摘要
We have realized efficient photopatterning and high-quality ZrO_(2)films through combustion synthesis and manufactured resistive random access memory(RRAM)devices with excellent switching stability at low temperatures(250℃)using these approaches.Combustion synthesis reduces the energy required for oxide conversion,thus accelerating the decomposition of organic ligands in the UV-exposed area,and promoting the formation of metal-oxygen networks,contributing to patterning.Thermal analysis confirmed a reduction in the conversion temperature of combustion precursors,and the prepared combustion ZrO_(2)films exhibited a high proportion of metal-oxygen bonding that constitutes the oxide lattice,along with an amorphous phase.Furthermore,the synergistic effect of combustion synthesis and UV/O_(3)-assisted photochemical activation resulted in patterned ZrO_(2)films forming even more complete metal-oxygen networks.RRAM devices fabricated with patterned ZrO_(2)films using combustion synthesis exhibited excellent switching characteristics,including a narrow resistance distribution,endurance of 103 cycles,and retention for 105 s at 85℃,despite low-temperature annealing.Combustion synthesis not only enables the formation of high-quality metal oxide films with low external energy but also facilitates improved photopatterning.
基金
supported by the National Research Founda-tion of Korea(NRF)grants funded by the Ministry of Science and ICT(MSIT)(Nos.RS-2023-00251283,RS-2023-00257003,and 2022M3D1A2083618)
supported by the DGIST R&D Program of the MSIT(No.23-CoE-BT-03).
