We have realized efficient photopatterning and high-quality ZrO_(2)films through combustion synthesis and manufactured resistive random access memory(RRAM)devices with excellent switching stability at low temperatures...We have realized efficient photopatterning and high-quality ZrO_(2)films through combustion synthesis and manufactured resistive random access memory(RRAM)devices with excellent switching stability at low temperatures(250℃)using these approaches.Combustion synthesis reduces the energy required for oxide conversion,thus accelerating the decomposition of organic ligands in the UV-exposed area,and promoting the formation of metal-oxygen networks,contributing to patterning.Thermal analysis confirmed a reduction in the conversion temperature of combustion precursors,and the prepared combustion ZrO_(2)films exhibited a high proportion of metal-oxygen bonding that constitutes the oxide lattice,along with an amorphous phase.Furthermore,the synergistic effect of combustion synthesis and UV/O_(3)-assisted photochemical activation resulted in patterned ZrO_(2)films forming even more complete metal-oxygen networks.RRAM devices fabricated with patterned ZrO_(2)films using combustion synthesis exhibited excellent switching characteristics,including a narrow resistance distribution,endurance of 103 cycles,and retention for 105 s at 85℃,despite low-temperature annealing.Combustion synthesis not only enables the formation of high-quality metal oxide films with low external energy but also facilitates improved photopatterning.展开更多
The enhanced carrier flow at the interface between Au and SnO_(2)semiconductors,which initially form Schottky contacts,is realized using chloride-based combustion synthesis.Chloride-based combustion sys-tems can achie...The enhanced carrier flow at the interface between Au and SnO_(2)semiconductors,which initially form Schottky contacts,is realized using chloride-based combustion synthesis.Chloride-based combustion sys-tems can achieve chlorine(Cl)doping effects as well as conversion to crystalline SnO_(2)films at clearly lower temperatures(∼250℃)than conventional precursors.Due to the Cl doping effect,the high carrier concentration can induce thin potential barriers at the metal/semiconductor(MS)junctions,resulting in carrier injection by tunneling.As a result,compared to conventional SnO_(2)thin-film transistors,the de-vices fabricated by combustion synthesis exhibit significantly improved electrical performance with field-effect mobility of 6.52 cm 2/Vs(∼13 times),subthreshold swing of 0.74 V/dec,and on/offratio of∼10^(7)below 300℃.Furthermore,because of the enhanced tunneling carriers induced by the narrowed barrier width,the Schottky barriers are significantly reduced from 0.83 to 0.29 eV(65%decrease)at 250℃and from 0.42 to 0.17 eV(60%decrease)at 400℃.Therefore,chloride-based combustion synthesis can con-tribute to developing SnO_(2)-based electronics and flexible devices by achieving both high-quality oxide films and improved current flow at the MS interface with low-temperature annealing.展开更多
We developed high-performance flexible oxide thin-film transistors(TFTs)using SnO_(2) semiconductor and high-k ZrO_(2) dielectric,both formed through combustion-assisted sol-gel processes.This method involves the exot...We developed high-performance flexible oxide thin-film transistors(TFTs)using SnO_(2) semiconductor and high-k ZrO_(2) dielectric,both formed through combustion-assisted sol-gel processes.This method involves the exothermic reaction of fuels and oxidizers to produce high-quality oxide films without extensive external heating.The combustion ZrO_(2) films were revealed to have an amorphous structure with a higher proportion of oxygen corresponding to the oxide network,which contributes to the low leakage current and frequency-independent dielectric properties.The ZrO_(2)/SnO_(2) TFTs fabricated on flexible substrates using combustion synthesis exhibited excellent electrical characteristics,including a field-effectmobility of 26.16 cm^(2)/Vs,a subthreshold swing of 0.125 V/dec,and an on/off current ratio of 1.13×10^(6) at a low operating voltage of 3 V.Furthermore,we demonstrated flexible ZrO_(2)/SnO_(2) TFTs with robust mechanical stability,capable of withstanding 5000 cycles of bending tests at a bending radius of 2.5 mm,achieved by scaling down the device dimensions.展开更多
基金supported by the National Research Founda-tion of Korea(NRF)grants funded by the Ministry of Science and ICT(MSIT)(Nos.RS-2023-00251283,RS-2023-00257003,and 2022M3D1A2083618)supported by the DGIST R&D Program of the MSIT(No.23-CoE-BT-03).
文摘We have realized efficient photopatterning and high-quality ZrO_(2)films through combustion synthesis and manufactured resistive random access memory(RRAM)devices with excellent switching stability at low temperatures(250℃)using these approaches.Combustion synthesis reduces the energy required for oxide conversion,thus accelerating the decomposition of organic ligands in the UV-exposed area,and promoting the formation of metal-oxygen networks,contributing to patterning.Thermal analysis confirmed a reduction in the conversion temperature of combustion precursors,and the prepared combustion ZrO_(2)films exhibited a high proportion of metal-oxygen bonding that constitutes the oxide lattice,along with an amorphous phase.Furthermore,the synergistic effect of combustion synthesis and UV/O_(3)-assisted photochemical activation resulted in patterned ZrO_(2)films forming even more complete metal-oxygen networks.RRAM devices fabricated with patterned ZrO_(2)films using combustion synthesis exhibited excellent switching characteristics,including a narrow resistance distribution,endurance of 103 cycles,and retention for 105 s at 85℃,despite low-temperature annealing.Combustion synthesis not only enables the formation of high-quality metal oxide films with low external energy but also facilitates improved photopatterning.
基金supported by the DGIST R&D Program of the Ministry of Science and ICT(Nos.23-CoE-BT-03 and 23-IJRP-01)supported by the Basic Science Research Pro-gram through the National Research Foundation of Korea(NRF)funded by the MSIT(No.2019M3C1B8090840)by the Ministry of Education(No.2020R1A6A1A03040516).
文摘The enhanced carrier flow at the interface between Au and SnO_(2)semiconductors,which initially form Schottky contacts,is realized using chloride-based combustion synthesis.Chloride-based combustion sys-tems can achieve chlorine(Cl)doping effects as well as conversion to crystalline SnO_(2)films at clearly lower temperatures(∼250℃)than conventional precursors.Due to the Cl doping effect,the high carrier concentration can induce thin potential barriers at the metal/semiconductor(MS)junctions,resulting in carrier injection by tunneling.As a result,compared to conventional SnO_(2)thin-film transistors,the de-vices fabricated by combustion synthesis exhibit significantly improved electrical performance with field-effect mobility of 6.52 cm 2/Vs(∼13 times),subthreshold swing of 0.74 V/dec,and on/offratio of∼10^(7)below 300℃.Furthermore,because of the enhanced tunneling carriers induced by the narrowed barrier width,the Schottky barriers are significantly reduced from 0.83 to 0.29 eV(65%decrease)at 250℃and from 0.42 to 0.17 eV(60%decrease)at 400℃.Therefore,chloride-based combustion synthesis can con-tribute to developing SnO_(2)-based electronics and flexible devices by achieving both high-quality oxide films and improved current flow at the MS interface with low-temperature annealing.
基金supported by the National Research Foundation of Korea(NRF)funded by the Ministry of Science and ICT(MSIT)(RS-2024-00428887 and 2022M3D1A2083618).
文摘We developed high-performance flexible oxide thin-film transistors(TFTs)using SnO_(2) semiconductor and high-k ZrO_(2) dielectric,both formed through combustion-assisted sol-gel processes.This method involves the exothermic reaction of fuels and oxidizers to produce high-quality oxide films without extensive external heating.The combustion ZrO_(2) films were revealed to have an amorphous structure with a higher proportion of oxygen corresponding to the oxide network,which contributes to the low leakage current and frequency-independent dielectric properties.The ZrO_(2)/SnO_(2) TFTs fabricated on flexible substrates using combustion synthesis exhibited excellent electrical characteristics,including a field-effectmobility of 26.16 cm^(2)/Vs,a subthreshold swing of 0.125 V/dec,and an on/off current ratio of 1.13×10^(6) at a low operating voltage of 3 V.Furthermore,we demonstrated flexible ZrO_(2)/SnO_(2) TFTs with robust mechanical stability,capable of withstanding 5000 cycles of bending tests at a bending radius of 2.5 mm,achieved by scaling down the device dimensions.
