Stable Q-switched and mode-locked erbium-doped fiber lasers(EDFLs)are first demonstrated by using the novel layered palladium disulfide(PdS2),a new member of group 10 transition metal dichalcogenides(TMDs)-based satur...Stable Q-switched and mode-locked erbium-doped fiber lasers(EDFLs)are first demonstrated by using the novel layered palladium disulfide(PdS2),a new member of group 10 transition metal dichalcogenides(TMDs)-based saturable absorbers(SAs).Self-started Q-switched operation at 1567 nm was achieved with a threshold pump power of 50.6 mW.The modulation ranges of pulse duration and repetition rate were characterized as 12.6-4.5μs and 17.2-26.0 kHz,respectively.Meanwhile,a mode-locked EDFL was also obtained with a pump power threshold of 106.4 mW.The achieved pulse duration is 803 fs,corresponding to a center wavelength of 1565.8 nm and4.48 nm 3 dB bandwidth.To the best of our knowledge,the achieved pulse duration of the mode-locked EDFL in this work is the narrowest compared with all other group 10 TMD SA-based lasers.展开更多
We present an ultrasensitive ultraviolet （UV） detector based on a p-type ZnS nanoribbon （NR）/indium tin oxide （ITO） Schottky barrier diode （SBD）. The device exhibits a pseudo-photovoltaic behavior which can al...We present an ultrasensitive ultraviolet （UV） detector based on a p-type ZnS nanoribbon （NR）/indium tin oxide （ITO） Schottky barrier diode （SBD）. The device exhibits a pseudo-photovoltaic behavior which can allow the SBD to detect UV light irradiation with incident power of 6 × 10^-17 W （-85 photons/s on the NR） at room temperature, with excellent reproducibility and stability. The corresponding detectivity and photoconductive gain are calculated to be 3.1 × 10^20 cm.Hz1/2.W^-1 and 6.6 × 10^5, respectively. It is found that the presence of the trapping states at the p-ZnS NWITO interface plays a crucial role in determining the ultrahigh sensitivity of this nanoSBDs. Based on our theoretical calculation, even ultra-low photon fluxes on the order of several tens of photons could induce a significant change in interface potential and consequently cause a large photocurrent variation. The present study provides new opportunities for developiphigh-performance optoelectronic devices in the future.展开更多
基金Research Grants Council,University Grants Committee of Hong Kong,China(GRF 152109/16E Poly U B-Q52T)。
文摘Stable Q-switched and mode-locked erbium-doped fiber lasers(EDFLs)are first demonstrated by using the novel layered palladium disulfide(PdS2),a new member of group 10 transition metal dichalcogenides(TMDs)-based saturable absorbers(SAs).Self-started Q-switched operation at 1567 nm was achieved with a threshold pump power of 50.6 mW.The modulation ranges of pulse duration and repetition rate were characterized as 12.6-4.5μs and 17.2-26.0 kHz,respectively.Meanwhile,a mode-locked EDFL was also obtained with a pump power threshold of 106.4 mW.The achieved pulse duration is 803 fs,corresponding to a center wavelength of 1565.8 nm and4.48 nm 3 dB bandwidth.To the best of our knowledge,the achieved pulse duration of the mode-locked EDFL in this work is the narrowest compared with all other group 10 TMD SA-based lasers.
文摘We present an ultrasensitive ultraviolet （UV） detector based on a p-type ZnS nanoribbon （NR）/indium tin oxide （ITO） Schottky barrier diode （SBD）. The device exhibits a pseudo-photovoltaic behavior which can allow the SBD to detect UV light irradiation with incident power of 6 × 10^-17 W （-85 photons/s on the NR） at room temperature, with excellent reproducibility and stability. The corresponding detectivity and photoconductive gain are calculated to be 3.1 × 10^20 cm.Hz1/2.W^-1 and 6.6 × 10^5, respectively. It is found that the presence of the trapping states at the p-ZnS NWITO interface plays a crucial role in determining the ultrahigh sensitivity of this nanoSBDs. Based on our theoretical calculation, even ultra-low photon fluxes on the order of several tens of photons could induce a significant change in interface potential and consequently cause a large photocurrent variation. The present study provides new opportunities for developiphigh-performance optoelectronic devices in the future.
