The dynamic avalanche effect is a critical factor influencing the performance and reliability of the field-stop insulated gate bipolar transistors(FS-IGBT).Unclamped inductive switching(UIS)is the primary method for t...The dynamic avalanche effect is a critical factor influencing the performance and reliability of the field-stop insulated gate bipolar transistors(FS-IGBT).Unclamped inductive switching(UIS)is the primary method for testing the dynamic avalanche capability of FS-IGBTs.Numerous studies have demonstrated that factors such as device structure,avalanche-generating current filaments,and electrical parameters influence the dynamic avalanche effect of the FS-IGBT.However,few studies have focused on enhancing the avalanche reliability of the FS-IGBT by adjusting circuit parameters during operation.In this paper,the dynamic avalanche effect of the FS-IGBT under UIS conditions is comprehensively investigated through a series of comparative experiments with varying circuit parameters,including bus voltage V_(DC),gate voltage V_(G),gate resistance R_(g),load inductance L,and temperature TC.Furthermore,a method to enhance the dynamic avalanche reliability of the FS-IGBT under UIS by optimizing circuit parameters is proposed.In practical applications,reducing gate voltage,increasing load inductance,and lowering temperature can effectively improve the dynamic avalanche capability of the FS-IGBT.展开更多
Online detection of insulation defects the decomposition products of SF_(6)plays a key role in ensuring the safe operation of the gas-insulated switchgear(GIS)equipment.The pristine TiO_(2)(101)modified by Ni cluster(...Online detection of insulation defects the decomposition products of SF_(6)plays a key role in ensuring the safe operation of the gas-insulated switchgear(GIS)equipment.The pristine TiO_(2)(101)modified by Ni cluster(1-3 Ni atoms)is used as a new gas-sensing material to study its gas-sensing characteristics to the characteristic decomposition products of SF_(6):SO2,SOF2,and SO2F2.Through density functional theory(DFT)calculation,we found that the modification of Ni clusters significantly improved the conductivity of pristine TiO_(2)(101)and the gas sensitivity of SF_(6)decomposition products.More importantly,the change of conductivity after gas adsorption lays a theoretical foundation for identifying the type and concentration of SF_(6)characteristic decomposition products and further judging the type of defects in GIS.展开更多
基金supported in part by the National Natural Science Foundation of China under Grant 62071073in part by the Fundamental Research Funds for Central Universities under Grant 2023CDJXY-041in part by the Foundation from Guangxi Key Laboratory of Optoelectronic Information Processing under Grant GD20201.
文摘The dynamic avalanche effect is a critical factor influencing the performance and reliability of the field-stop insulated gate bipolar transistors(FS-IGBT).Unclamped inductive switching(UIS)is the primary method for testing the dynamic avalanche capability of FS-IGBTs.Numerous studies have demonstrated that factors such as device structure,avalanche-generating current filaments,and electrical parameters influence the dynamic avalanche effect of the FS-IGBT.However,few studies have focused on enhancing the avalanche reliability of the FS-IGBT by adjusting circuit parameters during operation.In this paper,the dynamic avalanche effect of the FS-IGBT under UIS conditions is comprehensively investigated through a series of comparative experiments with varying circuit parameters,including bus voltage V_(DC),gate voltage V_(G),gate resistance R_(g),load inductance L,and temperature TC.Furthermore,a method to enhance the dynamic avalanche reliability of the FS-IGBT under UIS by optimizing circuit parameters is proposed.In practical applications,reducing gate voltage,increasing load inductance,and lowering temperature can effectively improve the dynamic avalanche capability of the FS-IGBT.
基金National Natural Science Foundation of China,Grant/Award Number:51907165Chongqing Higher Education Teaching Reform Research Project,Grant/Award Number:213065Southwest University Students Innovation and Entrepreneurship Training Project,Grant/Award Number:P202110635063。
文摘Online detection of insulation defects the decomposition products of SF_(6)plays a key role in ensuring the safe operation of the gas-insulated switchgear(GIS)equipment.The pristine TiO_(2)(101)modified by Ni cluster(1-3 Ni atoms)is used as a new gas-sensing material to study its gas-sensing characteristics to the characteristic decomposition products of SF_(6):SO2,SOF2,and SO2F2.Through density functional theory(DFT)calculation,we found that the modification of Ni clusters significantly improved the conductivity of pristine TiO_(2)(101)and the gas sensitivity of SF_(6)decomposition products.More importantly,the change of conductivity after gas adsorption lays a theoretical foundation for identifying the type and concentration of SF_(6)characteristic decomposition products and further judging the type of defects in GIS.
