The monocrystalline LiNbO_(3)(LN)and LiTaO_(3)(LT)plates have been qualified as a kind of material platform for high performance RF filter that is considerable for the 5G communication.LN and LT thin films are usually transferred on handle wafers by combining ion-slicing and wafer bonding technique to form a piezoelectric on insulator(POI)substrate.The ion implantation is a key process and the implantation-induced strain is essential for the layer transfer.Here,we reported the strain profile of ion implanted rotated Y-cut LN and LT.The ion implantation generates the out-of-plane tensile strain of the sample surface and(006)plane,while both the tensile and compressive strain are observed on the(030)plane.The implanted ions redistributed due to the anisotropy of LN and LT,and induce the main tensile normal to the(006)plane.Meanwhile,the(030)planes are contracted due to the Poisson effect with the interstitial ions disturbing and mainly show a compressive strain profile.展开更多
We show the structural and optical properties of non-polar a-plane GaN epitaxial films modified by Si ion implantation.Upon gradually raising Si fluences from 5×10^(13)cm^(-2)to 5×10^(15)cm^(-2),the n-type d...We show the structural and optical properties of non-polar a-plane GaN epitaxial films modified by Si ion implantation.Upon gradually raising Si fluences from 5×10^(13)cm^(-2)to 5×10^(15)cm^(-2),the n-type dopant concentration gradually increases from 4.6×10^(18)cm^(-2)to 4.5×10^(20)cm^(-2),while the generated vacancy density accordingly raises from 3.7×10^(13)cm^(-2)to 3.8×10^(15)cm^(-2).Moreover,despite that the implantation enhances structural disorder,the epitaxial structure of the implanted region is still well preserved which is confirmed by Rutherford backscattering channeling spectrometry measurements.The monotonical uniaxial lattice expansion along the a direction(out-of-plane direction)is observed as a function of fluences till 1×10^(15)cm^(-2),which ceases at the overdose of 5×10^(15)cm^(-2)due to the partial amorphization in the surface region.Upon raising irradiation dose,a yellow emission in the as-grown sample is gradually quenched,probably due to the irradiation-induced generation of non-radiative recombination centers.展开更多
基金supported by the National Key Research and Development Program of China(Grant No.2019YFB1803902)the National Natural Science Foundation of China(Grant Nos.11905282,61874128,61851406,11705262,and 6187407)+4 种基金the Frontier Science Key Program of CAS(Grant Nos.QYZDY-SSWJSC032 and ZDBS-LY-JSC009)Chinese-Austrian Cooperative Research and Development Project(Grant No.GJHZ201950)the Program of Shanghai Academic Research Leader(Grant No.19XD1404600)K.C.Wong Education Foundation(Grant No.GJTD-2019-11),Shanghai Sailing Program(Grant Nos.19YF1456200 and 19YF1456400)Shanghai Science and Technology Innovation Action Plan Program(Grant No.19XD1404600)。
文摘The monocrystalline LiNbO_(3)(LN)and LiTaO_(3)(LT)plates have been qualified as a kind of material platform for high performance RF filter that is considerable for the 5G communication.LN and LT thin films are usually transferred on handle wafers by combining ion-slicing and wafer bonding technique to form a piezoelectric on insulator(POI)substrate.The ion implantation is a key process and the implantation-induced strain is essential for the layer transfer.Here,we reported the strain profile of ion implanted rotated Y-cut LN and LT.The ion implantation generates the out-of-plane tensile strain of the sample surface and(006)plane,while both the tensile and compressive strain are observed on the(030)plane.The implanted ions redistributed due to the anisotropy of LN and LT,and induce the main tensile normal to the(006)plane.Meanwhile,the(030)planes are contracted due to the Poisson effect with the interstitial ions disturbing and mainly show a compressive strain profile.
基金the Key-Area Research and Development Program of Guangdong Province,China(Grant Nos.2019B010132001,2020B010174003,and 2019B121204004)the Basic and Application Basic Research Foundation of Guangdong Province,China(Grant Nos.2020A1515110891 and 2019A1515111053)the Fund from the Ion Beam Center(IBC)at HZDR.
文摘We show the structural and optical properties of non-polar a-plane GaN epitaxial films modified by Si ion implantation.Upon gradually raising Si fluences from 5×10^(13)cm^(-2)to 5×10^(15)cm^(-2),the n-type dopant concentration gradually increases from 4.6×10^(18)cm^(-2)to 4.5×10^(20)cm^(-2),while the generated vacancy density accordingly raises from 3.7×10^(13)cm^(-2)to 3.8×10^(15)cm^(-2).Moreover,despite that the implantation enhances structural disorder,the epitaxial structure of the implanted region is still well preserved which is confirmed by Rutherford backscattering channeling spectrometry measurements.The monotonical uniaxial lattice expansion along the a direction(out-of-plane direction)is observed as a function of fluences till 1×10^(15)cm^(-2),which ceases at the overdose of 5×10^(15)cm^(-2)due to the partial amorphization in the surface region.Upon raising irradiation dose,a yellow emission in the as-grown sample is gradually quenched,probably due to the irradiation-induced generation of non-radiative recombination centers.
