摘要
We show the structural and optical properties of non-polar a-plane GaN epitaxial films modified by Si ion implantation.Upon gradually raising Si fluences from 5×10^(13)cm^(-2)to 5×10^(15)cm^(-2),the n-type dopant concentration gradually increases from 4.6×10^(18)cm^(-2)to 4.5×10^(20)cm^(-2),while the generated vacancy density accordingly raises from 3.7×10^(13)cm^(-2)to 3.8×10^(15)cm^(-2).Moreover,despite that the implantation enhances structural disorder,the epitaxial structure of the implanted region is still well preserved which is confirmed by Rutherford backscattering channeling spectrometry measurements.The monotonical uniaxial lattice expansion along the a direction(out-of-plane direction)is observed as a function of fluences till 1×10^(15)cm^(-2),which ceases at the overdose of 5×10^(15)cm^(-2)due to the partial amorphization in the surface region.Upon raising irradiation dose,a yellow emission in the as-grown sample is gradually quenched,probably due to the irradiation-induced generation of non-radiative recombination centers.
作者
Lijie Huang
Lin Li
Zhen Shang
Mao Wang
Junjie Kang
Wei Luo
Zhiwen Liang
Slawomir Prucnal
Ulrich Kentsch
Yanda Ji
Fabi Zhang
Qi Wang
Ye Yuan
Qian Sun
Shengqiang Zhou
Xinqiang Wang
黄黎杰;李琳;尚震;王茂;康俊杰;罗巍;梁智文;Slawomir Prucnal;Ulrich Kentsch;吉彦达;张法碧;王琦;袁冶;孙钱;周生强;王新强(Songshan Lake Materials Laboratory,Dongguan 523808,China;Helmholtz-Zentrum Dresden-Rossendorf,Institute of Ion Beam Physics and Materials Research,01314,Dresden,Germany;College of Mathematics and Physics,Beijing University of Chemical Technology,Beijing 100029,China;Department of Applied Physics,College of Science,Nanjing University of Aeronautics and Astronautics,Nanjing 211106,China;Dongguan Institute of Optoelectronics,Peking University,Dongguan 523808,China;Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences(CAS),Suzhou 215123,China;Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology,Guilin 541004,China)
基金
the Key-Area Research and Development Program of Guangdong Province,China(Grant Nos.2019B010132001,2020B010174003,and 2019B121204004)
the Basic and Application Basic Research Foundation of Guangdong Province,China(Grant Nos.2020A1515110891 and 2019A1515111053)
the Fund from the Ion Beam Center(IBC)at HZDR.
