The advantages of on-chip integrated photodetectors,such as miniaturization,high integration,and reliability,make them an indispensable and important part of electronic devices and systems.Herein,we experimentally exh...The advantages of on-chip integrated photodetectors,such as miniaturization,high integration,and reliability,make them an indispensable and important part of electronic devices and systems.Herein,we experimentally exhibited a monolithically integrated ultraviolet photodetector utilizing GaN microcylinder epitaxial structure on Si wafer,with its photoresponse properties plasmonically boosted using Pt nanoparticles via specific sizes.When illuminated upon ultraviolet light at 0 V bias,the Pt/GaN device exhibits significant photovoltaic performances,including a peak responsivity of 200.1 mA W−1,external quantum efficiency of 65%,and other figures-of-merit.Finite element analysis and energy band theory confirm that the excellent photodetection properties of the Pt/GaN device are related to the strong plasmon absorption and the increase of hot electrons injected into the GaN conduction band,which considerably improves its photoresponse performance and robustness in application.To realize the multipurpose capability of the devices,we validated the application of Pt/GaN as turbidity sensing and achieved a resolution of up to 100 NTU.Moreover,the prepared devices can be used as optical data receivers for optical communication.These findings provide references for on-chip detectors to improve the overall system performance and promote the realization of more complex applications.展开更多
The achievement of electrically pumped lasers with smaller and more compact physical dimensions is expected to be crucial for future optical information processing,optical storage,and photonic integrated circuits.Howe...The achievement of electrically pumped lasers with smaller and more compact physical dimensions is expected to be crucial for future optical information processing,optical storage,and photonic integrated circuits.However,developing laser devices upon electrical injection remains challenging due to stability issues,significant non-radiative losses,and severe Joule heating effects.Herein,we exhibit an ultralow-threshold low-dimensional perovskite microlaser coated with Au nanoparticles(AuNPs),which enables the optimization of its lasing properties upon optical pumping synchronized with current injection at ambient temperature.The threshold value is considerably reduced to 8.6μJ/cm^(2),which is approximately 44%lower than that of the pristine one.The microlaser incorporates size-optimized AuNPs that simultaneously enhance perovskite's lasing performance and electrical properties,particularly enabling a current injection of approximately 2.98 kA/cm^(2).Besides,AuNPs can accelerate hot-carrier cooling in perovskites,thereby reducing non-radiative recombination losses and mitigating Joule heating effects.The microlaser thresholds show progressive reduction with increasing electrical assist fraction.This study underscores that the ultimate goal of realizing electrically driven perovskite microlasers may eventually become a reality,paving a promising avenue toward the further development of electrically pumped microlaser diodes.展开更多
Engineering the lasing-mode oscillations effectively within a laser cavity is a relatively updated attentive study and perplexing issue in the field of laser physics and applications. Herein, we report a realization o...Engineering the lasing-mode oscillations effectively within a laser cavity is a relatively updated attentive study and perplexing issue in the field of laser physics and applications. Herein, we report a realization of electrically driven single-mode microlaser, which is composed of gallium incorporated zinc oxide microwire (ZnO:Ga MW) with platinum nanoparticles (PtNPs, d ~ 130 nm) covering, a magnesium oxide (MgO) nanofilm, a Pt nanofilm, and a p-type GaN substrate. The laser cavity modes could resonate following the whispering-gallery mode (WGM) among the six side surfaces by total internal reflection, and the single-mode lasing wavelength is centered at 390.5 nm with a linewidth of about 0.18 nm. The cavity quality factor Q is evaluated to about 2169. In the laser structure, the usage of Pt and MgO buffer layers can be utilized to engineer the band alignment of ZnO:Ga/GaN heterojunction, optimize the p-n junction quality and increase the current injection. Thus, the well-designed device structure can seamlessly unite the electron-hole recombination region, the gain medium, and optical microresonator into the PtNPs@ZnO:Ga wire perfectly. Such a single MW microlaser is essentially single-mode regardless of the gain spectral bandwidth. To study the single-mode operation, PtNPs working as superabsorber can engineering the multimode lasing actions of ZnO:Ga MWs even if their dimensions are typically much larger than that of lasing wavelength. Our findings can provide a straightforward and effective scheme to develop single-mode microlaser devices based on one-dimensional wire semiconductors.展开更多
Low-power, flexible, and integrated photodetectors have attracted increasing attention due to their potential applications of photosensing, astronomy, communications, wearable electronics, etc. Herein, the samples of ...Low-power, flexible, and integrated photodetectors have attracted increasing attention due to their potential applications of photosensing, astronomy, communications, wearable electronics, etc. Herein, the samples of ZnO microwires having p-type(Sb-doped ZnO, ZnO:Sb) and n-type(Ga-doped ZnO, ZnO:Ga) conduction properties were synthesized individually. Sequentially, a p-n homojunction vertical structure photodiode involving a single ZnO:Sb microwire crossed with a ZnO:Ga microwire, which can detect ultraviolet light signals, was constructed.展开更多
基金supported by National Natural Science Foundation of China(NSFC)(12374257)Funding for Outstanding Doctoral Dissertation in NUAA(BCXJ24-22).
文摘The advantages of on-chip integrated photodetectors,such as miniaturization,high integration,and reliability,make them an indispensable and important part of electronic devices and systems.Herein,we experimentally exhibited a monolithically integrated ultraviolet photodetector utilizing GaN microcylinder epitaxial structure on Si wafer,with its photoresponse properties plasmonically boosted using Pt nanoparticles via specific sizes.When illuminated upon ultraviolet light at 0 V bias,the Pt/GaN device exhibits significant photovoltaic performances,including a peak responsivity of 200.1 mA W−1,external quantum efficiency of 65%,and other figures-of-merit.Finite element analysis and energy band theory confirm that the excellent photodetection properties of the Pt/GaN device are related to the strong plasmon absorption and the increase of hot electrons injected into the GaN conduction band,which considerably improves its photoresponse performance and robustness in application.To realize the multipurpose capability of the devices,we validated the application of Pt/GaN as turbidity sensing and achieved a resolution of up to 100 NTU.Moreover,the prepared devices can be used as optical data receivers for optical communication.These findings provide references for on-chip detectors to improve the overall system performance and promote the realization of more complex applications.
基金supported by the National Natural Science Foundation of China (12374257)the Outstanding Doctoral Dis-sertation in Nanjing University of Aeronautics and Astronautics (BCXJ23-15)+1 种基金the Interdisciplinary Innovation Fund for Doctoral Students of Nanjing University of Aeronautics and Astronautics (KXKCXJJ202406)the Postgraduate Research&Practice Innovation Program of Jiangsu Province (KYCX25_0638)。
文摘The achievement of electrically pumped lasers with smaller and more compact physical dimensions is expected to be crucial for future optical information processing,optical storage,and photonic integrated circuits.However,developing laser devices upon electrical injection remains challenging due to stability issues,significant non-radiative losses,and severe Joule heating effects.Herein,we exhibit an ultralow-threshold low-dimensional perovskite microlaser coated with Au nanoparticles(AuNPs),which enables the optimization of its lasing properties upon optical pumping synchronized with current injection at ambient temperature.The threshold value is considerably reduced to 8.6μJ/cm^(2),which is approximately 44%lower than that of the pristine one.The microlaser incorporates size-optimized AuNPs that simultaneously enhance perovskite's lasing performance and electrical properties,particularly enabling a current injection of approximately 2.98 kA/cm^(2).Besides,AuNPs can accelerate hot-carrier cooling in perovskites,thereby reducing non-radiative recombination losses and mitigating Joule heating effects.The microlaser thresholds show progressive reduction with increasing electrical assist fraction.This study underscores that the ultimate goal of realizing electrically driven perovskite microlasers may eventually become a reality,paving a promising avenue toward the further development of electrically pumped microlaser diodes.
基金the National Natural Science Foundation of China(Grant Nos.11974182 and 11874220)the Fundamental Research Funds for the Central Universities(NO.NC2022008).
文摘Engineering the lasing-mode oscillations effectively within a laser cavity is a relatively updated attentive study and perplexing issue in the field of laser physics and applications. Herein, we report a realization of electrically driven single-mode microlaser, which is composed of gallium incorporated zinc oxide microwire (ZnO:Ga MW) with platinum nanoparticles (PtNPs, d ~ 130 nm) covering, a magnesium oxide (MgO) nanofilm, a Pt nanofilm, and a p-type GaN substrate. The laser cavity modes could resonate following the whispering-gallery mode (WGM) among the six side surfaces by total internal reflection, and the single-mode lasing wavelength is centered at 390.5 nm with a linewidth of about 0.18 nm. The cavity quality factor Q is evaluated to about 2169. In the laser structure, the usage of Pt and MgO buffer layers can be utilized to engineer the band alignment of ZnO:Ga/GaN heterojunction, optimize the p-n junction quality and increase the current injection. Thus, the well-designed device structure can seamlessly unite the electron-hole recombination region, the gain medium, and optical microresonator into the PtNPs@ZnO:Ga wire perfectly. Such a single MW microlaser is essentially single-mode regardless of the gain spectral bandwidth. To study the single-mode operation, PtNPs working as superabsorber can engineering the multimode lasing actions of ZnO:Ga MWs even if their dimensions are typically much larger than that of lasing wavelength. Our findings can provide a straightforward and effective scheme to develop single-mode microlaser devices based on one-dimensional wire semiconductors.
基金Postgraduate Research&Practice Innovation Program of Jiangsu Province(KYCX23_0348)Funding for Outstanding Doctoral Dissertation in Nanjing University of Aeronautics and Astronautics(BCXJ22-14)+1 种基金Fundamental Research Funds for the Central Universities(NC2022008)National Natural Science Foundation of China(11974182,12374257)。
文摘Low-power, flexible, and integrated photodetectors have attracted increasing attention due to their potential applications of photosensing, astronomy, communications, wearable electronics, etc. Herein, the samples of ZnO microwires having p-type(Sb-doped ZnO, ZnO:Sb) and n-type(Ga-doped ZnO, ZnO:Ga) conduction properties were synthesized individually. Sequentially, a p-n homojunction vertical structure photodiode involving a single ZnO:Sb microwire crossed with a ZnO:Ga microwire, which can detect ultraviolet light signals, was constructed.
基金supported by the National Natural Science Foundation of China(11974182,12374257)the Fundamental Research Funds for the Central Universities(NC2022008)+1 种基金the Funding for Outstanding Doctoral Dissertation of Nanjing University of Aeronautics and Astronautics(NUAA)(BCXJ22-14)the Postgraduate Research&Practice Innovation Program of Jiangsu Province(KYCX22_0326)。
文摘高灵敏度的自驱动紫外探测器在许多应用中都大有可为.本研究提出了一种一维ZnO基同结光电探测器,它包括表面覆盖着Ag纳米线的锑掺杂ZnO微米线(AgNWs@ZnO:Sb MW)、MgO缓冲纳米层和ZnO薄膜.该探测器在0 V偏压下对紫外光非常敏感,其性能参数包括约7个量级的开关比、292.2 mA W^(-1)的响应度、6.9×10^(13)Jones的比探测率,以及微秒量级的快速响应速度(上升时间16.4μs,下降时间465.1μs).特别是10μW cm^(-2)的微弱紫外光时接近99.3%的外量子效率.此外,本文系统研究了MgO纳米薄膜和表面修饰AgNWs对探测器件性能增强的机理.作为自驱动光接收器,该光电二极管被进一步集成到能够实时传输信息的紫外通信系统中.此外,基于AgNWs@p-ZnO:Sb MW/i-MgO/n-ZnO的同质结9×9阵列显示出均匀的光响应分布,可用作具有良好空间分辨率的成像传感器.这项研究有望为设计高性能紫外光检测器提供一条具有低功耗和可大规模建造的途径.
