As a typical in-memory computing hardware design, nonvolatile ternary content-addressable memories(TCAMs) enable the logic operation and data storage for high throughout in parallel big data processing. However,TCAM c...As a typical in-memory computing hardware design, nonvolatile ternary content-addressable memories(TCAMs) enable the logic operation and data storage for high throughout in parallel big data processing. However,TCAM cells based on conventional silicon-based devices suffer from structural complexity and large footprintlimitations. Here, we demonstrate an ultrafast nonvolatile TCAM cell based on the MoTe2/hBN/multilayergraphene (MLG) van der Waals heterostructure using a top-gated partial floating-gate field-effect transistor(PFGFET) architecture. Based on its ambipolar transport properties, the carrier type in the source/drain andcentral channel regions of the MoTe2 channel can be efficiently tuned by the control gate and top gate, respectively,enabling the reconfigurable operation of the device in either memory or FET mode. When working inthe memory mode, it achieves an ultrafast 60 ns programming/erase speed with a current on-off ratio of ∼105,excellent retention capability, and robust endurance. When serving as a reconfigurable transistor, unipolar p-typeand n-type FETs are obtained by adopting ultrafast 60 ns control-gate voltage pulses with different polarities.The monolithic integration of memory and logic within a single device enables the content-addressable memory(CAM) functionality. Finally, by integrating two PFGFETs in parallel, a TCAM cell with a high current ratioof ∼10^(5) between the match and mismatch states is achieved without requiring additional peripheral circuitry.These results provide a promising route for the design of high-performance TCAM devices for future in-memorycomputing applications.展开更多
Recent advances in strain engineering have enabled unprecedented control over quantum states in strongly correlated magnetic systems.However,nanoscale strain modulation of charge density waves(CDWs)and magnetically ex...Recent advances in strain engineering have enabled unprecedented control over quantum states in strongly correlated magnetic systems.However,nanoscale strain modulation of charge density waves(CDWs)and magnetically excited states,which is crucial for atomically precise strain engineering and practical spintronic applications,remains unexplored.Here,we report the nanoscale strain effects on CDWs and low-energy electronic states in the van der Waals antiferromagnetic metal GdTe_(3),utilizing scanning tunneling microscopy/spectroscopy.Lowtemperature cleavage introduces local strains,resulting in the formation of nanoscale wrinkles on the GdTe_(3)surface.Atomic displacement analysis reveals two distinct types of wrinkles:Wrinkle-I,originating from unidirectional strain,and Wrinkle-II,dominated by shear strain.In Wrinkle-I,the tensile strain enhances the CDW gap,while the compressive strain induces a single low-energy magnetic state.Wrinkle-II switches the orientation of CDW,leading to the formation of an associated CDW domain wall.In addition,three low-energy magnetic states that exhibit magnetic field-dependent shifts and intensity variations emerge within the CDW gap around Wrinkle-II,indicative of a strain-tuned coupling between CDW order and localized 4f-electron magnetism.These findings establish nanoscale strain as a powerful tuning knob for manipulating intertwined electronic and magnetic excitations in correlated magnetic systems.展开更多
EuB_(6),a magnetic topological semimetal,has attracted considerable attention in recent years due to its rich intriguing physical properties,including a colossal negative magnetoresistance(CNMR)ratio exceeding-80%,a t...EuB_(6),a magnetic topological semimetal,has attracted considerable attention in recent years due to its rich intriguing physical properties,including a colossal negative magnetoresistance(CNMR)ratio exceeding-80%,a topological phase transition and a predicted quantum anomalous Hall effect(QAHE)approaching the two-dimensional(2D)limit.Yet,studies of the influence of the dimensionality approaching 2D on the electronic transport properties of EuB_(6) are still scarce.In this work,EuB_(6) thin sheets with thicknesses ranging from 35μm to 180μm were successfully fabricated through careful mechanical polishing of high-quality EuB_(6) single crystals.The reduced thickness,temperature and magnetic field have a strong influence on the electronic transport properties,including the CNMR and carrier concentration of EuB_(6) thin sheets.As the thickness of EuB_(6) thin sheets decreases from 180μm to 35μm,the magnetization transition temperature and the corresponding suppressing temperature of the Kondo effect decrease from 15.2 K to 10.9 K,while the CNMR ratio increases from-87.2%to-90.8%.Furthermore,the weak antilocalization effect transits to a weak localization effect and the carrier concentration increases by 9.4%at 30 K in a 35μm EuB_(6) thin sheet compared to the value reported for a 180μm thin sheet.Our findings demonstrate an obvious tunable effect of the reduced dimensionality on the transport properties of EuB_(6) along with the temperature and magnetic field,which could provide a route to exploring the QAHE near the 2D limit in EuB_(6) and other topological semimetals.展开更多
Vanadium-based transition metal chalcogenides VmXn(X=S,Se,Te)with their distinctive quantum effects,tunable magnetism,spin-orbit coupling,and high carrier mobility are a valuable platform to explore the interplay betw...Vanadium-based transition metal chalcogenides VmXn(X=S,Se,Te)with their distinctive quantum effects,tunable magnetism,spin-orbit coupling,and high carrier mobility are a valuable platform to explore the interplay between magnetism and electronic correlations,especially with tunable structural phases and magnetic properties through stoichiometric variations,making them ideal candidates for advanced device applications.Here,we report the synthesis of high-quality V_(5+x)S_(8)single crystals with different concentrations of self-intercalated vanadium.V_(5+x)S_(8)crystals show an antiferromagnetic behavior and a spin-flop-like transition below TN of 30.6 K.The high-quality V_(5+x)S_(8)single crystals exhibit a large negative magnetoresistance of 12.3%at 2 K.Interestingly,V_(5+x)S_(8)crystals show an obvious low-temperature resistance upturn that gradually levels off with the increasing magnetic field,attributed to the Kondo effect arising from the interaction between conduction electrons and embedded vanadium magnetic impurities.With increasing V doping,the antiferromagnetic interactions intensify,weakening the coupling between the local moments and conduction electrons,which in turn lowers the Kondo temperature(TK).Furthermore,the anomalous Hall effect is observed in V5.73S8,with an anomalous Hall conductivity(AHC)of 50.46 W^(-1)·cm^(-1)and anomalous Hall angle of 0.73%at 2 K.Our findings offer valuable insights into the mechanisms of the Kondo effect and anomalous Hall effect in self-intercalated transition metal chalcogenides with complex magnetism and electronic correlation effects.展开更多
The alkali adatoms with controlled coverage on the surface have been demonstrated to effectively tune the surface band of quantum materials through in situ electron doping.However,the interplay of orderly arranged alk...The alkali adatoms with controlled coverage on the surface have been demonstrated to effectively tune the surface band of quantum materials through in situ electron doping.However,the interplay of orderly arranged alkali adatoms with the surface states of quantum materials remains unexplored.Here,by using low-temperature scanning tunneling microscopy/spectroscopy(STM/S),we observed the emergent 3×3 super modulation of electronic states on the√3×√3R30°(R3)Cs ordered surface of kagome superconductor CsV_(3)Sb_(5).The nondispersive 3×3 superlattice at R3 ordered surface shows contrast inversion in positive and negative differential conductance maps,indicating a charge order origin.The 3×3 charge order is suppressed with increasing temperature and undetectable at a critical temperature of~62 K.Furthermore,in the Ta substituted sample CsV_(2.6)Ta_(0.4)Sb_(5),where long-range 2×2×2 charge density wave is significantly suppressed,the 3×3 charge order on the R3 ordered surface becomes blurred and much weaker than that in the undoped sample.It indicates that the 3×3 charge order on the R3 ordered surface is directly correlated to the bulk charge density waves in CsV_(3)Sb_(5).Our work provides a new platform for understanding and manipulating the cascade of charge orders in kagome superconductors.展开更多
Ising superconductivity, induced by the strong spin–orbit coupling(SOC) and inversion symmetry breaking, can lead to the in-plane upper critical field exceeding the Pauli limit and hold significant potential for adva...Ising superconductivity, induced by the strong spin–orbit coupling(SOC) and inversion symmetry breaking, can lead to the in-plane upper critical field exceeding the Pauli limit and hold significant potential for advancing the study of topological superconductivity. However, the enhancement of Ising superconductivity is still a challenging problem, important for engineering Majorana fermions and exploring topological quantum computing. In this study, we investigated the superconducting properties of a series of van der Waals NbSe_(2-x)Te_(x) nanosheets. The Ising superconductivity in NbSe_(2-x)Te_(x) nanosheets can be significantly enhanced by the substitution of Te, an element with strong SOC. The fitted in-plane upper critical field of Nb Se_(1.5)Te_(0.5) nanosheets at absolute zero temperature reaches up to 3.2 times the Pauli limit. Angular dependence of magnetoresistance measurements reveals a distinct two-fold rotational symmetry in the superconducting transition region, highlighting the role of strong SOC. In addition, the fitting results of the Berezinskii–Kosterlitz–Thouless(BKT) transition and the two-dimensional(2D) Tinkham formula provide strong evidence for 2D superconductivity. These findings offer new perspectives for the design and modulation of the Ising superconducting state and pave the way for their potential applications in topological superconductivity and quantum technologies.展开更多
Two-dimensional van der Waals(vdW)magnetic materials,characterized by their tunable magnetism,spin transport properties,and remarkable quantum effects,provide significant promise for the development of efficient,low-p...Two-dimensional van der Waals(vdW)magnetic materials,characterized by their tunable magnetism,spin transport properties,and remarkable quantum effects,provide significant promise for the development of efficient,low-power spintronic devices.Intriguingly,the rare earth tritelluride(RTe3)materials have attracted great attention due to their unique magnetic structure,exotic electronic properties,multiple charge density wave(CDW),and superconductivity under pressure.Here,we report the successful synthesis of high-quality DyTe_(3)single crystals using a self-flux method.DyTe_(3)shows an antiferromagnetic transition at 4.5 K and demonstrates the magnetic field-induced ferromagnetism.The high-quality DyTe_(3)single crystal demonstrates outstanding transport properties,featuring a high carrier mobility of approximately1.4×10^(4)cm^(2)·V^(-1)·s^(-1)and large linear magnetoresistance of 1300%.Furthermore,distinct Shubnikov-de Haas(SdH)oscillations are observed in DyTe_(3),revealing a small Fermi pocket and an effective mass of 0.24 me.Remarkably,the unconventional in-plane negative magnetoresistances appear along the a-axis below 2 T and c-axis until 9 T from 2 K to17 K,which are attributed to the complex helimagnetic structures caused by CDW coupling and weak single-ion anisotropy.Our findings offer a significant platform for understanding the complex magnetoresistance behavior and quantum transport effects in RTe3-type materials,holding great promise for advancing applications in electronic and spintronic devices.展开更多
The interplay between 2a_(0)×2a_(0)charge density wave(CDW),nematicity and superconductivity in AV_(3)Sb_(5)(A=K,Rb,Cs)compounds gives rise to a rich landscape of intriguing physical phenomena.In addition to the ...The interplay between 2a_(0)×2a_(0)charge density wave(CDW),nematicity and superconductivity in AV_(3)Sb_(5)(A=K,Rb,Cs)compounds gives rise to a rich landscape of intriguing physical phenomena.In addition to the 2a_(0)×2a_(0)CDW,a unidirectional 4a_(0)stripe CDW is also observed on the Sb surface of RbV3Sb5and CsV3Sb5.However,reports of stripe-like CDWs in KV3Sb5have been limited.Here,we report the first observation of a long-range unidirectional stripe order with a 6a_(0)modulation period on the Sb surface of KV_(3)Sb_(5),coexisting with the 2a_(0)×2a_(0)CDW.Notably,the intensity of the6a_(0)stripes in STM topographies exhibits pronounced contrast reversal between opposite bias voltages.Additionally,the wave vector of the 6a_(0)modulation shows no energy-dependent dispersion,confirming its CDW origin.Furthermore,the6a_(0)CDW is robust under a 7 T out-of-plane magnetic field and persists over a temperature range from 215 mK to 720 mK.These results provide compelling evidence for the emergence of a long-range unidirectional CDW in KV_(3)Sb_(5).展开更多
The kagome lattice,naturally encompassing Dirac fermions,flat bands,and van Hove singularities,tends to intertwine exotic electronic states.Revealing the characteristics of its Fermi surface will help clarify the natu...The kagome lattice,naturally encompassing Dirac fermions,flat bands,and van Hove singularities,tends to intertwine exotic electronic states.Revealing the characteristics of its Fermi surface will help clarify the nature of the complex quantum phenomena in kagome material.Here we report the Fermi surface properties of the novel kagome metal CsTi_(3)Bi_(5)by the de Haas-van Alphen oscillations.The observed oscillations are clear and consist of six principal frequencies ranging from 214 T to 1013 T.The angular dependence of the frequency implies a quasi-two-dimensional electronic structure.In addition,the geometry phase corresponding to 281 T,determined by direct Lifshitz-Kosevich formula fitting,yields a value close toπ,which may indicate a band structure with nontrivial topological property.These results underscore the potential of CsTi_(3)Bi_(5)as a promising platform to explore the interplay between topological order,electronic nematicity,and superconductivity.展开更多
We report on the formation of two-dimensional monolayer AgTe crystal on Ag(111)substrates.The samples are prepared in ultrahigh vacuum by deposition of Te on Ag(111)followed by annealing.Using a scanning tunneling mic...We report on the formation of two-dimensional monolayer AgTe crystal on Ag(111)substrates.The samples are prepared in ultrahigh vacuum by deposition of Te on Ag(111)followed by annealing.Using a scanning tunneling microscope(STM)and low electron energy diffraction(LEED),we investigate the atomic structure of the samples.The STM images and the LEED pattern show that monolayer AgTe crystal is formed on Ag(111).Four kinds of atomic structures of AgTe and Ag(111)are observed:(i)flat honeycomb structure,(ii)bulked honeycomb,(iii)stripe structure,(iv)hexagonal structure.The structural analysis indicates that the formation of the different atomic structures is due to the lattice mismatch and relief of the intrinsic strain in the AgTe layer.Our results provide a simple and convenient method to produce monolayer AgTe atomic crystal on Ag(111)and a template for study of novel physical properties and for future quantum devices.展开更多
V-based kagome materials AV_(3)Sb_(5)(A=K,Rb,Cs)have attracted much attention due to their novel properties such as unconventional superconductivity,giant anomalous Hall effect,charge density wave(CDW)and pair density...V-based kagome materials AV_(3)Sb_(5)(A=K,Rb,Cs)have attracted much attention due to their novel properties such as unconventional superconductivity,giant anomalous Hall effect,charge density wave(CDW)and pair density wave.Except for the 2a_(0)×2a_(0)CDW(charge density wave with in-plane 2×2 superlattice modulation)in AV_(3)Sb_(5),an additional 1×4(4a_(0))unidirectional stripe order has been observed at the Sb surface of Rb V3 Sb5 and CsV_(3)Sb_(5).However,the stability and electronic nature of the 4a_(0) stripe order remain controversial and unclear.Here,by using low-temperature scanning tunneling microscopy/spectroscopy(STM/S),we systematically study the 4a_(0) stripe order on the Sb-terminated surface of CsV_(3)Sb_(5).We find that the 4a_(0) stripe order is visible in a large energy range.The STM images with positive and negative bias show contrast inversion,which is the hallmark for the Peierls-type CDW.In addition,below the critical temperature about 60 K,the 4a_(0)stripe order keeps unaffected against the topmost Cs atoms,point defects,step edges and magnetic field up to 8 T.Our results provide experimental evidences on the existence of unidirectional CDW in CsV_(3)Sb_(5).展开更多
Heterostructures from mechanically-assembled stacks of two-dimensional materials allow for versatile electronic device applications.Here,we demonstrate the intrinsic charge transport behaviors in graphene-black phosph...Heterostructures from mechanically-assembled stacks of two-dimensional materials allow for versatile electronic device applications.Here,we demonstrate the intrinsic charge transport behaviors in graphene-black phosphorus heterojunction devices under different charge carrier densities and temperature regimes.At high carder densities or in the ON state,tunneling through the Schottky barrier at the interface between graphene and black phosphorus dominates at low temperatures.With temperature increasing,the Schottky barrier at the interface is vanishing,and the channel current starts to decrease with increasing temperature,behaving like a metal.While at low carder densities or in the OFF state,thermal emission over the Schottky barrier at the interface dominates the carriers transport process.A barrier height of~67.3 meV can be extracted from the thermal emission-diffusion theory.展开更多
We report a large-scale, high-quality heterostructure composed of vertically-stacked graphene and two-dimensional(2D) germanium.The heterostructure is constructed by the intercalation-assisted technique.We first synth...We report a large-scale, high-quality heterostructure composed of vertically-stacked graphene and two-dimensional(2D) germanium.The heterostructure is constructed by the intercalation-assisted technique.We first synthesize large-scale,single-crystalline graphene on Ir(111) surface and then intercalate germanium at the interface of graphene and Ir(111).The intercalated germanium forms a well-defined 2D layer with a 2 × 2 superstructure with respect to Ir(111).Theoretical calculations demonstrate that the 2D germanium has a double-layer structure.Raman characterizations show that the 2D germanium effectively weakens the interaction between graphene and Ir substrate, making graphene more like the intrinsic one.Further experiments of low-energy electron diffraction, scanning tunneling microscopy, and x-ray photoelectron spectroscopy(XPS) confirm the formation of large-scale and high-quality graphene/2D-germanium vertical heterostructure.The integration of graphene with a traditional 2D semiconductor provides a platform to explore new physical phenomena in the future.展开更多
The on-surface synthesis from predesigned organic precursors can yield graphene nanoribbons(GNRs)with atomically precise widths,edge terminations and dopants,which facilitate the tunning of their electronic structures...The on-surface synthesis from predesigned organic precursors can yield graphene nanoribbons(GNRs)with atomically precise widths,edge terminations and dopants,which facilitate the tunning of their electronic structures.Here,we report the synthesis of novel sulfur-doped cove-edged GNRs(S-CGNRs)on Au(111)from a specifically designed precursor containing thiophene rings.Scanning tunneling microscopy and non-contact atomic force microscopy measurements elucidate the formation of S-CGNRs through subsequent polymerization and cyclodehydrogenation,which further result in crosslinked branched structures.Scanning tunneling spectroscopy results reveal the conduction band minimum of the S-CGNR locates at 1.2 e V.First-principles calculations show that the S-CGNR possesses an energy bandgap of 1.17 e V,which is evidently smaller than that of an undoped cove-edged GNR(1.7 e V),suggesting effective tuning of the bandgap by introducing sulfur atoms.Further increasing the coverage of precursors close to a monolayer results in the formation of linear-shaped S-CGNRs.The fabrication of S-CGNRs provides one more candidate in the GNR toolbox and promotes the future applications of heteroatom-doped graphene nanostructures.展开更多
Charge density wave(CDW)strongly affects the electronic properties of two-dimensional(2D)materials and can be tuned by phase engineering.Among 2D transitional metal dichalcogenides(TMDs),VTe_(2)was predicted to requir...Charge density wave(CDW)strongly affects the electronic properties of two-dimensional(2D)materials and can be tuned by phase engineering.Among 2D transitional metal dichalcogenides(TMDs),VTe_(2)was predicted to require small energy for its phase transition and shows unexpected CDW states in its T-phase.However,the CDW state of H-VTe_(2)has been barely reported.Here,we investigate the CDW states in monolayer(ML)H-VTe_(2),induced by phase-engineering from T-phase VTe_(2).The phase transition between T-and H-VTe_(2)is revealed with x-ray photoelectron spectroscopy(XPS)and scanning transmission electron microscopy(STEM)measurements.For H-VTe_(2),scanning tunneling microscope(STM)and low-energy electron diffraction(LEED)results show a robust 2√3×2√3CDW superlattice with a transition temperature above 450 K.Our findings provide a promising way for manipulating the CDWs in 2D materials and show great potential in its application of nanoelectronics.展开更多
We report a novel two-step ambient pressure chemical vapor deposition(CVD)pathway to grow high-quality Mo S_(2)monolayer on the Si O_(2)substrate with large crystal size up to 110μm.The large specific surface area of...We report a novel two-step ambient pressure chemical vapor deposition(CVD)pathway to grow high-quality Mo S_(2)monolayer on the Si O_(2)substrate with large crystal size up to 110μm.The large specific surface area of the pre-synthesized Mo O_(3)flakes on the mica substrate compared to Mo O_(3)powder could dramatically reduce the consumption of the Mo source.The electronic information inferred from the four-probe scanning tunneling microscope(4P-STM)image explains the threshold voltage variations and the n-type behavior observed in the two-terminal transport measurements.Furthermore,the direct van der Pauw transport also confirms its relatively high carrier mobility.Our study provides a reliable method to synthesize high-quality Mo S_(2)monolayer,which is confirmed by the direct 4P-STM measurement results.Such methodology is a key step toward the large-scale growth of transition metal dichalcogenides(TMDs)on the Si O_(2)substrate and is essential to further development of the TMDs-related integrated devices.展开更多
Majorana zero modes(MZMs) are Majorana-fermion-like quasiparticles existing in crystals or hybrid platforms with topologically non-trivial electronic structures. They obey non-Abelian braiding statistics and are consi...Majorana zero modes(MZMs) are Majorana-fermion-like quasiparticles existing in crystals or hybrid platforms with topologically non-trivial electronic structures. They obey non-Abelian braiding statistics and are considered promising to realize topological quantum computing. Discovery of MZM in the vortices of the iron-based superconductors(IBSs)has recently fueled the Majorana research in a way which not only removes the material barrier requiring construction of complicated hybrid artificial structures, but also enables observation of pure MZMs under higher temperatures. So far,MZMs have been observed in iron-based superconductors including FeTe_(0.55)Se_(0.45),(Li_(0.84)Fe_(0.16))OHFe Se, Ca KFe_(4)As_(4),and Li Fe As. In this topical review, we present an overview of the recent STM studies on the MZMs in IBSs. We start with the observation of MZMs in the vortices in FeTe_(0.55)Se_(0.45)and discuss the pros and cons of FeTe_(0.55)Se_(0.45) compared with other platforms. We then review the following up discovery of MZMs in vortices of Ca KFe_(4)As_(4), impurity-assisted vortices of Li Fe As, and quantum anomalous vortices in FeTe_(0.55)Se_(0.45), illustrating the pathway of the developments of MZM research in IBSs. Finally, we give perspective on future experimental works in this field.展开更多
Recently,the discovery of vanadium-based kagome metal AV_(3)Sb_(5)(A=K,Rb,Cs)has attracted great interest in the field of superconductivity due to the coexistence of superconductivity,non-trivial surface state and mul...Recently,the discovery of vanadium-based kagome metal AV_(3)Sb_(5)(A=K,Rb,Cs)has attracted great interest in the field of superconductivity due to the coexistence of superconductivity,non-trivial surface state and multiple density waves.In this topical review,we present recent works of superconductivity and unconventional density waves in vanadium-based kagome materials AV_(3)Sb_(5).We start with the unconventional charge density waves,which are thought to correlate to the time-reversal symmetry-breaking orders and the unconventional anomalous Hall effects in AV_(3)Sb_(5).Then we discuss the superconductivity and the topological band structure.Next,we review the competition between the superconductivity and charge density waves under different conditions of pressure,chemical doping,thickness,and strains.Finally,the experimental evidence of pseudogap pair density wave is discussed.展开更多
Epitaxial growth on transition metal surfaces is an effective way to prepare large-area and high-quality graphene.However,the strong interaction between graphene and metal substrates suppresses the intrinsic excellent...Epitaxial growth on transition metal surfaces is an effective way to prepare large-area and high-quality graphene.However,the strong interaction between graphene and metal substrates suppresses the intrinsic excellent properties of graphene and the conductive metal substrates also hinder its applications in electronics.Here we demonstrate the decoupling of graphene from metal substrates by germanium oxide intercalation.Germanium is firstly intercalated into the interface between graphene and Ir(111) substrate.Then oxygen is subsequently intercalated,leading to the formation of a GeO_(x) layer,which is confirmed by x-ray photoelectron spectroscopy.Low-energy electron diffraction and scanning tunneling microscopy studies show intact carbon lattice of graphene after the GeO_(x) intercalation.Raman characterizations reveal that the intercalated layer effectively decouples graphene from the Ir substrate.The transport measurements demonstrate that the GeO_(x) layer can act as a tunneling barrier in the fabricated large-area high-quality vertical graphene/GeO_(x)/Ir heterostructure.展开更多
Silicene is a promising 2D Dirac material as a building block for van der Waals heterostructures(vdWHs).Here we investigate the electronic properties of hexagonal boron nitride/silicene(BN/Si)vdWHs using first-princip...Silicene is a promising 2D Dirac material as a building block for van der Waals heterostructures(vdWHs).Here we investigate the electronic properties of hexagonal boron nitride/silicene(BN/Si)vdWHs using first-principles calculations.We calculate the energy band structures of BN/Si/BN heterostructures with different rotation angles and find that the electronic properties of silicene are retained and protected robustly by the BN layers.In BN/Si/BN/Si/BN heterostructure,we find that the band structure near the Fermi energy is sensitive to the stacking configurations of the silicene layers due to in-terlayer coupling.The coupling is reduced by increasing the number of BN layers between the silicene layers and becomes negligible in BN/Si/(BN)3/Si/BN.In(BN)n/Si superlattices,the band structure undergoes a conversion from Dirac lines to Dirac points by increasing the number of BN layers between the silicene layers.Calculations of silicene sandwiched by other 2D materials reveal that silicene sandwiched by low-carbon-doped boron nitride or HfO2 is semiconducting.展开更多
基金supported by the National Key Research&Development Projects of China(Grant No.2022YFA1204100)National Natural Science Foundation of China(Grant No.62488201)+1 种基金CAS Project for Young Scientists in Basic Research(YSBR-003)the Innovation Program of Quantum Science and Technology(2021ZD0302700)。
文摘As a typical in-memory computing hardware design, nonvolatile ternary content-addressable memories(TCAMs) enable the logic operation and data storage for high throughout in parallel big data processing. However,TCAM cells based on conventional silicon-based devices suffer from structural complexity and large footprintlimitations. Here, we demonstrate an ultrafast nonvolatile TCAM cell based on the MoTe2/hBN/multilayergraphene (MLG) van der Waals heterostructure using a top-gated partial floating-gate field-effect transistor(PFGFET) architecture. Based on its ambipolar transport properties, the carrier type in the source/drain andcentral channel regions of the MoTe2 channel can be efficiently tuned by the control gate and top gate, respectively,enabling the reconfigurable operation of the device in either memory or FET mode. When working inthe memory mode, it achieves an ultrafast 60 ns programming/erase speed with a current on-off ratio of ∼105,excellent retention capability, and robust endurance. When serving as a reconfigurable transistor, unipolar p-typeand n-type FETs are obtained by adopting ultrafast 60 ns control-gate voltage pulses with different polarities.The monolithic integration of memory and logic within a single device enables the content-addressable memory(CAM) functionality. Finally, by integrating two PFGFETs in parallel, a TCAM cell with a high current ratioof ∼10^(5) between the match and mismatch states is achieved without requiring additional peripheral circuitry.These results provide a promising route for the design of high-performance TCAM devices for future in-memorycomputing applications.
基金supported by the National Natural Science Foundation of China(Grant No.62488201)the National Key Research and Development Project of China(Grant No.2022YFA1204100)+1 种基金the Chinese Academy of Sciences Project for Young Scientists in Basic Research(Grant No.YSBR-003)the Innovation Program of Quantum Science and Technology(Grant No.2021ZD0302700).
文摘Recent advances in strain engineering have enabled unprecedented control over quantum states in strongly correlated magnetic systems.However,nanoscale strain modulation of charge density waves(CDWs)and magnetically excited states,which is crucial for atomically precise strain engineering and practical spintronic applications,remains unexplored.Here,we report the nanoscale strain effects on CDWs and low-energy electronic states in the van der Waals antiferromagnetic metal GdTe_(3),utilizing scanning tunneling microscopy/spectroscopy.Lowtemperature cleavage introduces local strains,resulting in the formation of nanoscale wrinkles on the GdTe_(3)surface.Atomic displacement analysis reveals two distinct types of wrinkles:Wrinkle-I,originating from unidirectional strain,and Wrinkle-II,dominated by shear strain.In Wrinkle-I,the tensile strain enhances the CDW gap,while the compressive strain induces a single low-energy magnetic state.Wrinkle-II switches the orientation of CDW,leading to the formation of an associated CDW domain wall.In addition,three low-energy magnetic states that exhibit magnetic field-dependent shifts and intensity variations emerge within the CDW gap around Wrinkle-II,indicative of a strain-tuned coupling between CDW order and localized 4f-electron magnetism.These findings establish nanoscale strain as a powerful tuning knob for manipulating intertwined electronic and magnetic excitations in correlated magnetic systems.
基金Project supported by the National Key R&D Program of China(Grant No.2022YFA1204100)the National Natural Science Foundation of China(Grant No.62488201)+1 种基金the Chinese Academy of Sciences(Grant Nos.XDB33030000 and YSBR-053)Innovation Program of Quantum Science and Technology(Grant No.2021ZD0302700)。
文摘EuB_(6),a magnetic topological semimetal,has attracted considerable attention in recent years due to its rich intriguing physical properties,including a colossal negative magnetoresistance(CNMR)ratio exceeding-80%,a topological phase transition and a predicted quantum anomalous Hall effect(QAHE)approaching the two-dimensional(2D)limit.Yet,studies of the influence of the dimensionality approaching 2D on the electronic transport properties of EuB_(6) are still scarce.In this work,EuB_(6) thin sheets with thicknesses ranging from 35μm to 180μm were successfully fabricated through careful mechanical polishing of high-quality EuB_(6) single crystals.The reduced thickness,temperature and magnetic field have a strong influence on the electronic transport properties,including the CNMR and carrier concentration of EuB_(6) thin sheets.As the thickness of EuB_(6) thin sheets decreases from 180μm to 35μm,the magnetization transition temperature and the corresponding suppressing temperature of the Kondo effect decrease from 15.2 K to 10.9 K,while the CNMR ratio increases from-87.2%to-90.8%.Furthermore,the weak antilocalization effect transits to a weak localization effect and the carrier concentration increases by 9.4%at 30 K in a 35μm EuB_(6) thin sheet compared to the value reported for a 180μm thin sheet.Our findings demonstrate an obvious tunable effect of the reduced dimensionality on the transport properties of EuB_(6) along with the temperature and magnetic field,which could provide a route to exploring the QAHE near the 2D limit in EuB_(6) and other topological semimetals.
基金supported by the National Key R&D Program of China(Grant No.2022YFA1204100)the National Natural Science Foundation of China(Grant Nos.62488201 and 1240041502)+2 种基金the CAS Project for Young Scientists in Basic Research(Grant No.YSBR-003)the Chinese Academy of Sciences(Grant No.XDB33030100)the Innovation Program of Quantum Science and Technology(Grant No.2021ZD0302700).
文摘Vanadium-based transition metal chalcogenides VmXn(X=S,Se,Te)with their distinctive quantum effects,tunable magnetism,spin-orbit coupling,and high carrier mobility are a valuable platform to explore the interplay between magnetism and electronic correlations,especially with tunable structural phases and magnetic properties through stoichiometric variations,making them ideal candidates for advanced device applications.Here,we report the synthesis of high-quality V_(5+x)S_(8)single crystals with different concentrations of self-intercalated vanadium.V_(5+x)S_(8)crystals show an antiferromagnetic behavior and a spin-flop-like transition below TN of 30.6 K.The high-quality V_(5+x)S_(8)single crystals exhibit a large negative magnetoresistance of 12.3%at 2 K.Interestingly,V_(5+x)S_(8)crystals show an obvious low-temperature resistance upturn that gradually levels off with the increasing magnetic field,attributed to the Kondo effect arising from the interaction between conduction electrons and embedded vanadium magnetic impurities.With increasing V doping,the antiferromagnetic interactions intensify,weakening the coupling between the local moments and conduction electrons,which in turn lowers the Kondo temperature(TK).Furthermore,the anomalous Hall effect is observed in V5.73S8,with an anomalous Hall conductivity(AHC)of 50.46 W^(-1)·cm^(-1)and anomalous Hall angle of 0.73%at 2 K.Our findings offer valuable insights into the mechanisms of the Kondo effect and anomalous Hall effect in self-intercalated transition metal chalcogenides with complex magnetism and electronic correlation effects.
基金Project supported by the National Key Research and Development Project of China(Grant Nos.2022YFA1204100 and 2019YFA0308500)the National Natural Science Foundation of China(Grant No.62488201)+1 种基金the CAS Project for Young Scientists in Basic Research(Grant No.YSBR-003)the Innovation Program of Quantum Science and Technology(Grant No.2021ZD0302700)。
文摘The alkali adatoms with controlled coverage on the surface have been demonstrated to effectively tune the surface band of quantum materials through in situ electron doping.However,the interplay of orderly arranged alkali adatoms with the surface states of quantum materials remains unexplored.Here,by using low-temperature scanning tunneling microscopy/spectroscopy(STM/S),we observed the emergent 3×3 super modulation of electronic states on the√3×√3R30°(R3)Cs ordered surface of kagome superconductor CsV_(3)Sb_(5).The nondispersive 3×3 superlattice at R3 ordered surface shows contrast inversion in positive and negative differential conductance maps,indicating a charge order origin.The 3×3 charge order is suppressed with increasing temperature and undetectable at a critical temperature of~62 K.Furthermore,in the Ta substituted sample CsV_(2.6)Ta_(0.4)Sb_(5),where long-range 2×2×2 charge density wave is significantly suppressed,the 3×3 charge order on the R3 ordered surface becomes blurred and much weaker than that in the undoped sample.It indicates that the 3×3 charge order on the R3 ordered surface is directly correlated to the bulk charge density waves in CsV_(3)Sb_(5).Our work provides a new platform for understanding and manipulating the cascade of charge orders in kagome superconductors.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 62488201 and 1240041502)the China Postdoctoral Science Foundation (Grant No. 2024T170990)+2 种基金the National Key R&D Program of China (Grant No. 2022YFA1204100)the Chinese Academy of Sciences (Grant No. XDB33030100)the Innovation Program of Quantum Science and Technology (Grant No. 2021ZD0302700)。
文摘Ising superconductivity, induced by the strong spin–orbit coupling(SOC) and inversion symmetry breaking, can lead to the in-plane upper critical field exceeding the Pauli limit and hold significant potential for advancing the study of topological superconductivity. However, the enhancement of Ising superconductivity is still a challenging problem, important for engineering Majorana fermions and exploring topological quantum computing. In this study, we investigated the superconducting properties of a series of van der Waals NbSe_(2-x)Te_(x) nanosheets. The Ising superconductivity in NbSe_(2-x)Te_(x) nanosheets can be significantly enhanced by the substitution of Te, an element with strong SOC. The fitted in-plane upper critical field of Nb Se_(1.5)Te_(0.5) nanosheets at absolute zero temperature reaches up to 3.2 times the Pauli limit. Angular dependence of magnetoresistance measurements reveals a distinct two-fold rotational symmetry in the superconducting transition region, highlighting the role of strong SOC. In addition, the fitting results of the Berezinskii–Kosterlitz–Thouless(BKT) transition and the two-dimensional(2D) Tinkham formula provide strong evidence for 2D superconductivity. These findings offer new perspectives for the design and modulation of the Ising superconducting state and pave the way for their potential applications in topological superconductivity and quantum technologies.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62488201 and 1240041502)the Ministry of Science and Technology of China(Grant No.2022YFA1204100)+1 种基金the Chinese Academy of Sciences(Grant No.XDB33030100)the Innovation Program of Quantum Science and Technology(Grant No.2021ZD0302700)。
文摘Two-dimensional van der Waals(vdW)magnetic materials,characterized by their tunable magnetism,spin transport properties,and remarkable quantum effects,provide significant promise for the development of efficient,low-power spintronic devices.Intriguingly,the rare earth tritelluride(RTe3)materials have attracted great attention due to their unique magnetic structure,exotic electronic properties,multiple charge density wave(CDW),and superconductivity under pressure.Here,we report the successful synthesis of high-quality DyTe_(3)single crystals using a self-flux method.DyTe_(3)shows an antiferromagnetic transition at 4.5 K and demonstrates the magnetic field-induced ferromagnetism.The high-quality DyTe_(3)single crystal demonstrates outstanding transport properties,featuring a high carrier mobility of approximately1.4×10^(4)cm^(2)·V^(-1)·s^(-1)and large linear magnetoresistance of 1300%.Furthermore,distinct Shubnikov-de Haas(SdH)oscillations are observed in DyTe_(3),revealing a small Fermi pocket and an effective mass of 0.24 me.Remarkably,the unconventional in-plane negative magnetoresistances appear along the a-axis below 2 T and c-axis until 9 T from 2 K to17 K,which are attributed to the complex helimagnetic structures caused by CDW coupling and weak single-ion anisotropy.Our findings offer a significant platform for understanding the complex magnetoresistance behavior and quantum transport effects in RTe3-type materials,holding great promise for advancing applications in electronic and spintronic devices.
基金Project supported by the National Key Research and Development Project of China(Grant Nos.2024YFA1207700 and 2022YFA1204100)the National Natural Science Foundation of China(Grant No.62488201)+2 种基金the CAS Project for Young Scientists in Basic Research(Grant No.YSBR-003)the Youth Innovation Promotion Association(Grant No.2023005)the Innovation Program of Quantum Science and Technology(Grant No.2021ZD0302700)。
文摘The interplay between 2a_(0)×2a_(0)charge density wave(CDW),nematicity and superconductivity in AV_(3)Sb_(5)(A=K,Rb,Cs)compounds gives rise to a rich landscape of intriguing physical phenomena.In addition to the 2a_(0)×2a_(0)CDW,a unidirectional 4a_(0)stripe CDW is also observed on the Sb surface of RbV3Sb5and CsV3Sb5.However,reports of stripe-like CDWs in KV3Sb5have been limited.Here,we report the first observation of a long-range unidirectional stripe order with a 6a_(0)modulation period on the Sb surface of KV_(3)Sb_(5),coexisting with the 2a_(0)×2a_(0)CDW.Notably,the intensity of the6a_(0)stripes in STM topographies exhibits pronounced contrast reversal between opposite bias voltages.Additionally,the wave vector of the 6a_(0)modulation shows no energy-dependent dispersion,confirming its CDW origin.Furthermore,the6a_(0)CDW is robust under a 7 T out-of-plane magnetic field and persists over a temperature range from 215 mK to 720 mK.These results provide compelling evidence for the emergence of a long-range unidirectional CDW in KV_(3)Sb_(5).
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2022YFA1403903,2023YFA1406100,2018YFA0305800,and 2022YFA1204100)the National Natural Science Foundation of China(Grant Nos.12304075,11834014,61888102,and 12447101)+2 种基金Chinese Academy of Sciences(Grant Nos.XDB33010200 and 2022YSBR-048)the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB28000000)the National Science and Technology Major Project(Grant No.2024ZD0300500)。
文摘The kagome lattice,naturally encompassing Dirac fermions,flat bands,and van Hove singularities,tends to intertwine exotic electronic states.Revealing the characteristics of its Fermi surface will help clarify the nature of the complex quantum phenomena in kagome material.Here we report the Fermi surface properties of the novel kagome metal CsTi_(3)Bi_(5)by the de Haas-van Alphen oscillations.The observed oscillations are clear and consist of six principal frequencies ranging from 214 T to 1013 T.The angular dependence of the frequency implies a quasi-two-dimensional electronic structure.In addition,the geometry phase corresponding to 281 T,determined by direct Lifshitz-Kosevich formula fitting,yields a value close toπ,which may indicate a band structure with nontrivial topological property.These results underscore the potential of CsTi_(3)Bi_(5)as a promising platform to explore the interplay between topological order,electronic nematicity,and superconductivity.
基金Supported by the National Key Research&Development Projects of China under Grant Nos 2016YFA0202300 and 2018FYA0305800the National Natural Science Foundation of China under Grant Nos 61390501,61474141 and 11604373+1 种基金the CAS Pioneer Hundred Talents Programthe Strategic Priority Research Program of Chinese Academy of Sciences under Grant No XDB28000000
文摘We report on the formation of two-dimensional monolayer AgTe crystal on Ag(111)substrates.The samples are prepared in ultrahigh vacuum by deposition of Te on Ag(111)followed by annealing.Using a scanning tunneling microscope(STM)and low electron energy diffraction(LEED),we investigate the atomic structure of the samples.The STM images and the LEED pattern show that monolayer AgTe crystal is formed on Ag(111).Four kinds of atomic structures of AgTe and Ag(111)are observed:(i)flat honeycomb structure,(ii)bulked honeycomb,(iii)stripe structure,(iv)hexagonal structure.The structural analysis indicates that the formation of the different atomic structures is due to the lattice mismatch and relief of the intrinsic strain in the AgTe layer.Our results provide a simple and convenient method to produce monolayer AgTe atomic crystal on Ag(111)and a template for study of novel physical properties and for future quantum devices.
基金financially supported by the National Key Research and Development Project of China(Grant Nos.2018YFA0305800 and 2019YFA0308500)the National Natural Science Foundation of China(Grant Nos.61888102and 52022105)+2 种基金the Strategic Priority Research Program of Chinese Academy of Sciences(Grant Nos.XDB30000000 and XDB28000000)CAS Project for Young Scientists in Basic Research(Grant No.YSBR-003)the University of Chinese Academy of Sciences。
文摘V-based kagome materials AV_(3)Sb_(5)(A=K,Rb,Cs)have attracted much attention due to their novel properties such as unconventional superconductivity,giant anomalous Hall effect,charge density wave(CDW)and pair density wave.Except for the 2a_(0)×2a_(0)CDW(charge density wave with in-plane 2×2 superlattice modulation)in AV_(3)Sb_(5),an additional 1×4(4a_(0))unidirectional stripe order has been observed at the Sb surface of Rb V3 Sb5 and CsV_(3)Sb_(5).However,the stability and electronic nature of the 4a_(0) stripe order remain controversial and unclear.Here,by using low-temperature scanning tunneling microscopy/spectroscopy(STM/S),we systematically study the 4a_(0) stripe order on the Sb-terminated surface of CsV_(3)Sb_(5).We find that the 4a_(0) stripe order is visible in a large energy range.The STM images with positive and negative bias show contrast inversion,which is the hallmark for the Peierls-type CDW.In addition,below the critical temperature about 60 K,the 4a_(0)stripe order keeps unaffected against the topmost Cs atoms,point defects,step edges and magnetic field up to 8 T.Our results provide experimental evidences on the existence of unidirectional CDW in CsV_(3)Sb_(5).
基金Project supported by the National Basic Research Program of China(Grant No.2013CBA01600)the National Key Research&Development Project of China(Grant No.2016YFA0202300)+2 种基金the National Natural Science Foundation of China(Grant Nos.61474141,61674170,61335006,61390501,51325204,and51210003)Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.20150005)the China Postdoctoral Science Foundation(Grant No.2017M623146)
文摘Heterostructures from mechanically-assembled stacks of two-dimensional materials allow for versatile electronic device applications.Here,we demonstrate the intrinsic charge transport behaviors in graphene-black phosphorus heterojunction devices under different charge carrier densities and temperature regimes.At high carder densities or in the ON state,tunneling through the Schottky barrier at the interface between graphene and black phosphorus dominates at low temperatures.With temperature increasing,the Schottky barrier at the interface is vanishing,and the channel current starts to decrease with increasing temperature,behaving like a metal.While at low carder densities or in the OFF state,thermal emission over the Schottky barrier at the interface dominates the carriers transport process.A barrier height of~67.3 meV can be extracted from the thermal emission-diffusion theory.
基金Project supported by the National Key Research&Development Program of China(Grant Nos.2016YFA0202300 and 2018YFA0305800)the National Natural Science Foundation of China(Grant Nos.61390501,61888102,and 51872284)+2 种基金the Strategic Priority Research Program of Chinese Academy of Sciences(Grant Nos.XDB30000000 and XDB28000000)Beijing Nova Program,China(Grant No.Z181100006218023)the University of Chinese Academy of Sciences
文摘We report a large-scale, high-quality heterostructure composed of vertically-stacked graphene and two-dimensional(2D) germanium.The heterostructure is constructed by the intercalation-assisted technique.We first synthesize large-scale,single-crystalline graphene on Ir(111) surface and then intercalate germanium at the interface of graphene and Ir(111).The intercalated germanium forms a well-defined 2D layer with a 2 × 2 superstructure with respect to Ir(111).Theoretical calculations demonstrate that the 2D germanium has a double-layer structure.Raman characterizations show that the 2D germanium effectively weakens the interaction between graphene and Ir substrate, making graphene more like the intrinsic one.Further experiments of low-energy electron diffraction, scanning tunneling microscopy, and x-ray photoelectron spectroscopy(XPS) confirm the formation of large-scale and high-quality graphene/2D-germanium vertical heterostructure.The integration of graphene with a traditional 2D semiconductor provides a platform to explore new physical phenomena in the future.
基金the National Natural Science Foundation of China(Grant Nos.51761135130,61888102,and 21774076)the National Key Research and Development Program of China(Grant Nos.2018YFA0305800 and 2019YFA0308500)+3 种基金the DFG Enhance Nano(Grant No.391979941)the Strategic Priority Research Program of Chinese Academy of Sciences(Grant Nos.XDB30000000)the International Partnership Program of Chinese Academy of Sciences(Grant No.112111KYSB20160061)the K C Wong Education Foundation and the Program of Shanghai Academic Research Leader(Grant No.19XD1421700)。
文摘The on-surface synthesis from predesigned organic precursors can yield graphene nanoribbons(GNRs)with atomically precise widths,edge terminations and dopants,which facilitate the tunning of their electronic structures.Here,we report the synthesis of novel sulfur-doped cove-edged GNRs(S-CGNRs)on Au(111)from a specifically designed precursor containing thiophene rings.Scanning tunneling microscopy and non-contact atomic force microscopy measurements elucidate the formation of S-CGNRs through subsequent polymerization and cyclodehydrogenation,which further result in crosslinked branched structures.Scanning tunneling spectroscopy results reveal the conduction band minimum of the S-CGNR locates at 1.2 e V.First-principles calculations show that the S-CGNR possesses an energy bandgap of 1.17 e V,which is evidently smaller than that of an undoped cove-edged GNR(1.7 e V),suggesting effective tuning of the bandgap by introducing sulfur atoms.Further increasing the coverage of precursors close to a monolayer results in the formation of linear-shaped S-CGNRs.The fabrication of S-CGNRs provides one more candidate in the GNR toolbox and promotes the future applications of heteroatom-doped graphene nanostructures.
基金the National Key Research and Development Program of China(Grant Nos.2021YFA1400100,2020YFA0308800,and 2019YFA0308000)the National Natural Science Foundation of China(Grant Nos.92163206,62171035,62171035,61901038,61971035,61725107,and 61674171)+1 种基金the Beijing Nova Program from Beijing Municipal Science&Technology Commission(Grant No.Z211100002121072)the Beijing Natural Science Foundation(Grant Nos.Z190006 and 4192054)。
文摘Charge density wave(CDW)strongly affects the electronic properties of two-dimensional(2D)materials and can be tuned by phase engineering.Among 2D transitional metal dichalcogenides(TMDs),VTe_(2)was predicted to require small energy for its phase transition and shows unexpected CDW states in its T-phase.However,the CDW state of H-VTe_(2)has been barely reported.Here,we investigate the CDW states in monolayer(ML)H-VTe_(2),induced by phase-engineering from T-phase VTe_(2).The phase transition between T-and H-VTe_(2)is revealed with x-ray photoelectron spectroscopy(XPS)and scanning transmission electron microscopy(STEM)measurements.For H-VTe_(2),scanning tunneling microscope(STM)and low-energy electron diffraction(LEED)results show a robust 2√3×2√3CDW superlattice with a transition temperature above 450 K.Our findings provide a promising way for manipulating the CDWs in 2D materials and show great potential in its application of nanoelectronics.
基金Project supported by the National Natural Science Foundation of China(Grant No.61888102)the National Natural Science Foundation of China(Grant No.12004417)+5 种基金the National Key Research and Development Program of China(Grant Nos.2018YFA0305800 and 2019YFA0308500)the National Natural Science Foundation of China(Grant No.U2032206)Chinese Academy of Sciences(Grant Nos.XDB36000000,YSBR-003,and 112111KYSB20160061)Strategic Priority Research Program of Chinese Academy of Sciences(CAS)(Grant Nos.XDB30000000 and XDB28000000)Youth Innovation Promotion Association of CAS(Grant No.Y201902)CAS Project for Young Scientists in Basic Research(Grant No.YSBR-003)。
文摘We report a novel two-step ambient pressure chemical vapor deposition(CVD)pathway to grow high-quality Mo S_(2)monolayer on the Si O_(2)substrate with large crystal size up to 110μm.The large specific surface area of the pre-synthesized Mo O_(3)flakes on the mica substrate compared to Mo O_(3)powder could dramatically reduce the consumption of the Mo source.The electronic information inferred from the four-probe scanning tunneling microscope(4P-STM)image explains the threshold voltage variations and the n-type behavior observed in the two-terminal transport measurements.Furthermore,the direct van der Pauw transport also confirms its relatively high carrier mobility.Our study provides a reliable method to synthesize high-quality Mo S_(2)monolayer,which is confirmed by the direct 4P-STM measurement results.Such methodology is a key step toward the large-scale growth of transition metal dichalcogenides(TMDs)on the Si O_(2)substrate and is essential to further development of the TMDs-related integrated devices.
基金supported by the Ministry of Science and Technology of China (Grant No. 2019YFA0308500)the Chinese Academy of Sciences (Grant Nos. XDB28000000 and YSBR-003)。
文摘Majorana zero modes(MZMs) are Majorana-fermion-like quasiparticles existing in crystals or hybrid platforms with topologically non-trivial electronic structures. They obey non-Abelian braiding statistics and are considered promising to realize topological quantum computing. Discovery of MZM in the vortices of the iron-based superconductors(IBSs)has recently fueled the Majorana research in a way which not only removes the material barrier requiring construction of complicated hybrid artificial structures, but also enables observation of pure MZMs under higher temperatures. So far,MZMs have been observed in iron-based superconductors including FeTe_(0.55)Se_(0.45),(Li_(0.84)Fe_(0.16))OHFe Se, Ca KFe_(4)As_(4),and Li Fe As. In this topical review, we present an overview of the recent STM studies on the MZMs in IBSs. We start with the observation of MZMs in the vortices in FeTe_(0.55)Se_(0.45)and discuss the pros and cons of FeTe_(0.55)Se_(0.45) compared with other platforms. We then review the following up discovery of MZMs in vortices of Ca KFe_(4)As_(4), impurity-assisted vortices of Li Fe As, and quantum anomalous vortices in FeTe_(0.55)Se_(0.45), illustrating the pathway of the developments of MZM research in IBSs. Finally, we give perspective on future experimental works in this field.
基金support from the Ministry of Science and Technology of Chinathe National Natural Science Foundation of China and Chinese Academy of Sciences
文摘Recently,the discovery of vanadium-based kagome metal AV_(3)Sb_(5)(A=K,Rb,Cs)has attracted great interest in the field of superconductivity due to the coexistence of superconductivity,non-trivial surface state and multiple density waves.In this topical review,we present recent works of superconductivity and unconventional density waves in vanadium-based kagome materials AV_(3)Sb_(5).We start with the unconventional charge density waves,which are thought to correlate to the time-reversal symmetry-breaking orders and the unconventional anomalous Hall effects in AV_(3)Sb_(5).Then we discuss the superconductivity and the topological band structure.Next,we review the competition between the superconductivity and charge density waves under different conditions of pressure,chemical doping,thickness,and strains.Finally,the experimental evidence of pseudogap pair density wave is discussed.
基金Project supported by the National Key Research&Development Program of China(Grant Nos.2019YFA0308500,2016YFA0202300,and 2018YFA0305800)the National Natural Science Foundation of China(Grant Nos.61888102,61925111,and 21661132006)+1 种基金the Strategic Priority Research Program of Chinese Academy of Sciences(Grant Nos.XDB30000000 and XDB28000000)the CAS Key Laboratory of Vacuum Physics。
文摘Epitaxial growth on transition metal surfaces is an effective way to prepare large-area and high-quality graphene.However,the strong interaction between graphene and metal substrates suppresses the intrinsic excellent properties of graphene and the conductive metal substrates also hinder its applications in electronics.Here we demonstrate the decoupling of graphene from metal substrates by germanium oxide intercalation.Germanium is firstly intercalated into the interface between graphene and Ir(111) substrate.Then oxygen is subsequently intercalated,leading to the formation of a GeO_(x) layer,which is confirmed by x-ray photoelectron spectroscopy.Low-energy electron diffraction and scanning tunneling microscopy studies show intact carbon lattice of graphene after the GeO_(x) intercalation.Raman characterizations reveal that the intercalated layer effectively decouples graphene from the Ir substrate.The transport measurements demonstrate that the GeO_(x) layer can act as a tunneling barrier in the fabricated large-area high-quality vertical graphene/GeO_(x)/Ir heterostructure.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFA0202300)the National Natural Science Foundation of China(Grant Nos.61390501 and 61471337)+2 种基金the National Basic Research Program of China(Grant No.2013CBA01600)the CAS Pioneer Hundred Talents Programthe Beijing Nova Program,China(Grant No.Z181100006218023)
文摘Silicene is a promising 2D Dirac material as a building block for van der Waals heterostructures(vdWHs).Here we investigate the electronic properties of hexagonal boron nitride/silicene(BN/Si)vdWHs using first-principles calculations.We calculate the energy band structures of BN/Si/BN heterostructures with different rotation angles and find that the electronic properties of silicene are retained and protected robustly by the BN layers.In BN/Si/BN/Si/BN heterostructure,we find that the band structure near the Fermi energy is sensitive to the stacking configurations of the silicene layers due to in-terlayer coupling.The coupling is reduced by increasing the number of BN layers between the silicene layers and becomes negligible in BN/Si/(BN)3/Si/BN.In(BN)n/Si superlattices,the band structure undergoes a conversion from Dirac lines to Dirac points by increasing the number of BN layers between the silicene layers.Calculations of silicene sandwiched by other 2D materials reveal that silicene sandwiched by low-carbon-doped boron nitride or HfO2 is semiconducting.
