由于变桨轴承不完全转动的工作特殊性,基于振动或应变等常规监测手段难以奏效,为此提出一种基于声发射(acoustic emission,简称AE)技术监测方法获取信号,并采用短时傅里叶方法(short time Fourier transform,简称STFT)进行分析诊断的方...由于变桨轴承不完全转动的工作特殊性,基于振动或应变等常规监测手段难以奏效,为此提出一种基于声发射(acoustic emission,简称AE)技术监测方法获取信号,并采用短时傅里叶方法(short time Fourier transform,简称STFT)进行分析诊断的方法。首先,研究了AE技术的信号采集方法,推导了STFT的原理及过程,并在某风电机组变桨轴承上进行实验验证;其次,先后在时域、频域及时频域对有裂纹数据和无裂纹数据进行对比,发现时频域基于STFT分析方法可以有效发现裂纹;最后,通过新的裂纹数据进行验证,可以确认裂纹特征。结果表明:AE信号能较好地获取变桨轴承的状态信息,STFT分析方法可以较好地识别裂纹故障,较少受工况或其他因素的影响,有较高的实用价值。展开更多
The dielectric functions of GaN for the temperature and frequency ranges of 10–300 K and 0.3–1 THz are obtained using terahertz time-domain spectroscopy.It is found that there are oscillations of the dielectric func...The dielectric functions of GaN for the temperature and frequency ranges of 10–300 K and 0.3–1 THz are obtained using terahertz time-domain spectroscopy.It is found that there are oscillations of the dielectric functions at various temperatures.Physically,the oscillation behavior is attributed to the resonance states of the point defects in the material.Furthermore,the dielectric functions are well fitted by the combination of the simple Drude model together with the classical damped oscillator model.According to the values of the fitting parameters,the concentration and electron lifetime of the point defects for various temperatures are determined,and the temperature dependences of them are in accordance with the previously reported result.Therefore,terahertz time-domain spectroscopy can be considered as a promising technique for investigating the relevant characteristics of the point defects in semiconductor materials.展开更多
In our experiments,the PL spectra of several In x Ga 1 x N alloy samples with In contents x=0.1,0.15 and 0.25 were measured as a function of temperature ranging from 10 K to 300 K.S-shaped temperature dependencies wer...In our experiments,the PL spectra of several In x Ga 1 x N alloy samples with In contents x=0.1,0.15 and 0.25 were measured as a function of temperature ranging from 10 K to 300 K.S-shaped temperature dependencies were observed in all InGaN samples and a sharp decrease in the full width at half maximum occurred with decreasing temperature in the moderate temperature region.It was found that both phenomena are relative to localization effects.In addition,the degree of localization effects in three samples was investigated using the band-tail model.Our findings are presented in this paper.展开更多
Based on the modification of the simplified coherent potential approximation （SCPA）, a model is developed to calculate the composition dependence of the band gap energy of Ⅲ-V ternary alloys with the same anion. Th...Based on the modification of the simplified coherent potential approximation （SCPA）, a model is developed to calculate the composition dependence of the band gap energy of Ⅲ-V ternary alloys with the same anion. The derived equation is used to fit the experimental band gap energy of InxAl1-xN, InxGa1-xN and A1xGal xN with x from 0 to 1. It is found that the fitting results are better than those done by using SCPA. The fitting results are also better than those obtained by using the formula with a small bowing coefficient, especially for InxAl1-xN. In addition, our model can also be used to describe the composition de- pendence of band gap energy of other Ⅲ-V ternary alloys.展开更多
The m-plane InN （1 100） epilayers have been grown on a LiAlO2 （1 0 0） substrate by a two-step growth method using a met- al-organic chemical vapor deposition （MOCVD） system. The low temperature InN buffer layer ...The m-plane InN （1 100） epilayers have been grown on a LiAlO2 （1 0 0） substrate by a two-step growth method using a met- al-organic chemical vapor deposition （MOCVD） system. The low temperature InN buffer layer （LT-InN） is introduced to overcome the drawbacks of thermal instability of LiAlO2 （LAO） and to relieve the strains due to a large thermal mismatch be- tween LAO and InN. Then the high temperature m-plane InN （1 1 00） epilayers （HT-InN） were grown. The results of X-ray diffraction （XRD） suggest that the m-plane InN （1 1 00） epilayer is a single crystal. The X-ray rocking curves （co scans） （XRC） and atomic force microscopy （AFM） indicate that the m-plane InN （1 1 00） epilayer has anisotropic crystallographic properties. The PL studies of the materials reveal a remarkable energy band gap structure around 0.70 eV at 15 K.展开更多
文摘由于变桨轴承不完全转动的工作特殊性,基于振动或应变等常规监测手段难以奏效,为此提出一种基于声发射(acoustic emission,简称AE)技术监测方法获取信号,并采用短时傅里叶方法(short time Fourier transform,简称STFT)进行分析诊断的方法。首先,研究了AE技术的信号采集方法,推导了STFT的原理及过程,并在某风电机组变桨轴承上进行实验验证;其次,先后在时域、频域及时频域对有裂纹数据和无裂纹数据进行对比,发现时频域基于STFT分析方法可以有效发现裂纹;最后,通过新的裂纹数据进行验证,可以确认裂纹特征。结果表明:AE信号能较好地获取变桨轴承的状态信息,STFT分析方法可以较好地识别裂纹故障,较少受工况或其他因素的影响,有较高的实用价值。
基金supported by the Special Funds for Major State Basic Research Project (Grant No. 2011CB301900)the 973 project of the Ministry of Science and Technology of China (Grant No. 2011CBA00107)+4 种基金the Hi-tech Research Project (Grant No. 2011AA03A103)the National Natural Science Foundation of China (Grant Nos. 60990311, 60820106003, 60906025, 60936004, 61176063, 61071009, and 61027008)the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 20090091110040)the Natural Science of Foundation of Jiangsu province (Grant Nos. BK2011010, BK2010385, and BK2010178)the Fok Ying-Tong Education Foundation (Grant No. 122028)
文摘The dielectric functions of GaN for the temperature and frequency ranges of 10–300 K and 0.3–1 THz are obtained using terahertz time-domain spectroscopy.It is found that there are oscillations of the dielectric functions at various temperatures.Physically,the oscillation behavior is attributed to the resonance states of the point defects in the material.Furthermore,the dielectric functions are well fitted by the combination of the simple Drude model together with the classical damped oscillator model.According to the values of the fitting parameters,the concentration and electron lifetime of the point defects for various temperatures are determined,and the temperature dependences of them are in accordance with the previously reported result.Therefore,terahertz time-domain spectroscopy can be considered as a promising technique for investigating the relevant characteristics of the point defects in semiconductor materials.
基金supported by the Special Funds for Major State Basic Research Project (Grant No. 2011CB301901)the National Natural Science Foundation of China (Grant Nos. 60820106003,60990311 and 60906025)+1 种基金the Natural Science Foundation of Jiangsu Province (Grant Nos.BK2008019 and BK2009255)the Research Funds from NJU-Yangzhou Institute of Opto-electronics
文摘In our experiments,the PL spectra of several In x Ga 1 x N alloy samples with In contents x=0.1,0.15 and 0.25 were measured as a function of temperature ranging from 10 K to 300 K.S-shaped temperature dependencies were observed in all InGaN samples and a sharp decrease in the full width at half maximum occurred with decreasing temperature in the moderate temperature region.It was found that both phenomena are relative to localization effects.In addition,the degree of localization effects in three samples was investigated using the band-tail model.Our findings are presented in this paper.
基金supported by the Special Funds for Major State Basic Research Project (Grant No. 2011CB301900)the National Natural Science Foundation of China (Grant No. 60990311)
文摘Based on the modification of the simplified coherent potential approximation （SCPA）, a model is developed to calculate the composition dependence of the band gap energy of Ⅲ-V ternary alloys with the same anion. The derived equation is used to fit the experimental band gap energy of InxAl1-xN, InxGa1-xN and A1xGal xN with x from 0 to 1. It is found that the fitting results are better than those done by using SCPA. The fitting results are also better than those obtained by using the formula with a small bowing coefficient, especially for InxAl1-xN. In addition, our model can also be used to describe the composition de- pendence of band gap energy of other Ⅲ-V ternary alloys.
基金supported by the Special Funds for the Major State Basic Research Project (Grant No. 2011CB301900)the High-Tech Research Project (Grant No. 2011AA03A103)+2 种基金the National Natural Science Foundation of China (Grant Nos. 60990311, 60820106003, 60721063,60906025, 60936004 and 61176063)the Natural Science Foundation of Jiangsu Province (Grant Nos. BK2011010, BK2009255, BK2010178 andBK2010385)the Research Funds from NJU-Yangzhou Institute of Opto-electronics
文摘The m-plane InN （1 100） epilayers have been grown on a LiAlO2 （1 0 0） substrate by a two-step growth method using a met- al-organic chemical vapor deposition （MOCVD） system. The low temperature InN buffer layer （LT-InN） is introduced to overcome the drawbacks of thermal instability of LiAlO2 （LAO） and to relieve the strains due to a large thermal mismatch be- tween LAO and InN. Then the high temperature m-plane InN （1 1 00） epilayers （HT-InN） were grown. The results of X-ray diffraction （XRD） suggest that the m-plane InN （1 1 00） epilayer is a single crystal. The X-ray rocking curves （co scans） （XRC） and atomic force microscopy （AFM） indicate that the m-plane InN （1 1 00） epilayer has anisotropic crystallographic properties. The PL studies of the materials reveal a remarkable energy band gap structure around 0.70 eV at 15 K.
