摘要
Although wide-bandgap semiconductors have emerged as a valuable class of deep-ultraviolet-sensitive materials,showing great potential for next-generation integrated devices,achieving high-performance deep-ultraviolet detectors without complicated designs at a low supply voltage and weak light intensity remains a significant challenge.Herein,we designed a new way to fabricate an ultrasensitive verticalstructured Ga2O3 photodetector with epitaxial oxygen-vacancy-rich In2O3 as the bottom conductive layer,which could realize the detection of rare weak deep-UV-light intensity(0.1μW cm^(−2))at a voltage below 5 V,also demonstrating a surge in responsivity(36 A W^(−1)at−4.8 V and 2.2 A W^(−1)at 4.8 V)and detectivity(2×10^(13) Jones at−4.8 V and 4.4×10^(13) Jones at 4.8 V)with ultrafast response of 0.64μs/47.68μs(rise/decay).The ultrathin(15 nm)Ga_(2)O_(3) layer and sophisticated band engineering,combined with suppression of the dark current through the interfacial oxygen vacancies on the In2O3 layer,enabled an enhancement of the detection performance of the detector at a low supply voltage and extremely low light intensity.These results provide a path towards highly sensitive,low-power-consumption and highly integrated deep-ultraviolet detection,beyond conventional ones.
基金
supported by the National Key R&D Program of China(2020YFA0406202)
National Natural Science Foundation of China(22090042,21971009 and 62204125)
Guangxi BaGui Scholars Special Funding
Fundamental Research Funds for the Central Universities,China(FRF-IDRY-GD21-03 and GJRC003).
