摘要
It is shown that the linear resistivity dependence on temperature for metals above the Debye’s temperature mainly is caused by electron-electron scattering of randomly moving electrons. The electron mean free path in metals at this temperature range is in inverse proportion to the effective density of randomly moving electrons, i.e. it is in inverse proportion both to the temperature, and to the density-of-states at the Fermi surface. The general relationships for estimation of the average diffusion coefficient, the average velocity, mean free length and average relaxation time of randomly moving electrons at the Fermi surface at temperatures above the Debye’s temperature are presented. The effective electron scattering cross-sections for different metals also are estimated. The calculation results of resistivity dependence on temperature in the range of temperature from 1 K to 900 K for Au, Cu, Mo, and Al also are presented and compared with the experimental data. Additionally in temperature range from 1 K to 900 K for copper, the temperature dependences of the mean free path, average diffusion coefficient, average drift mobility, average Hall mobility, average relaxation time of randomly moving electrons, and their resultant phonon mediated scattering cross-section are presented.
It is shown that the linear resistivity dependence on temperature for metals above the Debye’s temperature mainly is caused by electron-electron scattering of randomly moving electrons. The electron mean free path in metals at this temperature range is in inverse proportion to the effective density of randomly moving electrons, i.e. it is in inverse proportion both to the temperature, and to the density-of-states at the Fermi surface. The general relationships for estimation of the average diffusion coefficient, the average velocity, mean free length and average relaxation time of randomly moving electrons at the Fermi surface at temperatures above the Debye’s temperature are presented. The effective electron scattering cross-sections for different metals also are estimated. The calculation results of resistivity dependence on temperature in the range of temperature from 1 K to 900 K for Au, Cu, Mo, and Al also are presented and compared with the experimental data. Additionally in temperature range from 1 K to 900 K for copper, the temperature dependences of the mean free path, average diffusion coefficient, average drift mobility, average Hall mobility, average relaxation time of randomly moving electrons, and their resultant phonon mediated scattering cross-section are presented.
