Structural and optical properties of vertically aligned InAs quantum dots (QDs) were embedded in Al0.5Ga0.5As spacer layers. The aligned QDs were grown at 520℃ in the Stranski-Krastanow (S-K) growth mode of molecular...Structural and optical properties of vertically aligned InAs quantum dots (QDs) were embedded in Al0.5Ga0.5As spacer layers. The aligned QDs were grown at 520℃ in the Stranski-Krastanow (S-K) growth mode of molecular beam epitaxy. To impro ve QD characteristics, we employed a size- and density-controlled growth procedu re in the upper layers. Measurements by reflection high-energy electron diffract ion (RHEED) and atomic force microscopy (AFM) showed that both the size and dens ity of the QDs. The temperature dependence of the wavelength-integrated photolum inescence (PL) intensity revealed the InAs QD emission.展开更多
The Mg content of Zn1-xMgxO film grown on A-sapphire substrates by plasma-assisted molecular beam epitaxy is measured by inductively coupled plasma (ICP) and electronic probe microanalysis (EPMA). A theoretical model ...The Mg content of Zn1-xMgxO film grown on A-sapphire substrates by plasma-assisted molecular beam epitaxy is measured by inductively coupled plasma (ICP) and electronic probe microanalysis (EPMA). A theoretical model for analyzing the difference in the Mg content between Zn-rich and Zn-deficient conditions in the growth process is established, and the mathematical relation between Mg content and the temperature of the Mg cell is formulated under Zn-rich condition. The formula derived is proven to be correct by experiments.展开更多
基金This work was supported by the Scientific Research Foundation for the Returmed Overseas Chinese Scholars,Education Ministry of China.
文摘Structural and optical properties of vertically aligned InAs quantum dots (QDs) were embedded in Al0.5Ga0.5As spacer layers. The aligned QDs were grown at 520℃ in the Stranski-Krastanow (S-K) growth mode of molecular beam epitaxy. To impro ve QD characteristics, we employed a size- and density-controlled growth procedu re in the upper layers. Measurements by reflection high-energy electron diffract ion (RHEED) and atomic force microscopy (AFM) showed that both the size and dens ity of the QDs. The temperature dependence of the wavelength-integrated photolum inescence (PL) intensity revealed the InAs QD emission.
文摘The Mg content of Zn1-xMgxO film grown on A-sapphire substrates by plasma-assisted molecular beam epitaxy is measured by inductively coupled plasma (ICP) and electronic probe microanalysis (EPMA). A theoretical model for analyzing the difference in the Mg content between Zn-rich and Zn-deficient conditions in the growth process is established, and the mathematical relation between Mg content and the temperature of the Mg cell is formulated under Zn-rich condition. The formula derived is proven to be correct by experiments.
