Sub-10-nm bulk n-MOSFET （metal-oxide -semiconductor field effect transistor） direct source-to- drain tunneling current density using Wentzel- Krammers-Brillouin 0NKB） transmission tunneling theory has been simulate...Sub-10-nm bulk n-MOSFET （metal-oxide -semiconductor field effect transistor） direct source-to- drain tunneling current density using Wentzel- Krammers-Brillouin 0NKB） transmission tunneling theory has been simulated. The dependence of the source-to-drain tunneling current on channel length and barrier height is examined. Inversion layer quantization, band-gap narrowing, and drain induced barrier lowering effects have been included in the model. It has been observed that the leakage current density increases severely below 4 nm channel lengths, thus putting a limit to the scaling down of the MOSFETs. The results match closely with the numerical results already reported in literatures.展开更多
A simple analytical model has been developed to study quantum mechanical effects （QME） in a germanium substrate MOSFET （metal oxide semiconductor field effect transistor）, which includes gate oxide tunneling consi...A simple analytical model has been developed to study quantum mechanical effects （QME） in a germanium substrate MOSFET （metal oxide semiconductor field effect transistor）, which includes gate oxide tunneling considering the energy quantization effects in the substrate. Some alternate high dielectric constant materials to reduce the tunneling have also been studied. By comparing with the numerically reported results, the results match well with the existing reported work.展开更多
An analytical model has been developed to study inversion layer quantization in the ultra thin oxide MOS （metal oxide semiconductor） structures using variation and triangular well approaches.Accurate modeling of the...An analytical model has been developed to study inversion layer quantization in the ultra thin oxide MOS （metal oxide semiconductor） structures using variation and triangular well approaches.Accurate modeling of the inversion charge density using the continuous surface potential equations has been done.No approximation has been taken to model the inversion layer quantization process.The results show that the variation approach describes inversion layer quantization process accurately as it matches well with the BSIM 5 （Berkeley short channel insulated gate field effect transistor model 5） results more closely compared with triangular well approach.展开更多
This paper describes an analytical model for bulk electron mobility in strained-Si layers as a function of strain. Phonon scattering, columbic scattering and surface roughness scattering are included to analyze the fu...This paper describes an analytical model for bulk electron mobility in strained-Si layers as a function of strain. Phonon scattering, columbic scattering and surface roughness scattering are included to analyze the full mobility model. Analytical explicit calculations of all of the parameters to accurately estimate the electron mobility have been made. The results predict an increase in the electron mobility with the application of biaxial strain as also predicted from the basic theory of strain physics of metal oxide semiconductor （MOS） devices. The results have also been compared with numerically reported results and show good agreement.展开更多
A model has been developed to study the effect of depletion and energy quantization at the poly-silicon /oxide interface on the behavior of a nanometer scale n-MOSFET.A model of inversion charge density,including the ...A model has been developed to study the effect of depletion and energy quantization at the poly-silicon /oxide interface on the behavior of a nanometer scale n-MOSFET.A model of inversion charge density,including the inversion layer quantization using the variation approach in the substrate,has also been produced.Using the exact calculations of the polygate potential under the depletion and quantization conditions,a C-V model has been developed. All the results have been compared with the numerical models reported in existing literature and they show good agreement.展开更多
In this paper,a review of Cu/low-k,carbon nanotube（CNT）,graphene nanoribbon（GNR）and optical based interconnect technologies has been done,Interconnect models,challenges and solutions have also been discussed.Of al...In this paper,a review of Cu/low-k,carbon nanotube（CNT）,graphene nanoribbon（GNR）and optical based interconnect technologies has been done,Interconnect models,challenges and solutions have also been discussed.Of all the four technologies,CNT interconnects satisfy most of the challenges and they are most suited for nanometer scale technologies,despite some minor drawbacks.It is concluded that beyond 32nm technology,a paradigm shift in the interconnect material is required as Cu/low-k interconnects are approaching fundamental limits.展开更多
An attempt has been made to give a detailed review of strained silicon technology. Various device models have been studied that consider the effect of strain on the devices, and comparisons have been drawn. A review o...An attempt has been made to give a detailed review of strained silicon technology. Various device models have been studied that consider the effect of strain on the devices, and comparisons have been drawn. A review of some modeling issues in strained silicon technology has also been outlined. The review indicates that this technology is very much required in nanoscale MOSFETs due to its several potential benefits, and there is a strong need for an analytical model which describes the complete physics of the strain technology.展开更多
文摘Sub-10-nm bulk n-MOSFET （metal-oxide -semiconductor field effect transistor） direct source-to- drain tunneling current density using Wentzel- Krammers-Brillouin 0NKB） transmission tunneling theory has been simulated. The dependence of the source-to-drain tunneling current on channel length and barrier height is examined. Inversion layer quantization, band-gap narrowing, and drain induced barrier lowering effects have been included in the model. It has been observed that the leakage current density increases severely below 4 nm channel lengths, thus putting a limit to the scaling down of the MOSFETs. The results match closely with the numerical results already reported in literatures.
文摘A simple analytical model has been developed to study quantum mechanical effects （QME） in a germanium substrate MOSFET （metal oxide semiconductor field effect transistor）, which includes gate oxide tunneling considering the energy quantization effects in the substrate. Some alternate high dielectric constant materials to reduce the tunneling have also been studied. By comparing with the numerically reported results, the results match well with the existing reported work.
文摘An analytical model has been developed to study inversion layer quantization in the ultra thin oxide MOS （metal oxide semiconductor） structures using variation and triangular well approaches.Accurate modeling of the inversion charge density using the continuous surface potential equations has been done.No approximation has been taken to model the inversion layer quantization process.The results show that the variation approach describes inversion layer quantization process accurately as it matches well with the BSIM 5 （Berkeley short channel insulated gate field effect transistor model 5） results more closely compared with triangular well approach.
文摘This paper describes an analytical model for bulk electron mobility in strained-Si layers as a function of strain. Phonon scattering, columbic scattering and surface roughness scattering are included to analyze the full mobility model. Analytical explicit calculations of all of the parameters to accurately estimate the electron mobility have been made. The results predict an increase in the electron mobility with the application of biaxial strain as also predicted from the basic theory of strain physics of metal oxide semiconductor （MOS） devices. The results have also been compared with numerically reported results and show good agreement.
文摘A model has been developed to study the effect of depletion and energy quantization at the poly-silicon /oxide interface on the behavior of a nanometer scale n-MOSFET.A model of inversion charge density,including the inversion layer quantization using the variation approach in the substrate,has also been produced.Using the exact calculations of the polygate potential under the depletion and quantization conditions,a C-V model has been developed. All the results have been compared with the numerical models reported in existing literature and they show good agreement.
文摘In this paper,a review of Cu/low-k,carbon nanotube（CNT）,graphene nanoribbon（GNR）and optical based interconnect technologies has been done,Interconnect models,challenges and solutions have also been discussed.Of all the four technologies,CNT interconnects satisfy most of the challenges and they are most suited for nanometer scale technologies,despite some minor drawbacks.It is concluded that beyond 32nm technology,a paradigm shift in the interconnect material is required as Cu/low-k interconnects are approaching fundamental limits.
文摘An attempt has been made to give a detailed review of strained silicon technology. Various device models have been studied that consider the effect of strain on the devices, and comparisons have been drawn. A review of some modeling issues in strained silicon technology has also been outlined. The review indicates that this technology is very much required in nanoscale MOSFETs due to its several potential benefits, and there is a strong need for an analytical model which describes the complete physics of the strain technology.
