We have measured the time-resolved photoluminescence spectra of several In_(x)Ga_(1-x)As/GaAs single quantum well samples at 77K.The different temporal behaviors of the photoluminescence(PL)from the GaAs layer and the...We have measured the time-resolved photoluminescence spectra of several In_(x)Ga_(1-x)As/GaAs single quantum well samples at 77K.The different temporal behaviors of the photoluminescence(PL)from the GaAs layer and the excitonic emission from the In_(x)Ga_(1-x)As well were obtained.The lifetime for the exciton in the In_(x)Ga_(1-x)As well were determined to be 110-170ps.The trapping efficiency of the well to the carriers was about 80%.展开更多
文摘We have measured the time-resolved photoluminescence spectra of several In_(x)Ga_(1-x)As/GaAs single quantum well samples at 77K.The different temporal behaviors of the photoluminescence(PL)from the GaAs layer and the excitonic emission from the In_(x)Ga_(1-x)As well were obtained.The lifetime for the exciton in the In_(x)Ga_(1-x)As well were determined to be 110-170ps.The trapping efficiency of the well to the carriers was about 80%.
