The refractive indices of disordered (Al xGa 1-x ) 0 51 In 0 49 P,which is grown by low-pressure organometallic vapor phase epitaxy and lattice-matched to GaAs substrate,have been determined by measurin...The refractive indices of disordered (Al xGa 1-x ) 0 51 In 0 49 P,which is grown by low-pressure organometallic vapor phase epitaxy and lattice-matched to GaAs substrate,have been determined by measuring their reflectance spectra when the wavelength ranges between 0 5 to 2 5 micrometer.A single-oscillator dispersion model is used to verify the experiment data and calculate the reflectance spectrum.The refractive indices are used to analyze the waveguide of strain quantum well GaInP/AlGaInP visible laser diode.The simulated far field pattern is consistent with the experimental results very well.展开更多
文摘The refractive indices of disordered (Al xGa 1-x ) 0 51 In 0 49 P,which is grown by low-pressure organometallic vapor phase epitaxy and lattice-matched to GaAs substrate,have been determined by measuring their reflectance spectra when the wavelength ranges between 0 5 to 2 5 micrometer.A single-oscillator dispersion model is used to verify the experiment data and calculate the reflectance spectrum.The refractive indices are used to analyze the waveguide of strain quantum well GaInP/AlGaInP visible laser diode.The simulated far field pattern is consistent with the experimental results very well.
